Abstract: An ESD protection circuit includes a first voltage limiter having a first input terminal electrically coupled to each first signal pad of an integrated circuit by a first diode mounted in reverse bias during the integrated circuit operation. The first voltage limiter is mounted to be conductive between each first signal pad and ground during a positive ESD on the first signal pad. A second voltage limiter is electrically coupled and mounted to be conductive in the same direction as the first voltage limiter, between an external power supply pad and ground. An internal node outputs an internal power supply voltage to the domain, and is passed through by a current in response to a positive ESD on the power supply pad which is lower than the current passing through the first voltage limiter. A blocking diode is electrically connected between the first input terminal and the power supply pad.

Abstract: The present disclosure relates to a driver circuit for an optical light emitter of a ranging device, the driver circuit comprising: an inductor having a first of its nodes coupled to a current driver; a first branch comprising a first switch coupled between the second node of the inductor and a first supply voltage rail; a second branch for conducting a current through the optical light emitter, the second branch being coupled between the second node of the inductor and the first supply voltage rail; and a current sensor configured to detect the current passing through the inductor and to provide a feedback signal to the current driver.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: A lens is positioned to be received by a lens holder. The lens includes a first electrical trace and the lens holder includes a second electrical trace. The first and second electrical traces form electrodes of a sense capacitor. A capacitance of the sense capacitor is sensed. From the sensed capacitance, a determination is made as to whether the lens is present and properly positioned in the lens holder.

Abstract: Various embodiments of the present disclosure disclose decoding techniques for mitigating data corruption due to duty cycle distortion, jitter, and other distortions to a digital signal. Decoding processes, apparatuses, and systems are provided that utilize a decoding framework for improving the accuracy of output bit streams generated from digital signals. An example process receives data indicative of a digital signal, generates a signal measurement for the digital signal that includes signal length descriptive between a two rising edges of a digital signal or two falling edges of the demodulated digital signal, and generates at least one portion of an output bit stream for the digital signal based at least in part on the signal measurement.

Abstract: An integrated circuit includes a first subsystem including a first clock generator configured to generate a first clock signal. The integrated circuit also includes a second subsystem including a second clock generator configured to generate a second clock signal. The first subsystem include a clock edge selector configured to determine a phase difference between the first clock signal and the second clock signal and to select, based on the phase difference, either a rising edge or a falling edge of the second clock signal to control output of data from the first subsystem to the second subsystem.

Abstract: A configurable voltage regulating circuit includes first through fourth switches. A flying capacitor is coupled between a common mode node and a pump node, and a sense resistance network is coupled between an output node and an input of an error amplifier and configured to provide a sensed output voltage. The error amplifier receives at another input a reference voltage and generates an error signal. A charging circuit supplies a charging current to the pump node, and controls the value of the charging current as a function of the error signal. A switch command signals generator generates respective first, second, third, and fourth switch signals to control the first switch, second switch, third switch, and fourth switch. The generator sets the configurable voltage regulating circuit as either a charge pump or a linear regulator based the input voltage being less than a first threshold or greater than a second threshold.

Abstract: The present disclosure is directed to devices and methods for performing screen state detection. The screen state detection may be used in conjunction with any device with a bendable display. The device and method utilizes an electrostatic charge variation sensor to detect whether the display is in an open state or a closed state.

Abstract: A secure element device that is configured to be cryptographically bound to a host device includes a secure element host key slot configured to store host key information that allows only the host device to control the secure element, a secure memory storing binding information, and limited functionality allowing the binding information to be read from the secure memory by the host device during a binding process. The binding information is cryptographically correlated with the host key information. The host key information is generated by the host device using the binding information read from the secure element and a secret key. The secure element device further includes general functionality only accessible to the host device using the host key information that is generated by the host device. The secure memory includes prevention measures impeding unauthorized entities from obtaining information from the secure memory.

Abstract: A first wafer includes a first semiconductor layer and first metal contacts on a side of a first surface of the first semiconductor layer. A second wafer includes a second semiconductor layer and second metal contacts on a side of a first surface of the second semiconductor layer. A handle is bonded onto a surface of the second wafer opposite to the second semiconductor layer. The second semiconductor layer is then removed to expose the second metal contacts. A bonding is then performed between the first and second wafers to electrically connect the first metal contacts to the second metal contacts.

Abstract: A method of fabricating a package for an integrated circuit chip, includes: a) mounting the integrated circuit chip to a support; b) forming a first resist layer over the integrated circuit chip which has a first opening emerging onto a central portion of the integrated circuit chip; c) forming a second resist layer over the first resist layer which has a second opening having a central portion emerging onto the first opening and a peripheral portion emerging onto the first layer; d) arranging a transparent plate in the second opening; and e) forming a third resist layer over the second resist layer and transparent plate which has a third opening emerging onto a central portion of the transparent plate.

Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.

Abstract: A bipolar transistor is manufactured by: forming a collector region; forming a first layer made of a material of a base region and an insulating second layer; forming a cavity reaching the collector region; forming a portion of the collector region and a portion of the base region in the cavity; forming an insulating fourth layer made of a same material as the insulating second layer in the periphery of the bottom of the cavity, the insulating fourth layer having a same thickness as the insulating second layer; forming an emitter region; and simultaneously removing the insulating second and a portion of the insulating fourth layer not covered by the emitter region.

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

Abstract: An electronic device includes an insulating first layer covering a second layer made of a doped semiconductor material. A cavity is formed to cross through the first layer and reach the second layer. Insulating spacers are forming against lateral walls of the cavity. A first doped semiconductor region fills the cavity. The first doped semiconductor region has a doping concentration decreasing from the second layer.

Abstract: In various embodiments, the present disclosure provides semiconductor devices, packages, and methods. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and an encapsulant on the die pad and the lead. A plurality of cavities extends into at least one of the die pad or the lead to a depth from a surface of the at least one of the die pad or the lead. The depth is within a range from 0.5 ?m to 5 ?m. The encapsulant extends into the plurality of cavities. The cavities facilitate improved adhesion between the die pad or lead and the encapsulant, as the cavities increase a surface area of contact with the encapsulant, and further increase a mechanical interlock with the encapsulant, as the cavities may have a rounded or semi-spherical shape.

Abstract: The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

Abstract: The present disclosure is directed to a contactless card including an actuation security structure that is actuated to provide authorization in accessing identifying information on an integrated circuit within the contactless card. In at least one embodiment, the actuation security structure includes a pair of conductive layers and a pair of electrodes. Ends of the pair of conductive layers overlap respective ones of the pair of electrodes. The ends of the pair of conductive layers are at and in a first elastically deformable region and the respective ones of the pair of electrodes are at and in a second elastically deformable region. An owner of the contactless card may provide authorization to access the identification information on the contactless card by applying force to both the first and second elastically deformable regions inward resulting in the ends of the conductive layers moving into electrical communication with the pair of electrodes.

Abstract: A flexible RAM loader including a shift register that includes a first data section coupled with a serial data input, and a second data section selectively coupled with a first parallel data input. The shift register is configured to load data serially from the serial data input to the first data section and the second data section when the second data section is uncoupled from the first parallel data input, and, when the second data section is coupled with the first parallel data input, configured to load data in parallel from the serial data input into the first data section and from the first parallel data input into the second data section. The flexible RAM loader also including a test register comprising a selection bit to couple the second data section with the first parallel data input.