Abstract: An optical receiver module includes a light receiving element that converts a received light signal into an electric signal, a bias pad supplied with a bias power. The bias pad is included in the light receiving element and/or a carrier on which the light receiving element is mounted. The optical receiver module also includes a thin film resistor arranged in contact with the bias pad so as to connect in parallel to the bias pad. An electric resistance of the thin film resistor is larger than an electric resistance of the bias pad. The optical receiver module further includes an amplifier that amplifies the electric signal.

Abstract: A differential transmission circuit includes a pair of transmission line conductors and a ground conductor layer, wherein the pair of transmission line conductors include a first straight line region where both the pair of transmission line conductors extend in parallel to each other in a first direction with a first width in a first layer, a first cross region where one of the pair of transmission line conductors is formed in the first layer, the other thereof is formed in a second layer, and the pair of transmission line conductors cross the each other in a three-dimensional manner, the first cross region being disposed on the front side of the first straight line region, and wherein each of the widths of the pair of transmission line conductors in the first cross region is smaller than the first width.

Abstract: An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.

Abstract: In pattern synchronization for correctly regenerating received data, which is performed in an optical receiver for receiving an optical signal that has been subjected to quadrature phase modulation, signal conduction is quickly established without using duplicate combinations of bit shifting and pattern changing. A control method that does not involve verifying the duplicate combinations generated in modulation formats and pattern synchronization search orders. Specifically, a signal check circuit (40) performs data verification of data multiplexed by a MUX circuit (38) for multiplexing two data strings, and a bit shift pattern change control circuit (41) controls a bit shift circuit (36) and a pattern changing circuit (37) based on a result of the data verification and detects a correct combination of correct regenerated data to establish the signal conduction. At this time, for the bit shift circuit (36) and the pattern changing circuit (37), the duplicate combinations are not verified.

Abstract: Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting.

Abstract: Provided is a semiconductor light receiving device including: a semiconductor substrate; a semiconductor layer laminated on the semiconductor substrate and including an upper surface portion; a reflecting film formed to cover the upper surface portion of the semiconductor layer and including a principal reflecting region and an upper surface; and an upper electrode formed to cover at least one portion of the upper surface of the reflecting film, and including a junction portion extending through the reflecting file to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to a region of the reflecting film located outside the junction portion, in which the semiconductor light receiving device detects light entering from another side of the semiconductor substrate.

Abstract: Provided is an optical receiver including a first delay interferometer, a second delay interferometer, and an input light splitting portion for inputting modulated light. The first delay interferometer includes a first light splitting portion for splitting the input light into first light and second light, a first reflecting portion and a second reflecting portion for causing the first light and the second light to return to the first light splitting portion. The second delay interferometer includes a second light splitting portion for splitting the input light into third light and fourth light, a third reflecting portion and a fourth reflecting portion for causing the third light and the fourth light to return to the second light splitting portion. A region between the first light splitting portion and the second reflecting portion intersects with a region between the second light splitting portion and the fourth reflecting portion.

Abstract: An optical module includes a light-receiving element configured to convert an incident optical signal to an electric signal. The light-receiving element includes a mesa part configured to laminate at least a first semiconductor layer, a light absorption semiconductor layer that absorbs an optical signal entering from a light reception surface, and a second semiconductor layer. The light-receiving element also includes an electrode part disposed on a top of the mesa part and a wiring part that covers a part of a side surface of the mesa part. The optical module includes a lens configured to condense an optical signal from an optical fiber onto the light reception surface. The wiring part is disposed at a position based on an intensity distribution of the optical signal on the light reception surface.

Abstract: An optical communication module includes a laser that emits laser light, and an electro-absorber that absorbs the laser light, which is emitted from the laser, according to a voltage modulated based on a modulating signal and a bias voltage. The optical communication module detects data that varies correlatively with the temperature of the electro-absorber, and sets the bias voltage, which is associated with the detected data, on the basis of relational data specifying at least the relationship between the bias voltage and the data.

Abstract: In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 ? to equal to or less than 0.9 ?, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.

Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.

Abstract: The I phase modulator modulates a phase based on the bias voltage in which a first modulation signal and a first pilot signal are inherent and the Q phase modulator modulates a phase based on the bias voltage in which a second pilot signal different from the first pilot signal and a second modulation signal are inherent. A time-average power synchronous detection unit detects an optical power at a timing at which the positivity and negativity of the voltages of both pilot signals become the same, and an optical power when the positivity and negativity of the voltages of both pilot signals are opposite. The bias voltage control unit controls the bias voltage so that the difference between both the optical powers becomes small based on the detection result of the time-average power synchronous detection unit.

Abstract: In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency.

Abstract: When designing a demodulator for a DPSK-modulated signal, it is required that optical phase modulation is performed fast and the demodulator has a long lifetime. To achieve this object, a delay line interferometer inside the demodulator performs adjustment of phase difference between two split lights caused to interfere, using a first optical phase modulation unit such as a Piezo actuator and a second optical phase modulation unit such as a heating element that operates slower in modulation speed than the first optical phase modulation unit and is slower in deterioration speed.

Abstract: In a free space optical system type demodulator of a phase shift keying signal, if a half beam splitter is used as a non-polarizing optical branching unit that is used when generating beams corresponding to I and Q channels or when multiplexing an interference light, control of a power branching ratio is difficult, and it is necessary to suppress phase shifts that are different depending on a polarization state of an input state, and thereby the demodulator becomes high cost. Moreover, since directions of branched lights are different, it is difficult to suppress a skew of the demodulator. In the present invention, the non-polarizing optical branching unit that is used when generating the beams corresponding to the I and Q channels and when multiplexing the interference light is realized using polarization rotating elements and polarization separating elements. Moreover, branched beams are substantially aligned.

Abstract: The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.

Abstract: The optical receiver includes: a photoelectric conversion circuit for receiving an optical signal and converting the received optical signal into an electrical signal; a comparator for outputting a first determination signal (S1) when a voltage corresponding to the optical signal does not reach a first threshold value (TH1) and for canceling an output of the S1 when the voltage corresponding to the optical signal exceeds a second threshold value larger than TH1 during the S1 is output; a timing extraction circuit for generating a clock signal based on a frequency and a phase of the electrical signal obtained by the converting and for outputting a second determination signal (S2) when the generated clock signal does not satisfy a predetermined condition; a unit for causing the comparator to output the S1 when the S2 is output; and detects loss of optical signal while one of the S1 and S2 is output.

Abstract: In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 ? to equal to or less than 0.9 ?, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.

Abstract: An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer portion. The first lower clad layer portion, the first core layer portion, and the first upper clad layer portion are disposed in this order from the substrate side. The optical device also includes a first etch stop layer configured to stop etching when the first optical waveguide is formed. The first etch stop layer being laminated over the substrate. The first optical waveguide is laminated on the first etch stop layer.

Abstract: Provided is an optical module, including: an optical system having an optical path in a space thereof; an electro-optical device optically connected to a first input/output port as one of an input port and an output port of the optical system; an optical waveguide having flexibility; and a housing including an optical interface. The optical waveguide includes: a first connection portion optically connected to the optical interface in the housing; and a second connection portion optically connected to a second input/output port as another one of the input port and the output port of the optical system. The optical waveguide is arranged so as to be bent in the housing. A first optical axis passing between the optical interface and the first connection portion is displaced from a second optical axis passing between the second input/output port and the second connection portion.