Abstract: An embodiment relates to a light emitting module, a flash module, and a terminal including the same. The light emitting module according to an embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; a first partition arranged at one side of the plurality of light emitting chips, and a second partition arranged at the other side of the plurality of light emitting chips so as to face the first partition; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside, and is arranged on the inner side of the first and second partitions.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.

Abstract: An embodiment discloses a sterilization module comprising: a frame including a support part that includes one surface and one end, and a fastening part connected to the one end; a first circuit board disposed in the fastening part; and an ultraviolet irradiation device disposed on the first circuit board, wherein the support part comprises: the other end facing the one end; and a side end facing the other end. The frame comprises: a protrusion connected to the side end of the support part; and a guide part connected to the other end of the support part. The fastening part and the guide part extend in a first direction perpendicular to one surface of the support part, and the protrusion extends in a direction opposite to the first direction. The guide part comprises: a first guide part and a second guide part that are spaced apart from each other in a second direction parallel to the one end.

Abstract: An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)XXE18(atoms/cm3) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0?(2X/3)]% to [99.9?(X/3)]%, wherein X may be 0 to 3.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each

Abstract: An embodiment provides a semiconductor device package, the semiconductor device package comprising: a substrate including an electrode disposed on one surface; a metal sidewall disposed on the substrate while surrounding the electrode; a semiconductor device disposed on the electrode; and a light transmitting member disposed on the metal sidewall to cover the semiconductor device, wherein the metal sidewall has the inner surface and the outer surface which are corrugated, and includes: a first metal part disposed on the substrate; a second metal part disposed on the first metal part; and a third metal part disposed on the second metal part, and the inner surface or the outer surface of the metal sidewall includes a recess portion between the second metal part and the third metal part.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a conductive substrate; a semiconductor structure, which is arranged on the conductive substrate, comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and comprises a plurality of recesses which pass through the second conductive type semiconductor layer and the active layer and up to a partial region of the first conductive type semiconductor layer; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses, wherein the plurality of recesses comprise a first recess extending along the outer surface of the semiconductor structure and a plurality of seco

Abstract: Disclosed herein is a light-emitting device package a body including a cavity; a first electrode disposed on a bottom surface of the cavity; a plurality of second electrodes disposed on the bottom surface of the cavity and configured to surround the first electrode; a first light-emitting device disposed on the first electrode; a second light-emitting device disposed on one among the plurality of second electrodes; and a light-transmitting member disposed on the body, wherein the bottom surface of the cavity includes a first edge extending in a first direction, a second edge configured to face the first edge and extend in the first direction, a third edge configured to extend in a second direction perpendicular to the first direction and connected to the first and second edges, and a fourth edge configured to face the third edge, extend in the second direction, and connected to the first and second edges; the first electrode includes an arrangement portion, on which the first light-emitting device is disposed

Abstract: A light-emitting element package according to an embodiment comprises: a body comprising a cavity; the cavity; a first frame and a second frame arranged on the bottom surface of the cavity; a first metal layer disposed on the first frame; an ultraviolet light-emitting element disposed on the first metal layer; and a second metal layer disposed on the second frame and electrically connected to the second frame, wherein the body comprises a separation portion between the first frame and the second frame, the second metal layer extends over the sloping surface of the cavity and the separation portion of the body, and the second metal layer is spaced apart from the first metal layer in the cavity and surrounds the first metal layer.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Abstract: A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.

Abstract: Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.