Abstract: A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.

Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode.

Abstract: Disclosed in an embodiment is a light source comprising: a housing; a coupling unit which fixes the housing on the target structure; a light source module for emitting light onto the target structure; and a power source module which supplies power to the light source module. The light source module comprises: a first circuit board; a second circuit board disposed on one side of the first circuit board; a third circuit board disposed on another side of the first circuit board; at least one first ultraviolet light emitting element disposed on one surface of the first circuit board; at least one second ultraviolet light emitting element disposed on one surface of the second circuit board; and at least one third ultraviolet light emitting element disposed on one surface of the third circuit board, wherein one surface of the second circuit board and one surface of the third circuit are disposed so as to face each other.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

Abstract: An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

Abstract: Disclosed in an embodiment is a semiconductor device package comprising: a body comprising a cavity; a semiconductor device disposed within the cavity; and a light transmission member disposed on an upper portion of the cavity, wherein the body comprises a first conductive part and a second conductive part disposed to be spaced apart from each other in a first direction, a first insulating part disposed between the first conductive part and the second conductive part, and a second insulating part disclosed in an edge region where a lower surface and side surfaces of the body meet, wherein the cavity comprises a stepped portion on which the light transmission member is disposed, and wherein the second insulating part overlaps with the stepped portion in a vertical direction of the body.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a seco

Abstract: Disclosed in an embodiment is a light source comprising: a housing; a coupling unit which fixes the housing on the target structure; a light source module for emitting light onto the target structure; and a power source module which supplies power to the light source module. The light source module comprises: a first circuit board; a second circuit board disposed on one side of the first circuit board; a third circuit board disposed on another side of the first circuit board; at least one first ultraviolet light emitting element disposed on one surface of the first circuit board; at least one second ultraviolet light emitting element disposed on one surface of the second circuit board; and at least one third ultraviolet light emitting element disposed on one surface of the third circuit board, wherein one surface of the second circuit board and one surface of the third circuit are disposed so as to face each other.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 ?m to 40 ?m and the thickness of the wavelength conversion layer is 1 ?m to 50 ?m.

Abstract: A light emitting device package including first and second frames spaced apart from each other; a body disposed between the first and second frames, the body including a cavity having a side surface; and a light emitting device disposed in the cavity. Further, the side surface of the cavity includes a first side portion spaced from the light emitting device and disposed around the light emitting device, a groove portion disposed around the first side portion, and a second side portion disposed around the groove portion.

Abstract: A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region ve

Abstract: A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.

Abstract: The light emitting device package disclosed in the embodiment of the invention includes first and second frames; a body disposed between the first and second frames; and a light emitting devices disposed on the first and second frames. The first frame includes a first end portion adjacent to the second frame, and the second frame includes a second end portion adjacent to the first frame and facing the first end portion, the first end portion includes a first protrusion protruding toward the second frame, and the second end portion includes a second protrusion protruding toward the first frame. The light emitting device includes first and second bonding portions disposed on the first and second protrusions. The body includes first and second reflective portions extending toward both sides of the first protrusion toward the first frame, and third and fourth reflective portions extending toward both sides of the second protrusion toward the second frame.

Abstract: A light-emitting device package according to one embodiment comprises: a body including a through-hole formed in an upper surface and a lower surface; a light-emitting device arranged on the upper surface of the body and including first and second bonding units spaced apart from each other; and first and second metal units arranged so as to be spaced apart from each other on the rear surface of the body, wherein a partial area of each of the first and second bonding units overlaps with the through-hole in a vertical direction, the first and second metal units respectively includes first and second extension portions extending to the through-hole; the first and second extension portions is electrically connected to the first and second bonding units, respectively; and the first and second extension portions face each other within the through-hole.

Abstract: The light emitting device package disclosed in the embodiment includes a first frame having a first through hole; a second frame having a second through hole; a body disposed between the first and second frames; and light emitting devices disposed on the first and second frames, wherein the first and second through holes have an area of a lower surface larger than an area of the upper surface, and centers of the upper and lower surfaces of the first through hole may be offset from each other in the vertical direction, and centers of the upper and lower surfaces of the second through hole may be offset from each other in the vertical direction.

Abstract: A light emitting device package according to an embodiment may include: a first frame including a first opening passing through upper and lower surfaces, and a second frame spaced apart from the first frame and including a second opening; first and second conductive layers disposed in the first and second openings, respectively; a body disposed between the first and second frames; a first resin disposed on the body; and a light emitting device disposed on the first resin. According to an embodiment, the light emitting device may include a first bonding part electrically connected with the first frame and a second bonding part spaced apart from the first bonding part and electrically connected with the second frame, and the first and second bonding parts may be disposed on the first and second openings, respectively.

Abstract: A light emitting device package according to an embodiment may include a first package body including first and second openings passing through the upper surface and lower surface thereof; a second package body disposed on the first package body and including a third opening passing through the upper surface and lower surface thereof; a light emitting device disposed in the third opening; a first resin disposed between the upper surface of the first package body and the light emitting device; and a second resin disposed in the third opening.

Abstract: An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, a light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.