Patents Assigned to Nippon Micrometal Corporation
  • Patent number: 10461055
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: October 29, 2019
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
    Inventors: Takashi Yamada, Daizo Oda, Teruo Haibara, Tomohiro Uno
  • Publication number: 20190326246
    Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
    Type: Application
    Filed: February 14, 2018
    Publication date: October 24, 2019
    Applicants: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Tetsuya OYAMADA, Tomohiro UNO, Takashi YAMADA, Daizo ODA, Motoki ETO
  • Patent number: 10414002
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.
    Type: Grant
    Filed: May 19, 2016
    Date of Patent: September 17, 2019
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
    Inventors: Takashi Yamada, Daizo Oda, Teruo Haibara, Ryo Oishi, Kazuyuki Saito, Tomohiro Uno
  • Patent number: 10381320
    Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: August 13, 2019
    Assignees: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Tetsuya Oyamada, Tomohiro Uno, Hiroyuki Deai, Daizo Oda
  • Publication number: 20190164927
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
    Type: Application
    Filed: January 15, 2019
    Publication date: May 30, 2019
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Takashi YAMADA, Daizo ODA, Teruo HAIBARA, Tomohiro UNO
  • Patent number: 10236272
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: March 19, 2019
    Assignees: Nippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.
    Inventors: Takashi Yamada, Daizo Oda, Teruo Haibara, Tomohiro Uno
  • Patent number: 10137534
    Abstract: A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 ?m or more and 1.3 ?m or less.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: November 27, 2018
    Assignees: Nippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.
    Inventors: Takashi Yamada, Daizo Oda, Teruo Haibara, Ryo Oishi, Kazuyuki Saito, Tomohiro Uno
  • Patent number: 10121758
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: November 6, 2018
    Assignees: Nippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.
    Inventors: Daizo Oda, Motoki Eto, Kazuyuki Saito, Teruo Haibara, Ryo Oishi, Takashi Yamada, Tomohiro Uno
  • Patent number: 10121764
    Abstract: The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: November 6, 2018
    Assignees: Nippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.
    Inventors: Noritoshi Araki, Takashi Yamada, Teruo Haibara, Ryo Oishi, Tomohiro Uno
  • Patent number: 10032741
    Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: July 24, 2018
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Daizo Oda, Motoki Eto, Takashi Yamada, Teruo Haibara, Ryo Oishi, Tomohiro Uno, Tetsuya Oyamada
  • Publication number: 20180096965
    Abstract: The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.
    Type: Application
    Filed: April 14, 2016
    Publication date: April 5, 2018
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Noritoshi ARAKI, Takashi YAMADA, Teruo HAIBARA, Ryo OISHI, Tomohiro UNO
  • Patent number: 9887172
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: February 6, 2018
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Daizo Oda, Motoki Eto, Kazuyuki Saito, Teruo Haibara, Ryo Oishi, Takashi Yamada, Tomohiro Uno
  • Patent number: 9812421
    Abstract: Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: November 7, 2017
    Assignees: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Tomohiro Uno, Yoshiaki Hagiwara, Tetsuya Oyamada, Daizo Oda
  • Patent number: 9773748
    Abstract: A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: September 26, 2017
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Takashi Yamada, Daizo Oda, Ryo Oishi, Tomohiro Uno
  • Publication number: 20170216974
    Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.
    Type: Application
    Filed: May 19, 2016
    Publication date: August 3, 2017
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Takashi YAMADA, Daizo ODA, Teruo HAIBARA, Ryo OISHI, Kazuyuki SAITO, Tomohiro UNO
  • Patent number: 9543266
    Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 ?m2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: January 10, 2017
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD
    Inventors: Takashi Yamada, Daizo Oda, Ryo Oishi, Teruo Haibara, Tomohiro Uno
  • Patent number: 9536854
    Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 ?m2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: January 3, 2017
    Assignees: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD
    Inventors: Takashi Yamada, Daizo Oda, Ryo Oishi, Teruo Haibara, Tomohiro Uno
  • Patent number: 9434027
    Abstract: It is an object of the present invention to provide a bonding wire capable of maintaining a structure and a configuration thereof at the time of performing wire bonding; and a manufacturing method thereof. Provided is a bonding wire having a core member mainly composed of copper; and a palladium coating layer. Particularly, formed in a center of the core member is a fibrous structure with copper crystals extending in an axial direction.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: September 6, 2016
    Assignee: NIPPON MICROMETAL CORPORATION
    Inventor: Ryo Togashi
  • Patent number: 9427830
    Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: August 30, 2016
    Assignees: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Tomohiro Uno, Shinichi Terashima, Takashi Yamada, Daizo Oda
  • Patent number: 9320152
    Abstract: A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)6Sn5 is formed in the Sn—Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.
    Type: Grant
    Filed: May 12, 2014
    Date of Patent: April 19, 2016
    Assignees: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Shinichi Terashima, Takayuki Kobayashi, Masamoto Tanaka, Katsuichi Kimura, Tadayuki Sagawa