Patents Assigned to SiGe Semiconductor Inc.
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Patent number: 10128807Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.Type: GrantFiled: February 3, 2017Date of Patent: November 13, 2018Assignee: SiGe Semiconductor, Inc.Inventors: Alan J. A. Trainor, Grant Darcy Poulin, Craig Joseph Christmas
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Patent number: 9918189Abstract: Low cost semiconductor manufacturing techniques have provided consumers with a wide range of electronic devices supporting communications according to multiple standards. These electronic devices will be deployed within many operational jurisdictions, particularly with roaming features, such as Japan, Europe, Asia-Pacific, South America and North America. However, operational compliance requirements can vary substantially with these different jurisdictions. Current electronic devices are designed, manufactured, calibrated and operated according to a specification providing compliance with broad range of operational jurisdictions despite the performance limitations this applies in many of the operational jurisdictions. Accordingly, there is provided a method of dynamically configuring the electronic device based upon a geographically based determination of the operational jurisdiction from global navigation systems data received by the electronic device.Type: GrantFiled: February 4, 2014Date of Patent: March 13, 2018Assignee: SiGe Semiconductor, Inc.Inventors: Alan Trainor, Grant Darcy Poulin
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Patent number: 9692360Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing and fixed matching conditions receives a power level and an indicator of amplifier operation. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. A controller generates a control signal based at least in part on the power level and the indicator to control at least one of the bias current and the matching conditions of matching circuits. The matching conditions and bias current for channels at an edge of a channel band are different from the bias current and matching conditions for channels nearer a center of the channel band.Type: GrantFiled: July 23, 2015Date of Patent: June 27, 2017Assignee: SiGe Semiconductor, Inc.Inventors: Alan Trainor, Grant Darcy Poulin, Craig Joseph Christmas
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Patent number: 9322856Abstract: A circuit and method are provided for detecting a power of a signal amplified in a power amplifier. A diode and a voltage bias source are used to shift a voltage of the signal taken at a base of an amplifying transistor of the power amplifier, to generate a positive signal. The positive signal is provided to a base input of an emitter follower exhibiting high input impedance to generate a power detector output which follows the positive signal.Type: GrantFiled: October 1, 2012Date of Patent: April 26, 2016Assignee: SIGE SEMICONDUCTOR, INC.Inventors: Gordon Glen Rabjohn, Johan Grundlingh, Adrian Peter Long
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Patent number: 9099962Abstract: A system and method improve amplifier efficiency of operation relative to that of a matching circuit with fixed matching conditions. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The matching conditions for a matching circuit of an amplifying transistor are adjusted based at least in part on the power level and the indication where the matching conditions are different for channels at an edge of a channel band than for channels nearer a center of the channel band.Type: GrantFiled: February 27, 2014Date of Patent: August 4, 2015Assignee: SiGe Semiconductor, Inc.Inventors: Alan J. A. Trainor, Grant Darcy Poulin, Craig Joseph Christmas
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Patent number: 9083289Abstract: A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.Type: GrantFiled: December 10, 2013Date of Patent: July 14, 2015Assignee: SiGe Semiconductor, Inc.Inventor: Gordon Glen Rabjohn
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Patent number: 8923169Abstract: A transceiver circuit is configured to operate in a first mode of operation and a second mode of operation such that a receive signal propagates from an antenna through a first filter to a low noise amplifier while simultaneously a transmit signal propagates from a power amplifier through a second filter to the antenna when operating in the first mode. The receive signal propagates from the antenna to the low noise amplifier without being filtered while alternating with the transmit signal propagating from the power amplifier to the antenna without being filtered when operating in the second mode.Type: GrantFiled: March 8, 2013Date of Patent: December 30, 2014Assignee: SiGe Semiconductor, Inc.Inventors: Grant Darcy Poulin, Peter Ledel Gammel
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Patent number: 8824983Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.Type: GrantFiled: June 28, 2012Date of Patent: September 2, 2014Assignee: SiGe Semiconductor, Inc.Inventors: Mark M. Doherty, Lui Lam, Chun-Wen Paul Huang, Anthony Francis Quaglietta
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Publication number: 20140176243Abstract: A system and method improve amplifier efficiency of operation relative to that of a matching circuit with fixed matching conditions. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The matching conditions for a matching circuit of an amplifying transistor are adjusted based at least in part on the power level and the indication where the matching conditions are different for channels at an edge of a channel band than for channels nearer a center of the channel band.Type: ApplicationFiled: February 27, 2014Publication date: June 26, 2014Applicant: SiGe Semiconductor, Inc.Inventors: Alan J. A. Trainor, Grant Darcy Poulin, Craig Joseph Christmas
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Patent number: 8749032Abstract: An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.Type: GrantFiled: December 1, 2009Date of Patent: June 10, 2014Assignee: SiGe Semiconductor, Inc.Inventors: Mark Doherty, Michael McPartlin, Chun-Wen Paul Huang
