Abstract: A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.

Abstract: A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.

Abstract: A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.

Abstract: A base structure for use with a flat panel field emission display device. A spacer layer is provided in the base assembly to generally planarize the base assembly prior to mechanical planarization. As a result, the base assembly is more reliable and permits improved manufacturing yields. In addition to improving planarity of the base assembly, the spacer layer may increase electrical isolation between the base electrodes and the grid electrodes of the field emission display.

Abstract: In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.

Abstract: A low temperature method of sharpening the emission tip of a field emission display includes the step of oxidizing the silicon substrate and the emission tip in an atmosphere of oxygen and ozone at temperatures below 800.degree. C. The oxidation step forms an oxide layer on the emission tip without significant flow of oxide or silicon during oxidation. The oxide layer is subsequently etched to expose the emission tip.

Abstract: Grooves are cut into an under pad of a polishing pad assembly formed by an under pad and an over pad. The grooves cause channeling of the over pad so that slurry received on the polishing face of the pad assembly is delivered across the pad assembly's surface in a controlled fashion.

Abstract: A transmission line tap for a field emission display includes a driving circuit formed from a charging and clearing circuit and a storage circuit. In one embodiment, the charging and clearing circuit is a single transistor coupled between a supply voltage and the storage circuit. The storage circuit is a single storage capacitor coupled between the transistor and the reference potential. In another embodiment, the charging and clearing circuit is formed from three transistors and an intermediate capacitor, and the storage circuit is formed from a storage capacitor and an output buffer. In either embodiment, pulses of an input voltage selectively charge the storage capacitor to a fixed voltage. The driving circuit then drives a column line of an emitter substrate in response to the storage capacitor. In the first embodiment, the storage capacitor is cleared by pulsing the supply voltage.

Abstract: A current controlled field emission display includes a pair of pulsed transistors that charge and discharge capacitance within the field emission display. The capacitance may be a separate circuit element or may be the parasitic capacitance of the integrated transistors and related circuitry. Various circuit configurations are employed to control charge transfer to and from the capacitance. The control circuit is driven by a series of pulse pairs where the first pulse in each pair controls charging of the capacitance and the second pulse controls discharging of the capacitance through the emitter set.

Abstract: A field emission display includes a substrate (400) having a trench (402) formed therein, an emitter (418) formed in the trench (402), a dielectric layer (412) disposed on the substrate (400), and a grid material layer (406) disposed on the dielectric layer (412). The dielectric layer (412) is exposed by a planarization method. Consequently, the emitter (418) is necessarily aligned with the opening in the grid material layer (406). An electric field applied to the grid material layer (406) activates emitter (418) to emit electrons (416) to strike a faceplate (414).

Abstract: The present invention is directed to a conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of tin oxide. Alternatively, the present invention is directed to a transparent conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of from about 90% to about 99% tin oxide and from about 1% to about 10% antimony.

Abstract: The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

Abstract: CMOS devices and process for fabricating low voltage, high voltage, or both low voltage and high voltage CMOS devices are disclosed. According to the process, p-channel stops and source/drain regions of PMOS devices are implanted into a substrate in a single step. Further, gates for both NMOS and PMOS devices are doped with n-type dopant and NMOS gates are self-aligned.

Abstract: A process is provided for forming a conductive line between a conductor and a spacer formed on a substrate of a field emission display. In one embodiment, the process performs the steps of disposing a screen between the substrate and a distributing member, the screen having an opening which permits the extrusion a conductive material, and moving the distributing member relative to the screen to extrude the conductive material through the opening and form a conductive line connecting the conductor and the spacer, wherein the snap off distance is varied according as the distributing member moves along the substrate.

Abstract: An apparatus is provided for modulating a conductive element in an FED device from a first level to a second level in which the charge on the display is conserved. In one embodiment, the apparatus comprises an analog modulating circuit, a switching circuit, and a switch. The analog modulating circuit receives a feedback signal responsive to an actual row-column voltage difference and a target signal responsive to a desired row-column voltage difference and generates an output signal responsive to the feedback signal and the target signal. The switching circuit generates a switching signal responsive to the feedback signal, the target signal, and a bias signal. The switch connects a reference voltage to the output generated by the analog modulating circuit in response to the switching signal.

Abstract: A FED is provided comprising: an emitter located on a cathode; a pixel located on an anode positioned to receive electrons from the emitter; and a getter located on the anode. According to another aspect of the invention, a method of making an FED is provided comprising: depositing getter material over a tip on a cathode; assembling the cathode with an anode, wherein the getter is between the tip and the anode; and activating the getter, whereby the activation causes the getter to be deposited on the anode.

Abstract: According to the present invention, there is provided a method for forming an emitter grid in a substrate of a field emission display. In one embodiment of the invention, the method includes the step of forming an emitter in a trench in the substrate, the trench having a dimension which is substantially the same as a desired dimension of the emitter grid, disposing a dielectric layer on the substrate, and disposing a grid material layer on the dielectric layer. The field emission display is then planarized to expose a portion of the dielectric which contacts the emitter.

Abstract: Aligned gate structures for field emitter display devices are formed by overlaying a substrate, having at least one emitter tip thereon, successively with an insulating layer, a conductive layer, and a photoresist layer. The photoresist layer is then exposed to create fixed and unfixed regions. The unfixed regions are developed and etched to remove the conductive layer under the unfixed regions. The insulating layer is then etched to expose the emitter tips and the photoresist layer removed.

Abstract: A flat panel display, such as a Field Emission Display ("FED"), is disclosed having a current control circuit. Input into the display, initially, is an analog signal having an amplitude. In one embodiment, the current control circuit includes a converter for converting the analog input signal to a sawtooth signal having a height and width. Then, the level of the sawtooth signal is compared to a voltage level to establish a pulse width of an emitter current. The emitter current is thus controlled by a pulse width modulation approach. In another embodiment, the current control circuit traps a column voltage on a parasitic capacitance. The trapped voltage then controls the gate of a transistor to control current flow from the emitter set to ground.

Abstract: A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution comprises applying a solution of hydrofluoric acid to the emitter.