Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract: The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

Abstract: Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the other region of the phosphor substrate excluding the region where the LED chip is mounted; an electrode connection portion for electrically connecting the LED chip and the circuit board; and a sealing member that covers the LED chip, the circuit board, and the phosphor substrate.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K?3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K?1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: There is provided a light emitting module including: a printed circuit board; a plurality of light emitting diode chips disposed at a distance from one another on a conductive pattern formed on a top of the printed circuit board; and a connector formed on a bottom of the printed circuit board and electrically connected to the plurality of light emitting diode chips. The light emitting diode chips and the connector are optimally arranged to ensure that the light emitting module is suitably utilized as a high-density linear light source including a great number of light emitting diode chips and emits light outward with minimum loss.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. Accordingly, a reduction in luminous efficiency of an LED caused by yellowing is prevented to thereby increase luminous efficiency and achieve a reduction in size.

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.

Abstract: Provided is a white LED including a reflector cup; an LED chip mounted on the bottom surface of the reflector cup; transparent resin surrounding the LED chip; a phosphor layer formed on the transparent resin; and a light transmitting layer that is inserted into the surface of the phosphor layer so as to form an embossing pattern on the surface, the light transmitting layer transmitting light, incident from the phosphor layer, in the upward direction.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: An apparatus and method for automatically mixing a phosphor are provided, which are capable of automatically supplying accurate quantities of a phosphor and silicon to a mixing container using a phosphor supply unit and a silicon supply unit.

Abstract: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit.

Abstract: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.

Abstract: An apparatus for measuring the optical properties of an LED package includes: a light detection unit detecting light output from a plurality of LED packages of an LED package array in order to measure the optical properties of each of the LED packages; a mounting unit fixing the LED package array thereon when the optical properties thereof are measured; and a voltage application unit applying a driving voltage to the individual LED packages in the LED package array when the optical properties of the LED packages are measured.

Abstract: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

Abstract: Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.

Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.