Abstract: The embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively. In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.

Abstract: A semiconductor device including a conductive substrate; a semiconductor structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and including a plurality of recesses; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses. The plurality of recesses include a first recess and a plurality of second recesses, the first electrode includes a plurality of protrusion electrodes extending to the inside of the second, the active layer includes an inactive area arranged between the semiconductor structure and the first recess, and an active area arranged on the inner side of the first recess.

Abstract: This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.

Abstract: A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the

Abstract: A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

Abstract: Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.

Abstract: An embodiment discloses a sterilization module comprising: a frame including a support part that includes one surface and one end, and a fastening part connected to the one end; a first circuit board disposed in the fastening part; and an ultraviolet irradiation device disposed on the first circuit board, wherein the support part comprises: the other end facing the one end; and a side end facing the other end. The frame comprises: a protrusion connected to the side end of the support part; and a guide part connected to the other end of the support part. The fastening part and the guide part extend in a first direction perpendicular to one surface of the support part, and the protrusion extends in a direction opposite to the first direction. The guide part comprises: a first guide part and a second guide part that are spaced apart from each other in a second direction parallel to the one end.

Abstract: A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.

Abstract: A surface-emitting laser package comprises: a substrate; a surface-emitting laser device disposed on the substrate, and having a non-emitting area and an emitting area which includes a plurality of emitters each generating a first laser beam; a housing disposed around the surface-emitting laser device; and a diffusing part disposed on the surface-emitting laser device. The emitting area has a first width in a first direction and a second width in a second direction perpendicular to the first direction, and the second width may be greater than the first width. The diffusing part outputs the first laser beam into a second laser beam having a first angle of view in the first direction and a second angle of view in the second direction, and the first angle of view may be greater than the second angle of view.

Abstract: A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings.

Abstract: A light-emitting element package according to an embodiment comprises: a body comprising a cavity; the cavity; a first frame and a second frame arranged on the bottom surface of the cavity; a first metal layer disposed on the first frame; an ultraviolet light-emitting element disposed on the first metal layer; and a second metal layer disposed on the second frame and electrically connected to the second frame, wherein the body comprises a separation portion between the first frame and the second frame, the second metal layer extends over the sloping surface of the cavity and the separation portion of the body, and the second metal layer is spaced apart from the first metal layer in the cavity and surrounds the first metal layer.

Abstract: Disclosed in an embodiment is a light-emitting element package comprising: a body including a cavity; a light-emitting element arranged on the bottom surface of the cavity and including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer, which is arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light-transmitting member arranged on the upper part of the cavity, wherein the body includes: a lower body including the bottom surface of the cavity; an upper body including the lateral surface of the cavity; and a first insulating layer arranged between the lower body and the upper body, the lower body includes a first conductive body and a second conductive body insulated and arranged together with the first conductive body, the first conductive type semiconductor layer is electrically connected with the first conductive body, the second conductive type semiconductor layer is electrical

Abstract: A light source module including a fixing plate configured to extend in a first direction; a circuit board disposed on the fixing plate; a plurality of ultraviolet light emitting elements disposed on the circuit board in the first direction; a first reflection plate disposed at one side of the fixing plate; and a second reflection plate disposed at the other side of the fixing plate. Further, the plurality of ultraviolet light emitting elements are disposed between the first reflection plate and the second reflection plate in the first direction.

Abstract: A light emitting device including a body having a recess; a light emitting chip disposed in the recess; a first dampproof layer sealing the light emitting chip and extended from a surface of the light emitting chip to a bottom of the recess; a light transmitting layer disposed on the recess; and a second dampproof layer having an open area in which an upper surface of the light transmitting layer is exposed and extended from an outer side area of the upper surface of the light transmitting layer to an upper surface and a side surface of the body. Further, the first dampproof layer and the second dampproof layer include a fluororesin-based material.

Abstract: Disclosed is a semiconductor device package comprising: first insulation layers disposed between first wiring lines and second wiring lines; a plurality of first pads electrically connected to the first wiring lines, respectively; and a plurality of second pads electrically connected to the second wiring lines, respectively, wherein the line having the longest length extended in a first direction, among the plurality of first wiring lines, has an area of a region, which is overlapped with an electrically connected semiconductor structure, that is larger than that of the line having the shortest extended length.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.

Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.

Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.

Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode.