Abstract: An optical module includes a semiconductor laser with an active layer disproportionately positioned closer to the first surface. The semiconductor laser includes a reflector for reflecting the light outgoing from the active layer in a direction along the first surface toward another direction. The active layer and the reflector are monolithically integrated in the semiconductor laser. The optical module includes a carrier formed from a light transmissive material and having a third surface and a fourth surface opposite to each other. The semiconductor laser is mounted on the carrier so as for the light to enter the third surface. The carrier has a lens integrally on the fourth surface. The optical module includes a substrate having an optical waveguide and an optical coupler for guiding the light to the optical waveguide. The optical waveguide and the optical coupler are integrated in the substrate.

Abstract: To provide an optical module and a method for aligning the optical module with which alignment can be easily performed. An optical module includes first optical element sections and a second optical element section optically joined to the first optical element sections. Each first optical element section includes an optical conversion element, a ferrule having a distal end being in contact with and optically joined to the second optical element section, and a first optical system disposed in a position where the ferrule and the optical conversion element are optically adjusted. The second optical element section includes joining sections in contact with and joined to, in joining parts, the distal ends of the ferrules, a wavelength multiplexing optical element optically joined to the optical conversion elements, and second optical systems respectively disposed in positions where the wavelength multiplexing optical elements and the joining parts are optically adjusted.

Abstract: Provided is an optical semiconductor device which has long-term reliability since a threshold current is small, and a relaxation oscillation frequency is high. An optical semiconductor device includes an InP semiconductor substrate, a lower mesa structure that is disposed above the InP semiconductor substrate, and includes a multiple quantum well layer, an upper mesa structure that is disposed on the lower mesa structure, and includes a cladding layer, a buried semiconductor layer that buries both side surfaces of the lower mesa structure, and an insulating film that covers both side surfaces of the upper mesa structure by being in contact with both side surfaces of the upper mesa structure, in which the lower mesa structure includes a first semiconductor layer, above the multiple quantum well layer, and the upper mesa structure includes a second semiconductor layer which is different from the cladding layer in composition, below the cladding layer.

Abstract: An optical subassembly includes: a conductor plate having a pair of penetration holes, both penetrating the conductor plate from an outer surface to an inner surface; a pair of lead terminals fixed in the two respective penetration holes and passing through the pair of penetration holes; a wiring board with a pair of wiring patterns arranged on a surface; and a plurality of bonding wires electrically connecting the pair of lead terminals and the pair of wiring patterns. A cross section of the pair of lead terminals on the inner surface side is larger than a cross section on the outer surface side. End faces on the inner surface side are situated within a range from +180 ?m to ?100 ?m to the inner side from the inner surface of the conductor plate in a direction perpendicular to the inner surface.

Abstract: To provide an optical module whose power consumption in an ambient temperature range is reduced, and an optical transmission equipment. The optical module includes: a housing; a box type optical subassembly including a bottom portion serving as a heat dissipation face; and a heat conductive member disposed between the bottom portion of the optical subassembly and a bottom portion of the housing. The optical subassembly includes one or a plurality of optical semiconductor devices, and a temperature controller on which the one or plurality of optical semiconductor devices are mounted and which is placed on an inner bottom portion of the optical subassembly. The heat conductive member is disposed only at a portion of the bottom portion of the optical subassembly.

Abstract: Provided are an optical module and a transmission equipment in which a decrease in yield due to brazing or soldering is suppressed. Provided is an optical module including a semiconductor optical element, a stem, and a wiring substrate. The stem includes one or more lead terminals. The wiring substrate includes one or more openings through which the one or more lead terminals, respectively, pass. The stem has a placing surface on which the wiring substrate is placed, and two protrusion portions that are arranged on both external sides, respectively, of the wiring substrate. The wiring substrate further includes a ground conductor layer being positioned on a rear surface and two ground conductor patterns that are arranged on regions, respectively, that are in the vicinity of the two protrusion portions, of a front surface, and are electrically connected to the ground conductor layer.

Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.

Abstract: In an optical transmitter module for combining three or more optical signals different in intensity with an optical multiplexer to generate a PAM signal, the influence of the beat noise and the chromatic dispersion due to the difference in wavelength is reduced. The optical transmitter module includes first through third optical signal sources adapted to output respective optical signals binary intensity modulated with different amplitude from each other, and a combining section. The combining section has a wavelength multiplexer adapted to wavelength-multiplex a plurality of input optical signals having different wavelengths from each other while keeping the respective polarization states, and a polarization multiplexer adapted to polarization-multiplex a pair of input optical signals having respective polarization states perpendicular to each other, and the combining section combines the input optical signals from the first through third optical signal sources with each other to generate a PAM8 signal.

Abstract: The invention provides an optical module which is less likely to be damaged, and can be assembled at low cost. The optical module comprises a housing having an electrical signal port for inputting and/or outputting an electrical signal and an optical signal port for inputting and/or outputting an optical signal, a first substrate arranged in the housing so as to connect to the electrical signal port, an optical fiber arranged in the housing so as to connect to the optical signal port, and a second substrate provided with an optical device which connects to the optical fiber to input the optical signal from the optical fiber and output the optical signal to the optical fiber, and arranged in the housing so as to electrically connect to the first substrate, and to be inclined with respect to a base plane of the housing.

