Abstract: A semiconductor package including a leadframe has a plurality of leads, and a semiconductor die including bond pads attached to the leadframe with the bond pads electrically coupled to the plurality of leads. The semiconductor die includes a substrate having a semiconductor surface including circuitry having nodes coupled to the bond pads. A mold compound encapsulates the semiconductor die. The mold compound is interdigitated having alternating extended mold regions over the plurality of leads and recessed mold regions in between adjacent ones of the plurality of leads.

Abstract: Methods, apparatus, systems and articles of manufacture to facilitate atomic operation in victim cache are disclosed. An example system includes a first cache storage to store a first set of data; a second cache storage to store a second set of data that has been evicted from the first cache storage; and a storage queue coupled to the first cache storage and the second cache storage, the storage queue including: an arithmetic component to: receive the second set of data from the second cache storage in response to a memory operation; and perform an arithmetic operation on the second set of data to produce a third set of data; and an arbitration manager to store the third set of data in the second cache storage.

Abstract: In examples, a semiconductor package comprises a wafer chip scale package (WCSP) having circuitry formed in a device side and an insulative layer above the device side. The WCSP includes one or more plated walls extending vertically to form a defined space, the one or more plated walls configured to prevent mold compound from flowing into the defined space. The WCSP includes mold compound abutting surfaces of the one or more plated walls opposing the defined space. The WCSP includes a conductive terminal coupled to the circuitry and extending from the WCSP into the defined space.

Abstract: Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.

Abstract: A method of operating a long term evolution (LTE) communication system on a shared frequency spectrum is disclosed. A user equipment (UE) is initialized on an LTE frequency band. A base station (eNB) monitors the shared frequency spectrum to determine if it is BUSY. The eNB transmits to the UE on the shared frequency spectrum if it is not BUSY. The eNB waits for a first time if it is BUSY and directs the UE to vacate the shared frequency spectrum after the first time.

Abstract: In examples, a semiconductor device comprises a semiconductor package including a mold compound covering a semiconductor die. The semiconductor package has a surface and a cavity formed in the surface. The semiconductor device comprises an electronic device positioned within the cavity, the electronic device coupled to the semiconductor die via a conductive terminal extending through the mold compound.

Abstract: A packaged integrated circuit (IC) includes a leadframe including a die pad. The packaged IC also includes a first circuit on the die pad, the first circuit having a region. The packaged IC also includes a second circuit on the first circuit, the second circuit being spaced from the region by a gap. The packaged IC also includes an attachment layer between the first and second circuits, the attachment layer and the first and second circuits enclosing at least a part of the gap over the region. The packaged IC also includes a mold compound encapsulating the first and second circuits, the attachment layer, and the at least part of the gap.

Abstract: Methods and apparatus to determine a position of a rotatable shaft of a motor are disclosed. An example apparatus to determine a position of a rotatable shaft of a motor includes a sensor printed circuit board (PCB) structured to be mounted to a motor, the sensor PCB including a plurality of capacitive sensors, the plurality of capacitive sensors having respective ones of a plurality of capacitances that independently change as a conductor moves relative to the sensor PCB in conjunction with a rotatable shaft of the motor during an operation of the motor, and a controller electrically coupled to the sensor PCB, the controller configured to determine a position of the rotatable shaft based on the plurality of capacitances.

Abstract: In described examples, a microelectromechanical system (MEMS) includes a first element and a second element. The first element is mounted on a substrate and has a first contact surface. The second element is mounted on the substrate and has a second contact surface that protrudes from the second element to form an acute contact surface. The first element and/or the second element is/are operable to move in: a first direction, such that the first contact surface comes in contact with the second contact surface; and a second direction, such that the second contact surface separates from the first contact surface.

Abstract: A ripple voltage detector circuit comprises a pulse generator, a direct current-to-direct current (DC-DC) converter coupled to the pulse generator, and a first control loop coupled to the pulse generator and the DC-DC converter. The first control loop is configured to measure an output voltage of the DC-DC converter, determine an output ripple voltage of the output voltage, determine a ripple coefficient based on the output ripple voltage, determine a reference peak inductor current based on the ripple coefficient, and determine a peak value of an inductor current during a switching cycle, and transition a switching state of the DC-DC converter based on the reference peak inductor current and the peak value of the inductor current.

Abstract: An example apparatus includes: a semiconductor substrate; a mechanical resonator supported by the substrate, the mechanical resonator including an array of capacitors; and a plasmonic infrared (IR) absorber including an array of metal structures. The mechanical resonator is between the substrate and the IR absorber.

