Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: A high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b?0.7.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof.

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which has good wire-surface nature, loop linearity, stability of loop heights, and stability of a wire bonding shape, and which can cope with semiconductor packaging technologies, such as thinning, achievement of a fine pitch, achievement of a long span, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract: A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.

Abstract: There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.