Abstract: In an optical module including an optical axis adjustment mechanism, the reliability of fixation of a movable portion is enhanced while an adhesive is prevented from flowing out to an unintended portion. An optical module includes an element portion, a manipulation lever, a bank, a support spring, and a reservoir portion. The bank includes a lever-opposing portion having a step face facing a longitudinal side face of the manipulation lever. The support spring is connected at both ends to the element portion and the bank. The reservoir portion is surrounded in a bay shape, in a plan view, by the manipulation lever, the element portion, the support spring, and the bank and stores the adhesive fixing the lever to the substrate. The reservoir portion includes, in the vicinity of a handle of the manipulation lever, an outflow blocking portion blocking the outflow of the adhesive before curing.

Abstract: An optical receiver module includes light-receiving elements each having a first electrode and a second electrode to which a bias is applied, and converting input optical signals into electric signals and outputting the electric signals from the first electrodes, and a carrier having wiring patterns respectively electrically connecting to the light-receiving elements and supporting the light-receiving elements. The wiring pattern includes a first wiring line electrically connecting to the first electrode and a second wiring line electrically connecting to the second electrode. The second wiring line has a high resistance portion having a higher resistance value than the other portions at least in a position overlapping with the light-receiving element to be connected and a low resistance portion having a lower resistance value than the high resistance portion at least in a position not overlapping with any of the light-receiving elements.

Abstract: Provided is an optical communication system capable of suppressing the deterioration of an intensity waveform of an optical intensity modulated signal subjected to transformation using SSB modulation and improving a bit error ratio and a receiver sensitivity of the optical intensity modulated signal. The optical communication system includes: an optical transmitter section including: a single-side band modulation circuit configured to subject a double-side band modulated signal to generate a single-side band modulated signal; a correction circuit configured to correct an intensity of the single-side band modulated signal so that the intensity of the single-side band modulated signal becomes closer to an intensity of the double-side band modulated signal; and an optical IQ modulator configured to output an optical modulated signal; and an optical receiver section configured to receive the optical modulated signal to directly detect an intensity component of the optical modulated signal.

Abstract: A submount which has a mounting surface on which three or more semiconductor lasers are arranged in a first direction, and includes a heat generator configured to increase the temperatures of the three or more semiconductor lasers, in which, where the heat generator generates heat, a first heat of the heat absorbed by a first semiconductor laser of the three or more semiconductor lasers disposed at one end along the first direction is larger than a second heat of the heat absorbed by a second semiconductor laser of the three or more semiconductor lasers disposed to be adjacent to the first semiconductor laser on the mounting surface.

Abstract: Provided are a semiconductor light receiving device, an optical receiver module, and a manufacturing method thereof in which characteristics of the device are improved when the device has a structure in which a mesa structure including layers formed of a common material is buried by a buried layer. The semiconductor light receiving device includes the mesa structure including the layers formed of a commonmaterial, the layers including an absorbing layer, the mesa structure being buried by the buried layer formed so as to surround side surfaces of the mesa structure. The mesa structure has a cross section having a forwardly tapered portion and a reversely tapered portion.

Abstract: There is provided an optical module including an optical subassembly including an optical element, a printed circuit board, and a connection substrate. The connection substrate includes a first connection portion connected to a first signal line conductor strip disposed on a first surface and a first ground conductor layer disposed on a second surface. The first connection portion includes a first signal line pad portion, a first ground pad portion, both disposed on the first surface, a second signal line pad portion disposed, and a second ground pad portion, both disposed on the second surface. In the connection substrate, a distance between the first signal line pad portion and the first ground pad portion in a first region is narrower than that in a second region farther from an inner end portion on the gap portion side than the first region in plan view.

Abstract: Provided is a back illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.

Abstract: Provided is an optical communication system capable of suppressing the deterioration of an intensity waveform of an optical intensity modulated signal subjected to transformation using SSB modulation and improving a bit error ratio and a receiver sensitivity of the optical intensity modulated signal. The optical communication system includes: an optical transmitter section including: a single-side band modulation circuit configured to subject a double-side band modulated signal to generate a single-side band modulated signal; a correction circuit configured to correct an intensity of the single-side band modulated signal so that the intensity of the single-side band modulated signal becomes closer to an intensity of the double-side band modulated signal; and an optical IQ modulator configured to output an optical modulated signal; and an optical receiver section configured to receive the optical modulated signal to directly detect an intensity component of the optical modulated signal.

Abstract: To provide an optical transmitter module with simplified control of a voltage to be applied to an optical modulator. An optical transmitter module includes a semiconductor laser for irradiating a laser beam; a demultiplexer for branching the laser beam to output branched light beams; optical modulators for modulating an optical amplitude of each of the branched light beams into a first optical amplitude or a second optical amplitude, depending on an input level at two levels; and a multiplexer for multiplexing output light beams from the optical modulators. The optical transmitter module may include optical waveguides for connecting the optical modulators and the multiplexer, and the optical waveguides may include a first optical waveguide for causing a first phase difference and a second optical waveguide for causing a second phase difference different from the first phase difference.

Abstract: A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

Abstract: An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.