Abstract: One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.

Abstract: A test override circuit includes a memory that includes multiple memory instances. A path selector receives a control signal from automatic test pattern generator equipment (ATE) to control data access to data paths that are operatively coupled between the memory instances and a plurality of logic endpoints. The path selector generates an output signal that indicates which of the data paths is selected in response to the control signal. A gating circuit enables the selected data paths to be accessed by at least one of the plurality of logic endpoints in response to the output signal from the path selector.

Abstract: A microelectronic device has a substrate attached to a substrate pad on a first face of the substrate, and a component attached to the substrate on the first face. The substrate has a component placement guide on the first face. The substrate has a singulation guide on a second face of the substrate, located opposite from the first face. The microelectronic device is formed by attaching the component to a substrate sheet which contains the substrate. The substrate sheet with the component is mounted on a singulation film so that the component contacts the singulation film. The singulation guide on the second face of the substrate is located opposite from the singulation film. The substrate is singulated from the substrate sheet. The substrate with the component is attached to the substrate pad on the first face of the substrate, adjacent to the component.

Abstract: In some examples, apparatus comprises a multiplexer (MUX) adapted to be coupled to a set of battery cells and configured to provide a voltage of a different battery cell in the set of battery cells based on a MUX control signal. Apparatus comprises a comparator coupled to the MUX and configured to compare a MUX output signal to a threshold voltage to provide a comparator output signal. Apparatus comprises a digital control circuit configured to provide the MUX control signal to the MUX, to store the comparator output signal, and to use a logic AND gate to provide an AND gate output signal based on the stored comparator output signal.

Abstract: A device and method are presented. Largest and smallest successful values of a receive clock delay and a transmit clock delay are determined. A first set of parameters for an SPI coupled to a DDR flash memory are set, including the largest successful values of the transmit clock delay and the receive clock delay, and a first value of a RD cycle. A second set of parameters for the SPI are set, including the smallest successful value of the transmit clock delay and receive clock delay, and a second value of the RD cycle. One of the first and second sets of parameters is selected based on whether the first or second set of parameters results in successfully reading from the DDR flash memory over a larger range of operating temperatures. The SPI is programmed using the selected one of the first and second sets of parameters.

Abstract: A device and method for fabrication thereof is provided which results in corrosion resistance of metal flanges (802) of a semiconductor package, such as a quad flat no-lead package (QFN). Using metal electroplating (such as electroplating of nickel (Ni) or nickel alloys on copper flanges of the QFN package), corrosion resistance for the flanges is provided using a process that allows an electric current to reach the entire backside of a substrate (102) to permit electroplating. In addition, the method may be used to directly connect a semiconductor die (202) to the metal substrate (102) of the package.

Abstract: A streaming engine employed in a digital signal processor specifies a fixed read only data stream. Once fetched the data stream is stored in two head registers for presentation to functional units in the fixed order. Data use by the functional unit is preferably controlled using the input operand fields of the corresponding instruction. A first read only operand coding supplies data from the first head register. A first read/advance operand coding supplies data from the first head register and also advances the stream to the next sequential data elements. Corresponding second read only operand coding and second read/advance operand coding operate similarly with the second head register. A third read only operand coding supplies double width data from both head registers.

Abstract: An example device includes an analog comparator circuitry having a first input configured to couple to an input voltage and a second input configured to couple to a reference voltage, the analog comparator circuitry configured to output a digital value corresponding to a difference between the input voltage and the reference voltage and output sampler circuitry configured to: produce a plurality of samples of the difference, and count the number of samples in which the input voltage is greater than the reference voltage. The example device also includes reference adaption circuitry configured to: determine, based on the count, whether to adjust the reference voltage; responsive to a determination to adjust the reference voltage, determine, based on the count, an amount of adjustment; and responsive to a determination not to adjust the reference voltage, provide an indication of the reference voltage to processor circuitry.

Abstract: One example includes a passive radar receiver system including an RF receiver front-end to receive a wireless source signal and a reflected signal. An antenna switch of the front-end switches a first antenna to a receiver chain during a first time to generate first radar signal data based on a combined wireless signal comprising wireless source signal and the reflected signal, and switches a second antenna to the receiver chain during a second time to generate second radar signal data based on the combined wireless signal. A signal processor generates source signal data associated with the wireless source signal based on the first and second radar signal data and generates reflected signal data associated with the reflected signal based on the first and second radar signal data, and generates target radar data associated with a target based on the source and reflected radar signal data.