Abstract: An object of the present invention is to provide composite particles capable of suppressing oxidation over time of a Si—C composite material. Composite particles (B) of the present invention contains composite particles (A) containing carbon and silicon; and amorphous layers coating surfaces thereof, where the composite particles (B) have ISi/IG of 0.10 or more and 0.65 or less, and have R value (ID/IG) of 1.00 or more and 1.30 or less, when a peak due to silicon is present at 450 to 495 cm?1, an intensity of the peak is defined as ISi, an intensity of a G band (peak intensity in the vicinity of 1600 cm?1) is defined as IG, and an intensity of a D band (peak intensity in the vicinity of 1360 cm?1) is defined as ID in a Raman spectrum, and where the composite particles (B) have a full width at half maximum of a peak of a 111 plane of Si of 3.0 deg. or more using a Cu-K? ray in an XRD pattern.

Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.

Abstract: An aluminum alloy forging includes 0.30 mass % or more and 1.0 mass % or less of Cu; 0.63 mass % or more and 1.30 mass % or less of Mg; 0.45 mass % or more and 1.45 mass % or less of Si; the balance being Al and inevitable impurities, wherein the following relations are satisfied, [Mg content]×1.587??4.1×[Cu content]2+7.8×[Cu content]?1.9??(1) [Si content]×2.730??4.1×[Cu content]2+7.8×[Cu content]?1.9??(2) and the ratio of the integrated intensity Q1 of the X-ray diffraction peak of the CuAl2 phase to the integrated intensity Q2 of the X-ray diffraction peak of the (200) plane of the Al phase obtained by the X-ray diffraction method, Q1/Q2, is 2×10?1 or less.

Abstract: A method for producing a thiol compound including a light emission process in which light is emitted to a colored thiol compound or a composition containing the thiol compound. In the light emission process, it is preferable to emit light including light with a wavelength of 250 nm to 600 nm to the composition.

Abstract: A negative electrode material for a lithium-ion secondary battery containing a composite (C) that contains a porous carbon (A) and a Si-containing compound (B). The porous carbon (A) satisfies V1/V0>0.80 and V2/V0<0.10. When a total pore volume at the maximum value of a relative pressure P/P0 is defined as V0 and P0 is a saturated vapor pressure, a cumulative pore volume at a relative pressure P/P0=0.1 is defined as V1, and a cumulative pore volume at a relative pressure P/P0=10?7 is defined as V2 in a nitrogen adsorption test. Further, the porous carbon (A) has a BET specific surface area of 800 m2/g or more, and the Si-containing compound (B) is contained in pores of the porous carbon (A). Also disclosed is a negative electrode sheet including the negative electrode material and a lithium-ion secondary battery including the negative electrode sheet.

Abstract: It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: Provided is a transparent conducting film having a preferable optical property, a preferable electrical property, and further, a superior durability of folding. The transparent conducting film comprises a transparent substrate and a transparent conducting layer formed on at least one of main faces of the transparent substrate, wherein the transparent conducting layer contains a binder resin and a conducting fiber, a cut portion of the transparent conducting film has a straightness of 0.050 mm or less. Preferably, the transparent substrate is a resin film having an elongated resin film or cut out from an elongated film, and can be folded in with a folding axis in the direction perpendicular to the longitudinal direction of the elongated resin film.

Abstract: What is provided is a production method in which a vinyl acetate is reacted with a primary or secondary alcohol represented by Formula (1) and carbon monoxide to produce a first ester compound represented by Formula (2), and the first ester compound is reacted with an alcohol to produce a lactic acid ester represented by Formula (3) and an acetic acid ester represented by Formula (4).

Abstract: A dummy substrate is formed with a disk-shaped glass substrate having a center hole, and a magnetic recording film on an outer circumferential surface along a thickness direction of the glass substrate and an inner circumferential surface of the center hole, and a surface roughness (Ra) of one surface and the other surface of the glass substrate is in a range of 0.2 nm or more and 100 nm or less.

Abstract: A lithium ion conductive solid electrolyte or an all-solid-state battery. The lithium ion conductive solid electrolyte satisfies any of (I) to (III): (I) having a crystal structure based on LiTa2PO8 and a crystal structure based on at least one compound selected from LiTa3O8, Ta2O5, and TaPO5; (II) being represented by the stoichiometric formula of Lia1Tab1Bc1Pd1Oe1 where 0.5<a1<2.0, 1.0<b1?2.0, 0<c1<0.5, 0.5<d1<1.0, and 5.0<e1?8.0; (III) being represented by the stoichiometric formula of Lia2Tab2Mac2Bd2Pe2Of2 where 0.5<a2<2.0, 1.0<b2?2.0, 0<c2<0.5, 0<d2<0.5, 0.5<e2<1.0, and 5.0<f2?8.0, and Ma is one or more elements selected from the group consisting of Nb, Zr, Ga, Sn, Hf, Bi, W, Mo, Si, Al, and Ge.

