Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.

Abstract: The present disclosure generally relates to circuit architectures for programming and accessing resistive change elements. The circuit architectures can program and access resistive change elements using neutral voltage conditions. The present disclosure also relates to methods for programming and accessing resistive change elements using neutral voltage conditions. The present disclosure additionally relates to sense amplifiers configurable into initializing configurations for initializing the sense amplifiers and comparing configurations for comparing voltages received by the sense amplifiers. The sense amplifiers can be included in the circuit architectures of the present disclosure.

Abstract: The present disclosure provides methods for stabilizing a colloidal dispersion during transport for low defect tolerance applications. The methods involve eliminating fluid interfaces within a dispersion, storing the dispersion in an environment of inert gas, and degassing the dispersion. Several bottle closure devices are described which may be ideal for use with these methods, being able to seal a container filled with a dispersion, permit the removal of headspace and rapidly empty the contained dispersion. In one aspect, the device includes a vented cap and semi-permeable membrane, which allows the passage of gas into and out of the container, and a dispenser nozzle integrated with the device to allow a stored dispersion to be dispensed without removing the device from the container. In another aspect, the bottle closure device includes an attachment point for a removable downtube and dispenser nozzle.

Abstract: The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group IV oxide within the nanotube solution. The molecular additive can introduce silicon (Si) and/or germanium (Ge) in the liquid medium, such that nominal silicon and/or germanium concentrations of the nanotube solution ranges from about 5 ppm to about 60 ppm.

Abstract: Devices and methods for programming resistive change elements using an electrical stimulus are disclosed. According to some aspects of the present disclosure the devices and methods program at least one resistive change element within at least one resistive change element cell in a resistive change element array using an electrical stimulus having a voltage level greater than a steady state voltage level that can be supplied by a power supply.

Abstract: A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses.

Abstract: Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.

Abstract: A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.

Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Abstract: The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

Abstract: Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

Abstract: Resistive change element cells sharing a selection device and resistive change element arrays including a plurality of resistive change element cells and a plurality of selection devices arranged in a group of at least two resistive change element cells sharing one selection device configuration are disclosed. According to some aspects of the present disclosure a group of resistive change element cells can be arranged on one level above a selection device. According to some aspects of the present disclosure a group of resistive change element cells can be arranged on multiple levels above a selection device.

Abstract: A method for controlling density, porosity and/or gap size within a nanotube fabric layer is disclosed. In one aspect, this can be accomplished by controlling the degree of rafting in a nanotube fabric. In one aspect, the method includes adjusting the concentration of individual nanotube elements dispersed in a nanotube application solution. A high concentration of individual nanotube elements will tend to promote rafting in a nanotube fabric layer formed using such a nanotube application solution, whereas a lower concentration will tend to discourage rafting. In another aspect, the method includes adjusting the concentration of ionic particles dispersed in a nanotube application solution. A low concentration of ionic particles will tend to promote rafting in a nanotube fabric layer formed using such a nanotube application solution, whereas a higher concentration will tend to discourage rafting. In other aspects, both concentration parameters are adjusted.

Abstract: A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses.

Abstract: Methods for scaling dimensions of resistive change elements, resistive change element arrays of scalable resistive change elements, and sealed resistive change elements are disclosed. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements and the resistive change element arrays of scalable resistive change elements reduce the impact of overlapping materials on the switching characteristics of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include sealing surfaces of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include forming barriers to copper migration in a copper back end of the line.

Abstract: Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field effect transistors comprising a source, a drain, a channel region, and a gate, wherein the first channel region includes a fabric of semiconducting nanotubes of a given conductivity type. Such FETs can be arranged to provide inverter circuits in either two-dimension or three-dimensional (stacked) layouts. Design equations based upon consideration of the electrical characteristics of the nanotubes are described which permit optimization of circuit design layout based upon constants that are indicative of the current carrying capacity of the nanotube fabrics of different FETs.

Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Abstract: A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

Abstract: Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

Abstract: The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.