Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: An EAS device, and methods for making the device for tuning the resonant frequency of the same is disclosed. The EAS device includes: an outer inductor having one end coupled to a linear or nonlinear capacitor plate; an inner inductor having one end coupled to the other type of capacitor; a first dielectric film on the outer and inner inductors and the capacitor plates coupled thereto, having openings exposing other ends of the outer and inner inductors; a second linear capacitor plate on the dielectric film; a second nonlinear capacitor plate on the dielectric film; a second dielectric film containing holes for the second linear and nonlinear capacitor plates, and exposing the other ends of the first and second inductors; and first and second conducting straps on the second dielectric film, configured to electrically connect one of the exposed inductor ends to a corresponding second capacitor plate.

Abstract: Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c-AmHpm?2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)?10 if q=0, q?3 if n=0, and (n+q)?6 if both n and q?0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14?a, the formula AkHgR1?h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane.

Abstract: Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c-AmHpm?2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)?10 if q=0, q?3 if n=0, and (n+q)?6 if both n and q?0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14?a, the formula AkHgR1?h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane.

Abstract: Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film.

Abstract: A RF MOS- or nonlinear device-based surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes (a) an inductor, (b) a first capacitor plate coupled to the inductor, (c) a dielectric film on the first capacitor plate, (d) a semiconductor component on the dielectric film, and (e) a conductor that provides electrical communication between the semiconductor component and the inductor. The method of manufacture generally includes (1) depositing a semiconductor material (or precursor) on a dielectric film; (2) forming a semiconductor component from the semiconductor material/precursor; (3) forming a conductive structure at least partly on the semiconductor component; and (4) etching the electrically functional substrate to form (i) an inductor and/or (ii) a second capacitor plate.

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

Abstract: Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices.

Abstract: Materials, compounds and compositions for radiation patternable functional thin films, methods of synthesizing such materials and compounds, and methods for forming an electronically functional thin film and structures including such a film. The compounds and compositions generally include (a) nanoparticles of an electronically functional material or substance and (b) ligands containing a (photo)reactive group. The method generally includes the steps of (1) irradiating the compound and/or composition, and (2) curing the irradiated compound and/or composition, generally to form an electronically functional film. The functional thin film includes a sintered mixture of nanoparticles. The thin film exhibits improved morphology and/or resolution relative to an otherwise identical structure made by an identical process, but without the (photo)functional group on the ligand, and/or relative to an otherwise identical material patterned by a conventional graphics art-based printing process.

Abstract: An electronic article surveillance (EAS) tag/device with coplanar and/or multiple coil circuits, a tag/device with two or more memory bits, and methods for making and tuning the resonant frequency of an EAS tag/device. The device generally includes: an outer inductor having one end coupled to a capacitor plate; an inner inductor having one end coupled to an other capacitor plate; a first dielectric film on the outer and inner inductors and the capacitor plates coupled thereto, having openings therein exposing other ends of the outer and inner inductors; a linear capacitor plate and a nonlinear capacitor plate on the first dielectric film; a second dielectric film containing holes therein for the second linear and nonlinear capacitor plates, and exposing the other ends of the first and second inductors; and first and second conducting straps on the second dielectric film, electrically connecting one of the exposed inductor ends to a corresponding second capacitor plate.

Abstract: Methods for repairing an electrical circuit; compositions, inks and equipment for making such repairs; and repair structures formed by the methods. The method generally includes the steps of: (a) depositing a composition comprising nanoparticles of an electrically functional material such that it contacts first and second elements of the circuit; and (b) sufficiently irradiating at least part of the composition with light to fuse or bind the nanoparticles to each other. The composition and ink generally comprise such nanoparticles and a sensitizer having a light absorption maximum at a wavelength different from that of the nanoparticles. The apparatus comprises: (1) a deposition apparatus configured to deposit a liquid film of an electrically functional material on the circuit; (2) a light source configured to irradiate at least part of the thin film; and (3) a table configured to secure the substrate.

Abstract: A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.

Abstract: A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.

Abstract: A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.

Abstract: A method of and device for controlled printing using liquid embossing techniques is disclosed. In accordance with the embodiments of the invention a stamp comprises a differentiated embossing surface with protruding and recessed surfaces to enhance the ability of the stamp to selectively displace liquid ink from a print surface and/or remove solvent from the liquid in a soft curing process. A stamp with differentiated surfaces is fabricated by selectively coating, or otherwise treating the protruding features, the recessed features, or a combination thereof, such that the surface energies and/or wettability of the protruding surfaces and the recessed surfaces are differentiated.

Abstract: The current invention is directed to a method of patterning a surface or layer in the fabrication of a micro-device. In accordance with a preferred embodiment of the invention, a first mask structure is formed by depositing a layer of a first material onto the surface or layer and embossing the layer with a micro-stamp structure. The layer is preferably embossed as a liquid, which is solidified or cured to form the first mask structure. The first mask structure can be used as an etch-stop mask which is removed in a subsequent processing step or, alternatively, the first mask structure can remain a functional layer of the micro-device. In further embodiments, unmasked regions of the surface or layer are chemically treated through the first mask structure and/or a second material is deposited onto the unmasked regions of the surface or layer through the first mask structure to form a second mask structure and/or a second functional layer of the micro-device.

Abstract: The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

Abstract: Methods for making metal-based nanoparticles and inks are disclosed. In accordance with the method of the present invention, molecular metal precursors are reduced in the presence of a reaction medium to form the nanoparticles. The molecular metal precursors are preferably reduced by heating the metal precursor in the medium, by adding a reducing agent, such an aldehyde or a combination thereof. Metal precursor are preferably metal oxides, transition metal complexes or combination thereof. The method of the present invention is used to make high yield nanoparticles with a range of particle size distributions. Nanoparticle formed by the present invention include mixtures of nanoparticle, alloy nanoparticles, metal core shell nanoparticles or nanoparticle comprising a single metal species.