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Publication number: 20140155051Abstract: Low cost semiconductor manufacturing techniques have provided consumers with a wide range of electronic devices supporting communications according to multiple standards. These electronic devices will be deployed within many operational jurisdictions, particularly with roaming features, such as Japan, Europe, Asia-Pacific, South America and North America. However, operational compliance requirements can vary substantially with these different jurisdictions. Current electronic devices are designed, manufactured, calibrated and operated according to a specification providing compliance with broad range of operational jurisdictions despite the performance limitations this applies in many of the operational jurisdictions. Accordingly, there is provided a method of dynamically configuring the electronic device based upon a geographically based determination of the operational jurisdiction from global navigation systems data received by the electronic device.Type: ApplicationFiled: February 4, 2014Publication date: June 5, 2014Applicant: SiGe Semiconductor, Inc.Inventors: Alan Trainor, Grant Darcy Poulin
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Patent number: 8729949Abstract: A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided.Type: GrantFiled: May 15, 2013Date of Patent: May 20, 2014Assignee: SiGe Semiconductor, Inc.Inventors: John Jackson Nisbet, Michael Joseph McPartlin, Chun-Wen Paul Huang
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Patent number: 8723531Abstract: An integrated RF circuit has an RF input port and an RF output port coupled to an external circuit element having known impedance such as an antenna. An RF circuit element is disposed between the RF input port and the RF output port and has a first input port and a first output port. The RF circuit element affects a signal received at the first input port and provides the affected signal to the first output port. The integrated RF circuit also has a VSWR detector circuit that measures a ratio of a characteristic of RF signals at the first input port and the first output port and that provides an indication of the ratio at a VSWR output port. The measured ratio of the characteristic is affected by an impedance of the coupling thereby providing an indication relating to the coupling.Type: GrantFiled: March 1, 2010Date of Patent: May 13, 2014Assignee: SiGe Semiconductor, Inc.Inventor: Jose Harrison
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Patent number: 8706064Abstract: A system and method improve amplifier efficiency of operation relative to that of an amplifying transistor with a fixed bias current. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The amplifying transistor is biased with a bias current that is determined based at least in part on the power level and the indication where the bias current is different for channels at an edge of a channel band than for channels nearer a center of the channel band.Type: GrantFiled: February 27, 2013Date of Patent: April 22, 2014Assignee: SiGe Semiconductor, Inc.Inventors: Alan J. A. Trainor, Grant Darcy Poulin, Craig Joseph Christmas
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Publication number: 20140097904Abstract: A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.Type: ApplicationFiled: December 10, 2013Publication date: April 10, 2014Applicant: SIGE SEMICONDUCTOR, INC.Inventor: Gordon Glen Rabjohn
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Patent number: 8675680Abstract: Low cost semiconductor manufacturing techniques have provided consumers with a wide range of electronic devices supporting communications according to multiple standards. These electronic devices will be deployed within many operational jurisdictions, particularly with roaming features, such as Japan, Europe, Asia-Pacific, South America and North America. However, operational compliance requirements can vary substantially with these different jurisdictions. Current electronic devices are designed, manufactured, calibrated and operated according to a specification providing compliance with broad range of operational jurisdictions despite the performance limitations this applies in many of the operational jurisdictions. Accordingly, there is provided a method of dynamically configuring the electronic device based upon a geographically based determination of the operational jurisdiction from global navigation systems data received by the electronic device.Type: GrantFiled: May 28, 2008Date of Patent: March 18, 2014Assignee: SiGe Semiconductor, Inc.Inventors: Alan Trainor, Darcy Poulin
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Patent number: 8618860Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.Type: GrantFiled: December 10, 2012Date of Patent: December 31, 2013Assignee: SiGe Semiconductor Inc.Inventors: Lui Lam, Hanching Fuh
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Patent number: 8610504Abstract: A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.Type: GrantFiled: September 11, 2012Date of Patent: December 17, 2013Assignee: Sige Semiconductor, Inc.Inventor: Gordon Glen Rabjohn
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Publication number: 20130260698Abstract: A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided.Type: ApplicationFiled: May 15, 2013Publication date: October 3, 2013Applicant: SiGe Semiconductor, Inc.Inventors: John Jackson Nisbet, Michael Joseph McPartlin, Chun-Wen Paul Huang
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Publication number: 20130188529Abstract: A transceiver circuit is configured to operate in a first mode of operation and a second mode of operation such that a receive signal propagates from an antenna through a first filter to a low noise amplifier while simultaneously a transmit signal propagates from a power amplifier through a second filter to the antenna when operating in the first mode. The receive signal propagates from the antenna to the low noise amplifier without being filtered while alternating with the transmit signal propagating from the power amplifier to the antenna without being filtered when operating in the second mode.Type: ApplicationFiled: March 8, 2013Publication date: July 25, 2013Applicant: SIGE SEMICONDUCTOR, INC.Inventor: SiGe Semiconductor, Inc.