Abstract: Provided is a light emitting apparatus including a body unit, a control unit configured to control a light emitting diode (LED), a heat emitting unit configured to emit heat of the LED, and an assembly unit configured to mutually connect the control unit and the heat emitting unit to the body unit. According to the foregoing structure, the body unit, the control unit, and the heat emitting unit may be connected through a single assembly process, thereby improving assembly efficiency.

Abstract: A dimming controlling apparatus including: a lighting driving unit for driving a lighting appliance; a power supply unit for supplying power required to drive the lighting appliance; a storage unit for storing a plurality of dimming profiles including time zones for driving the lighting appliance and dimming levels in accordance to the time zones; and a controller for controlling the lighting driving unit and the power supply unit by using the dimming profiles. An operating time of the lighting appliance is divided into a plurality of time zones, and dimming profiles are generated to include an intensity of illumination for driving the lighting appliance in each of the plurality of time zones and each of the time zones.

Abstract: A light source control device according to the present invention includes an image capturing unit for capturing an image by using light emitted from a light source and reflected or scattered on a subject; a user interface for receiving information regarding optical characteristics of the light source; a control unit for generating a light source control signal for setting a lighting state of the light source by using the received information regarding optical characteristics; and a wireless communication module for transmitting the generated light source control signal to the light source.

Abstract: An omnidirectional semiconductor light emitting device lamp has a light distribution characteristic having a large range similar to that of a general incandescent lamp. The semiconductor light emitting device lamp includes a light emitting device for emitting light in all directions and reflection plates arranged at a front surface and a lateral surface of the light emitting device. The light emitted from the light emitting device is reflected from the reflection plate located at the front side and the reflection plate located at the lateral side and emitted to a rear side of the light emitting device. A reflection film is formed on all exposed portions of a surface of the substrate on which the light emitting device is mounted.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

Abstract: The invention relates to a light guide panel capable of distributing light beams incident from a light source to an entire surface thereof. The light guide panel has at least two through holes formed in a path of the incident light beams, apart in a predetermined interval from a light incident surface. The through holes are formed perpendicular to the path of the incident light beams, and lined along the light incident surface of the light guide panel. The light guide panel according to the present invention can improve uniformity of incident light without increasing the number or size of the light source, thereby distributing the incident light in a wider angle and decreasing a light mixing region. The light guide panel is produced in a simple manufacturing process, reducing the manufacturing costs.

Abstract: A light emitting diode (LED) inspection apparatus includes at least one LED including a phosphor applied on an emission surface, a first lighting unit to emit visible light to the LED, a second lighting unit to emit ultraviolet (UV) light to the LED, a photographing unit to generate at least one first image data by photographing the visible light reflected from the LED and to generate at least one second image data by photographing the UV light reflected from the LED, and a determination unit to determine a defect in appearance and emission characteristics of the LED using the at least one first image data and second image data.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

Abstract: A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The present invention provides a light emitting diode package which includes a lead frame with a cavity; a mold exposing the cavity and housing the lead frame; and an LED chip mounted on the cavity, wherein light passing an upper edge of the LED chip passes an upper edge of the cavity.

Abstract: Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.