Patents Assigned to Nippon Micrometal Corporation
  • Patent number: 9112059
    Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: August 18, 2015
    Assignees: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi
  • Patent number: 9059003
    Abstract: It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 ?m and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 ? or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: June 16, 2015
    Assignees: NIPPON MICROMETAL CORPORATION, WASEDA UNIVERSITY
    Inventors: Kohei Tatsumi, Takashi Yamada, Daizo Oda
  • Patent number: 9024442
    Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: May 5, 2015
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Shinichi Terashima, Masamoto Tanaka, Katsuichi Kimura
  • Publication number: 20140329106
    Abstract: It is an object of the present invention to provide a bonding wire capable of maintaining a structure and a configuration thereof at the time of performing wire bonding; and a manufacturing method thereof. Provided is a bonding wire having a core member mainly composed of copper; and a palladium coating layer. Particularly, formed in a center of the core member is a fibrous structure with copper crystals extending in an axial direction.
    Type: Application
    Filed: July 18, 2014
    Publication date: November 6, 2014
    Applicant: NIPPON MICROMETAL CORPORATION
    Inventor: Ryo TOGASHI
  • Patent number: 8815019
    Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: August 26, 2014
    Assignees: Nippon Steel & Sumikin Materials., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Shinichi Terashima, Takashi Yamada, Ryo Oishi, Daizo Oda
  • Patent number: 8742258
    Abstract: A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: June 3, 2014
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Shinichi Terashima, Tomohiro Uno, Takashi Yamada, Daizo Oda
  • Patent number: 8653668
    Abstract: A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: February 18, 2014
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Takashi Yamada, Atsuo Ikeda
  • Patent number: 8610291
    Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: December 17, 2013
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Keiichi Kimura, Takashi Yamada
  • Publication number: 20130306352
    Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
    Type: Application
    Filed: July 16, 2010
    Publication date: November 21, 2013
    Applicants: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Shinichi Terashima, Tomohiro Uno, Takashi Yamada, Daizo Oda
  • Patent number: 8562906
    Abstract: A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu3Sn intermetallic compound layer is formed directly on the Cu electrode, and then a Cu6Sn5 intermetallic compound layer is formed thereon. A Cu atomic site in the Cu6Sn5 intermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the Cu6Sn5 intermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: October 22, 2013
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Masamoto Tanaka, Tsutomu Sasaki, Takayuki Kobayashi, Kazuto Kawakami, Masayoshi Fujishima
  • Patent number: 8501088
    Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: August 6, 2013
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Takayuki Kobayashi, Tsutomu Sasaki, Masamoto Tanaka, Katsuichi Kimura
  • Publication number: 20130180757
    Abstract: A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion.
    Type: Application
    Filed: September 29, 2011
    Publication date: July 18, 2013
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
    Inventors: Tomohiro Uno, Takashi Yamada, Atsuo Ikeda
  • Patent number: 8415797
    Abstract: A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: April 9, 2013
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Keiichi Kimura, Tomohiro Uno, Takashi Yamada, Kagehito Nishibayashi
  • Patent number: 8299356
    Abstract: A semiconductor-device bonding wire includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <111> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <111> orientations have an angular difference relative to the wire lengthwise direction, the angular difference being within 15 degrees.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: October 30, 2012
    Assignees: Nippon Steel Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Keiichi Kimura, Takashi Yamada
  • Patent number: 8247911
    Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.
    Type: Grant
    Filed: January 15, 2008
    Date of Patent: August 21, 2012
    Assignees: Nippon Steel Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Shinichi Terashima, Keiichi Kimura, Takashi Yamada, Akihito Nishibayashi
  • Publication number: 20120118610
    Abstract: There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
    Type: Application
    Filed: July 16, 2010
    Publication date: May 17, 2012
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTD
    Inventors: Shinichi Terashima, Tomohiro Uno, Takashi Yamada, Daizo Oda
  • Publication number: 20120104613
    Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.
    Type: Application
    Filed: January 12, 2012
    Publication date: May 3, 2012
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTD.
    Inventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi
  • Publication number: 20120094121
    Abstract: The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 19, 2012
    Applicants: NIPPON MICROMETAL CORPORATION, NIPPON STEEL MATERIALS CO., LTD.
    Inventors: Tomohiro Uno, Shinichi Terashima, Takashi Yamada, Daizo Oda
  • Publication number: 20120038042
    Abstract: A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn.
    Type: Application
    Filed: April 12, 2010
    Publication date: February 16, 2012
    Applicants: Nippon Micrometal Corporation, Nippon Steel Materials Co., Ltd.
    Inventors: Tsutomu Sasaki, Shinichi Terashima, Masamoto Tanaka, Katsuichi Kimura
  • Patent number: 8102061
    Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: January 24, 2012
    Assignees: Nippon Steel Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Tomohiro Uno, Keiichi Kimura, Shinichi Terashima, Takashi Yamada, Akihito Nishibayashi