Patents Assigned to Nantero, Inc.
-
Patent number: 11972830Abstract: Devices and methods for accessing resistive change elements in a resistive change element array to determine resistive states of the resistive change elements are disclosed. According to some aspects of the present disclosure the devices and methods access resistive change elements in a resistive change element array through a variety of operations. According to some aspects of the present disclosure the devices and methods supply an amount of current tailored for a particular operation. According to some aspects of the present disclosure the devices and methods compensate for circuit conditions of a resistive change element array by adjusting an amount of current tailored for a particular operation to compensate for circuit conditions of the resistive change element array.Type: GrantFiled: July 14, 2022Date of Patent: April 30, 2024Assignee: Nantero, Inc.Inventor: Jia Luo
-
Patent number: 11923003Abstract: Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.Type: GrantFiled: January 25, 2022Date of Patent: March 5, 2024Assignee: Nantero, Inc.Inventors: Jia Luo, Lee E. Cleveland, Ton Yan Tony Chan
-
Publication number: 20240038299Abstract: The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.Type: ApplicationFiled: October 6, 2023Publication date: February 1, 2024Applicant: Nantero, Inc.Inventors: Jia Luo, Lee E. Cleveland, Ton Yan Tony Chan
-
Publication number: 20240029765Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Applicant: Nantero, Inc.Inventors: Takao Akaogi, Jia Luo, Nancy See Loiu Leong
-
Publication number: 20240013834Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell.Type: ApplicationFiled: September 20, 2023Publication date: January 11, 2024Applicant: Nantero, Inc.Inventor: Claude L. Bertin
-
Publication number: 20230371409Abstract: Two-terminal nanotube switching devices employing nanotube fabrics configured with breaks among the nanotube elements and methods of making such devices are disclosed. Breaks within the nanotube elements can be formed by applying a sufficiently high voltage or a sufficiently high electrical current through the nanotube fabric. These breaks within the individual nanotube elements realize switching sites within the fabric which provide uniform and controllable characteristics for the nanotube switching device.Type: ApplicationFiled: May 11, 2023Publication date: November 16, 2023Applicant: Nantero, Inc.Inventor: Thomas Rueckes
-
Patent number: 11817171Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.Type: GrantFiled: October 8, 2021Date of Patent: November 14, 2023Assignee: Nantero, Inc.Inventors: Takao Akaogi, Jia Luo, Nancy See Loiu Leong
-
Patent number: 11798623Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell.Type: GrantFiled: November 5, 2021Date of Patent: October 24, 2023Assignee: Nantero, Inc.Inventor: Claude L. Bertin
-
Publication number: 20230142173Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell.Type: ApplicationFiled: November 5, 2021Publication date: May 11, 2023Applicant: Nantero, Inc.Inventor: Claude L. Bertin
-
Publication number: 20230012865Abstract: A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.Type: ApplicationFiled: September 19, 2022Publication date: January 19, 2023Applicant: Nantero, Inc.Inventors: Harry Shengwen Luan, Thomas Rueckes
-
Publication number: 20220358970Abstract: Devices and methods for accessing resistive change elements in a resistive change element array to determine resistive states of the resistive change elements are disclosed. According to some aspects of the present disclosure the devices and methods access resistive change elements in a resistive change element array through a variety of operations. According to some aspects of the present disclosure the devices and methods supply an amount of current tailored for a particular operation. According to some aspects of the present disclosure the devices and methods compensate for circuit conditions of a resistive change element array by adjusting an amount of current tailored for a particular operation to compensate for circuit conditions of the resistive change element array.Type: ApplicationFiled: July 14, 2022Publication date: November 10, 2022Applicant: Nantero, Inc.Inventor: Jia Luo
-
Three-dimensional array architecture for resistive change element arrays and methods for making same
Patent number: 11462686Abstract: A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.Type: GrantFiled: June 22, 2020Date of Patent: October 4, 2022Assignee: Nantero, Inc.Inventors: Harry Shengwen Luan, Thomas Rueckes -
Patent number: 11393508Abstract: Devices and methods for accessing resistive change elements in a resistive change element array to determine resistive states of the resistive change elements are disclosed. According to some aspects of the present disclosure the devices and methods access resistive change elements in a resistive change element array through a variety of operations. According to some aspects of the present disclosure the devices and methods supply an amount of current tailored for a particular operation. According to some aspects of the present disclosure the devices and methods compensate for circuit conditions of a resistive change element array by adjusting an amount of current tailored for a particular operation to compensate for circuit conditions of the resistive change element array.Type: GrantFiled: May 10, 2019Date of Patent: July 19, 2022Assignee: Nantero, Inc.Inventor: Jia Luo
-
Patent number: 11387277Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: GrantFiled: June 29, 2020Date of Patent: July 12, 2022Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Rueckes, X. M. Henry Huang, C. Rinn Cleavelin
-
Publication number: 20220148652Abstract: The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.Type: ApplicationFiled: January 25, 2022Publication date: May 12, 2022Applicant: Nantero, Inc.Inventors: Jia Luo, Lee E. Cleveland, Ton Yan Tony Chan
-
Patent number: 11295810Abstract: Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.Type: GrantFiled: June 7, 2019Date of Patent: April 5, 2022Assignee: Nantero, Inc.Inventors: Jia Luo, Lee E. Cleveland, Ton Yan Tony Chan
-
Patent number: 11258023Abstract: A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.Type: GrantFiled: August 5, 2020Date of Patent: February 22, 2022Assignee: Nantero, Inc.Inventors: Mark Ramsbey, Thomas Rueckes, Tatsuya Yamaguchi, Syuji Nozawa, Nagisa Sato
-
Publication number: 20220028435Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.Type: ApplicationFiled: October 8, 2021Publication date: January 27, 2022Applicant: Nantero, Inc.Inventors: Takao Akaogi, Jia Luo, Nancy See Loiu Leong
-
THREE-DIMENSIONAL ARRAY ARCHITECTURE FOR RESISTIVE CHANGE ELEMENT ARRAYS AND METHODS FOR MAKING SAME
Publication number: 20210399219Abstract: A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.Type: ApplicationFiled: June 22, 2020Publication date: December 23, 2021Applicant: Nantero, Inc.Inventors: Harry Shengwen LUAN, Thomas RUECKES -
Patent number: 11177261Abstract: Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.Type: GrantFiled: January 27, 2020Date of Patent: November 16, 2021Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Rueckes, X. M. Henry Huang, Ramesh Sivarajan, Eliodor G. Ghenciu, Steven L. Konsek, Mitchell Meinhold