Abstract: This extracorporeal circulation cassette is provided with: a blood circuit (10) comprising a flexible tube and having a blood tube access portion set in a predetermined position in a device; a dialysate circuit (12) comprising a flexible tube and having a dialysate tube access portion set in a predetermined position in the device; a first panel (4) and a second panel (6) that are rigid and that integrate the blood circuit (10) and the dialysate circuit (12) while sandwiching the blood circuit (10) and the dialysate circuit (12) from both sides; and a window portion formed in a part of at least one of the first panel (4) and the second panel (6), disposed in a predetermined position in the device. The blood tube access portion and the dialysate tube access portion are positioned in the window portion.

Abstract: The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.

Abstract: A light-emitting device 1 includes a semiconductor light-emitting element 2 emitting ultraviolet light, a first substrate 5 on which the semiconductor light-emitting element 2 is mounted, a second substrate 6 which is arranged on a side of the first substrate 5 opposite to the semiconductor light-emitting element 2 and on which the first substrate 5 is mounted, and an optical member 7 adhered using a resin adhesive 8 to a surface 61 of the second substrate 6 on the first substrate 5 side.

Abstract: A blood purification device includes a device body and a cassette. The cassette includes: a casing that accommodates a removal water receptacle; and pump tube. The device body includes fingers, a driving unit, and a housing. The cassette can be attached to and removed from the housing of the device body so that the pump tubes are positioned between the plurality of fingers and the outer surfaces of the casing.

Abstract: A dialysis base unit that is provided separately from a dialysate supply device for delivering dialysate and performs hemodialysis using the dialysate delivered from the dialysate supply device. The dialysis base unit includes a dialysate supply device identifying unit capable of identifying the dialysate supply device connected to the dialysis base unit. A dialysis system includes the dialysate supply device for delivering dialysate and the dialysis base unit.

Abstract: The related-art medical treatment instrument had one or more of various problems such as aging degradation of a microwave radiation switch and coagulation unevenness. It has been confirmed that the configuration of the medical treatment instrument according to the present invention solves the one or more of the problems described above, and the present invention has been completed.

Abstract: A pressurizing device includes: a mounting base; an upper mold which pressurizes the target object mounted on the mounting base from above; a heating lower mold which is a lower mold heated in advance by a heater, and which heats the target object under pressure by sandwiching the mounting base with the upper mold; a cooling lower mold which is a lower mold cooled in advance by a cooler, and which cools the target object under pressure by sandwiching the mounting base with the upper mold; and a control device which switches the lower mold that contributes to the pressurization of the target object to the heating lower mold or the cooling lower mold in accordance with the status of progress of the pressurization process for the target object.

Abstract: The introduction pipe is extend from an inlet port to the inside of the chamber body, and has, as an end opening thereof, a discharge port provided in the inner circumferential surface of the chamber body so as to be directed toward the circumferential direction. The inner circumferential surface of the chamber body is provided so as to spirally extend, along the circumferential direction, from a discharge point at which the discharge port is disposed, to a connection point at which the outer circumferential surface of the introduction pipe is connected to the inner circumferential surface of the chamber body. The inner circumferential surface is formed such that a second radius connecting the connection point to the center axis of the chamber body is shorter than a first radius connecting the discharge point to the center axis of the chamber body.

Abstract: A tube connector is configured to connect between a main tube and a peristaltically-actuated tube. The tube connector includes a first connection part configured to be connected to the main tube; a second connection part configured to be connected to the peristaltically-actuated tube; a communication part being provided between the first connection part and the second connection part and having a communication flow path for communicating between a first flow path through which fluid flows in the first connection part and a second flow path through which the fluid flows in the second connection part; and a main body section. The first flow path and the second flow path are formed to have a constant diameter and are formed so as to extend along the axial direction of the main body section. A diameter of the first flow path is smaller than a diameter of the second flow path. The communication flow path is formed so as to gradually enlarge in diameter from a first flow path side to a second flow path side.

Abstract: A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.

Abstract: A blood purification device includes: a control device that controls supply of a dialysis solution to a blood purifier; a dialysis solution supply tube in which a dialysis solution flows from the control device toward the blood purifier; a dialysis solution discharge tube in which the dialysis solution flows from the blood purifier toward the control device; a supply side coupler that connects between the dialysis solution supply tube and a dialysis solution inflow pipe of the blood purifier; and a discharge side coupler that connects between the dialysis solution discharge tube and a dialysis solution outflow pipe of the blood purifier. At least one of the supply side coupler and the discharge side coupler includes a light source unit configured to irradiate the interior of the coupler with ultraviolet light.

Abstract: Provided is a blood purification apparatus configured to keep a blood pump from being driven until a puncture needle is removed. The blood purification apparatus includes a blood circuit which is coupled with a puncture needle punctured into a patient and through which blood from the patient flows; a blood pump that is provided to the blood circuit and delivers liquid in the blood circuit by being driven; a needle removal detector that detects removal of the puncture needle from the patient; and a controller that starts a blood return process to return the blood in the blood circuit to the patient and puts the blood pump in a non-active state in response to determination that the blood return process ends.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet light, a package substrate mounting the semiconductor light-emitting element, a sealing resin that seals the semiconductor light-emitting element, and a coat film further provided between a light output surface of the semiconductor light-emitting element and the sealing resin. The refractive index of the coat film and the refractive index of the sealing resin are smaller than the refractive index of a member constituting the light output surface of the semiconductor light-emitting element, and the refractive index difference between the coat film and the sealing resin is not more than 0.15.

Abstract: An air trap chamber is provided with a chamber body and a filter. An introduction pipe of the chamber body is provided so as to extend to the inside of the chamber body, and an inlet port which is an end opening of the introduction pipe is provided, on the inner circumferential surface of the chamber body, so as to be directed toward the circumferential direction. The filter is provided inside the chamber body, and covers an outlet port of the chamber body. Openings are formed, at multiple stages along the center axis direction, in the cylindrical portion of the filter. An opening at an upper stage on the ceiling portion side of the filter has a circumferential width greater than that of an opening at a lower stage on the outlet port side.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. Pits are formed in the active layer and the electron blocking layer. A density of the pits on an upper surface of the electron blocking layer is not less than 7.0×107 pits/cm2 and not more than 1.8×109 pits/cm2.

Abstract: A nitride semiconductor light-emitting element emits ultraviolet light at a central wavelength of more than 320 nm and not more than 365 nm. The nitride semiconductor light-emitting element includes a substrate having a c-plane as a growth surface and a nitride semiconductor layer stacked on the growth surface of the substrate. The nitride semiconductor layer includes an n-type semiconductor layer, and an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer. The n-type semiconductor layer has an Al composition ratio of not more than 50% and a film thickness of more than 2 ?m. A composition difference obtained by subtracting an Al composition ratio of the well layer from the Al composition ratio of the n-type semiconductor layer is not less than 22%.

Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.

Abstract: A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.