Abstract: There is provided a light emitting device package, including: a package body; a first lead frame coupled to the package body and including a first recess having an exposed side, the first recess having a chip mounting area formed to be downwardly recessed therein, wherein at least a part of a bottom surface of the chip mounting area is exposed to a bottom surface of the package body; a second lead frame coupled to the package body so as to have a predetermined distance from the first lead frame and including a second recess having an exposed side opposed to the exposed side of the first recess; and at least one light emitting device mounted on the chip mounting area of the first lead frame and electrically connected with the first and second lead frames.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract: There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n?1) number (here, n is a positive integer satisfying n?2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n?1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.

Abstract: A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved.

Abstract: Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light.

Abstract: Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

Abstract: Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.

Abstract: Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules.

Abstract: A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.

Abstract: Provided is a dispensing device including a cylinder; a static mixer that is mounted in the cylinder such that the outer circumferential surface thereof is closely attached to the entire inner wall surface of the cylinder; and a flow path block that has a flow path formed therein and is mounted on the upper portion of the cylinder, the flow path diverging into two or more flow paths. Fluids passing through the static mixer are continuously transferred while being repeatedly divided and mixed.

Abstract: There is provided a light emitting module and a method of manufacturing the same. The light emitting module includes a circuit board, and a plurality of light emitting devices disposed on the circuit board, wherein the plurality of light emitting devices include at least one light emitting device having a driving voltage less than an average driving voltage of the plurality of light emitting devices and at least one of light emitting devices adjacent thereto having a driving voltage greater than the average driving voltage. In the light emitting module, variations in driving voltages between light emitting modules that may be caused due to driving voltage dissipation in a light emitting device may be minimized.

Abstract: There is provided a light emitting module including: a circuit board; at least one light source part disposed on the circuit board; a wavelength conversion part coupled with the circuit board, the wavelength conversion part covering alight emitting surface of the light source part and converting a wavelength of light; and a coupling part coupling the wavelength conversion part to the circuit board.

Abstract: Provided is a method of manufacturing an LED package, the method including preparing a mold die which includes an upper surface and a lower surface having an outer circumferential surface and a concave surface surrounded by the outer circumferential surface, the mold die having an outlet extending from the upper surface to the lower surface; preparing a base having a light emitting section formed therein; forming an inlet formed in a predetermined region of the base excluding the region where the light emitting section is formed; positioning the mold die on the light emitting section; forming a mold member by injecting a molding compound into the inlet of the base; and removing the mold die.

Abstract: Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.

Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Abstract: Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×1020/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.

Abstract: A light emitting diode (LED) package including: an LED chip; a first lead frame having a heat transfer unit with a top where a groove for stably mounting the LED chip is formed; a second lead frame disposed separately from the first lead frame; a package body having a concave portion encapsulating a portion of the heat transfer unit and the second lead frame but exposing a portion of the top of the heat transfer unit and a portion of the lead frame, and a ring-shaped portion extended in a ring shape along an inner wall of the groove of the heat transfer unit and forming an aperture in a center thereof; and a phosphor layer formed on the aperture of the ring-shaped portion and applied to the LED chip, wherein the LED chip is disposed in the inside of the aperture of the ring-shape portion.

Abstract: The present invention relates to an apparatus for forming a nano pattern capable of fabricating the uniform nano pattern at a low cost including a laser for generating a beam; a beam splitter for splitting the beam from the laser into two beams with the same intensity; variable mirrors for reflecting the two beams split by the beam splitter to a substrate; beam expansion units for expanding diameters of the beams by being positioned on paths of the two beams traveling toward the substrate; and a beam blocking unit, installed on an upper part of the substrate, transmitting only a specific region expanded through the beam expansion unit and blocking regions a remaining region, and a method for forming the nano pattern using the same.