Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.

Abstract: The semiconductor light-emitting element has an n-type semiconductor layer; an active layer provided on a first upper surface of the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode provided in contact with the upper surface of the p-type semiconductor layer; a p-side current diffusion layer provided on the p-side contact electrode in a region narrower than a formation region of the p-side contact electrode; a p-side pad electrode provided on the p-side current diffusion layer; an n-side contact electrode provided in contact with a second upper surface of the n-type semiconductor layer; an n-side current diffusion layer provided on the n-side contact electrode over a region wider than a formation region of the n-side contact electrode, and including a TiN layer; and an n-side pad electrode provided on the n-side current diffusion layer.

Abstract: This canned motor (10) is provided with a rotor (14); a cylindrical rotor can (42) that houses the rotor (14); an end plate (40) that covers an opening of the rotor can (42) in the axial direction and is joined to the rotor can (42); a rotating shaft (16) that passes through the rotor (14) and the end plate (40); and an annular wall (46) that surrounds the outer circumference of the rotating shaft (16), is joined to or integrated with the end plate (40), and is joined to the entire circumference of the rotating shaft (16) at an end thereof in the axial direction. The thickness of the end plate (40) is larger than the thickness of the annular wall (46).

Abstract: A susceptor includes a pocket in which a wafer is placed. A side surface of the pocket comprises a side-surface circumference portion formed in a circumference shape and a side-surface enlarged portion formed to extend toward an outer circumferential side of the pocket beyond the side-surface circumference portion. In a plan view seen from an open side of the pocket, when a straight line passing through a rotational center of the susceptor and a circumferential center of the side-surface circumference portion is defined as a first straight line and a straight line orthogonal to the first straight line and passing through the circumferential center is defined as a second straight line, the side-surface enlarged portion overlaps the second straight line.

Abstract: A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio Fp/FIII is a p/III ratio and a flow rate ratio FV/FIII is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element having a supporting substrate and a sealing member located above the supporting substrate, a mounting substrate on which the semiconductor light-emitting element is mounted in such a manner that the sealing member faces the mounting substrate, and a sealing part that integrally covers a part of the supporting substrate and a side surface of the sealing member and seals the semiconductor light-emitting element and the mounting substrate.

Abstract: A semiconductor package substrate includes a semiconductor housing space including a mounting surface being provided on a bottom side and configured to mount a semiconductor light-emitting element, and a reflective wall being provided around the mounting surface and configured to reflect light emitted from the semiconductor light-emitting element to be mounted on the mounting surface; a mounting region being provided at a rim portion and configured to mount a lid member for covering the semiconductor light-emitting element; and a flow-suppressing portion separating the mounting region and the reflective wall spatially in such a manner that a joining member joining the lid member to the rim portion is suppressed from flowing from the mounting region into the semiconductor housing space.

Abstract: The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al2O3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. At least one of the p-type semiconductor layer and the electron blocking layer includes an oxygen-containing portion including oxygen. An oxygen concentration at each position of the oxygen-containing portion in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not less than 2.5×1016 atoms/cm3.

Abstract: A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. A film thickness of the electron blocking layer is not more than 100 nm. An average value of a hydrogen concentration over the electron blocking layer in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not more than 2.0×1018 atoms/cm3. A boundary portion between the p-type semiconductor layer and the electron blocking layer includes an n-type impurity.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

Abstract: A semiconductor light-emitting element includes: an n-type contact layer; an n-side inserted layer provided on a first upper surface of the n-type contact layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; an n-type clad layer provided on the n-side inserted layer; an active layer provided on the n-type clad layer and including a well layer and a barrier layer made of an AlGaN-based semiconductor material; a p-type clad layer provided on the active layer; a p-side inserted layer provided on the p-type clad layer, made of an AlGaN-based semiconductor material, and having a thickness equal to or smaller than 5 nm; and a p-type contact layer provided on the p-side inserted layer. An AlN composition of each of the n-side and p-side inserted layers is higher than an AlN composition of the barrier layer.

Abstract: An adapter set that is attached to artery-side and vein-side shunt connectors-that are provided on a blood circuit. The adapter set includes: an artery-side adapter that has one end thereof connected to the artery-side shunt connector, has the other end thereof connected to a drainage port that is provided on the outside of the blood circuit, and thereby connects the artery-side shunt connector and the drainage port fluid tight; and a vein-side adapter that has one end thereof connected to the vein-side shunt connector, has the other end thereof connected to a supply port that is provided on the outside of the blood circuit, and thereby connects the vein-side shunt connector and the supply port fluid tight. The structure of the other end of the artery-side adapter and the structure of the other end of the vein-side adapter are different.

Abstract: A method for regenerating an adsorber which has a porous body and does not have an enzyme includes a dialysis step, in which the adsorber is connected to a dialysate circulation unit to cause uremic substances within a dialysate to be adsorbed onto the adsorber, and a regenerating step, in which the uremic substances which are adsorbed on the adsorber are desorbed by regenerating water that flows in a regenerating water flow unit. A dialysis system is equipped with the dialysate circulation unit, the adsorber, which is connected to the dialysate circulation unit, and the regenerating water flow unit. The regenerating water flow unit is connectable to the adsorber.

Abstract: A method of manufacturing a semiconductor light emitting element includes: forming an active layer made of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer made of an n-type AlGaN-based semiconductor material; removing a portion of each of the active layer and the n-type clad layer by dry etching to expose a portion of the n-type clad layer; forming a first metal layer including titanium (Ti) on an exposed surface of the n-type clad layer; forming a second metal layer including aluminum (Al) on the first metal layer; and forming an n-side electrode by annealing the first metal layer and the second metal layer at a temperature not lower than 560° C. and not higher than 650° C. A film density of the second metal layer before the annealing is lower than 2.7 g/cm3.

Abstract: A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.