Abstract: A precursor of an alumina sintered compact including aluminum, yttrium, and at least one metal selected from iron, zinc, cobalt, manganese, copper, niobium, antimony, tungsten, silver, and gallium. The aluminum content is 98.0% by mass or more as an oxide (Al2O3) in 100% by mass of the precursor of an alumina sintered compact; the yttrium content is 0.01 to 1.35 parts by mass as an oxide (Y2O3) based on 100 parts by mass of the content of the aluminum as an oxide; the total content of the metals selected from the foregoing group is 0.02 to 1.55 parts by mass as an oxide based on 100 parts by mass of the content of aluminum as an oxide; and the aluminum is contained as ?-alumina. Also disclosed is an alumina sintered compact, and a method for producing an alumina sintered compact and for producing abrasive grains.

Abstract: Provided are a transparent conducting film laminate to which a curl generated during a heating step and after the heating step can be controlled, and a method for processing the same. A transparent conducting film laminate comprises a transparent conducting film 20 and a carrier film 10 stacked thereon, wherein the transparent conducting film 20 comprises a transparent resin film 3, transparent conducting layer 4, and an overcoat layer 5 stacked in this order, the transparent resin film 3 having a thickness T1 of 5 to 25 ?m and being made of an amorphous cycloolefin-based resin, the carrier film 10 is releasably stacked on the other main face, the face opposite to the face having the transparent conducting layer 4, of the transparent resin film 3 with an adhesive agent layer 2 therebetween, and a protection film 1 has a thickness T2 which is 5 times or more of the thickness T1 of the transparent resin film 3 and is 150 ?m or less, and is made of polyester having an aromatic ring in its molecular backbone.

Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.) [Chem.

Abstract: A composition is provided including a compound (A) represented by Formula (1) and a compound (B) represented by Formula (2), wherein the compound (B) is contained in an amount of 0.00002 to 0.2 parts by mass with respect to 100 parts by mass of the compound (A): (R1—COO)n—R2—(NCO)m . . . (1) (in Formula (1), R1 is an ethylenically unsaturated group having 2 to 7 carbon atoms; R2 is an (m+n)-valent hydrocarbon group having 1 to 7 carbon atoms; and n and m are each an integer of 1 or 2) (in Formula (2), R is (—R2—(OCO—R1), and R1 and R2 are the same as those in Formula (1)).

Abstract: The fluorine-containing ether compound is represented by the following formula (1): R1—R2—CH2—R3—CH2—R4. In the formula (1), R1 is represented by the following formula (2), R2 is represented by the following formula (3), R3 is a perfluoropolyether chain, and R4 is an organic end group different from R1—R2— and contains two or three polar groups, wherein each polar group is bonded to a different carbon atom, and the carbon atoms to which the polar groups are bonded are bonded to one another via a linking group containing a carbon atom to which the polar group is not bonded. In the formula (2), r is 1 to 3. In the formula (3), w is 2 or 3.

Abstract: The present invention provides a method for efficiently obtaining a fertilizer containing polysaccharide hydrolysates and nutrients such as calcium, phosphoric acid, and nitrogen. The present invention is a method for manufacturing a fertilizer, characterized by comprising: a hydrolysis step for obtaining a mixture including polysaccharide hydrolysates through hydrolysis of polysaccharides using an acid catalyst; and a neutralizing step after the hydrolysis step for adding at least one basic compound selected from the group consisting of potassium salt, phosphate, ammonium salt, and ammonia.

Abstract: A gas-barrier resin (A) having an oxygen permeability coefficient of 1.0×10?14 (cm3·cm/cm2·s·Pa) or less; and a copolymer (B) containing monomer structural units represented by the formula (1), the formula (2), and the formula (3): where: R1 represents a hydrogen atom or a methyl group; R2 represents a hydrocarbon group having 1 to 20 carbon atoms that may be substituted with a halogen atom, a hydroxy group, an alkoxy group, or an amino group; 1, m, and n represent numerical values representing molar proportions of the respective monomer structural units, and n may represent 0; and p represents an integer of from 1 to 4, wherein a ratio of a mass of the copolymer (B) to a total mass of the gas-barrier resin (A) and the copolymer (B) is from 1 mass % to 40 mass %.

Abstract: In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.

Abstract: A method of manufacturing a forged product includes a heating step, a first and a second forging steps, wherein the forging temperature in the heating step is 450° C. or higher and 550° C. or lower, and surface temperatures of the upper molding part of the first upper die in the first forging step and the upper molding part of the second upper die in the second forging step are 150° C. or higher and 190° C. or lower, surface temperatures of the lower molding parts of the first and the second lower dies are 190° C. or higher and 230° C. or lower, and the surface temperatures of the lower molding parts of the first and the second lower dies are higher by 5° C. or more than the surface temperatures of the upper molding parts of the first and the second upper dies.

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.