Abstract: A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.

Abstract: The present invention provides a dental member, which has a reduced size, and thus prevents damages to tooth roots upon implantation, has high strength and low elasticity, and is excellent in engraftment stability after implantation. The dental member is produced with an amorphous alloy having a composition represented by formula: ZraNibCucAld [wherein “a” ranges from 60 to 75 at. %, “b” ranges from 11 to 30 at. %, “c” ranges from 1 to 16 at. %, and “d” ranges from 5 to 20 at. %] and is used as an orthodontic anchor screw wherein the screw part has a core diameter of 0.5-1.0 mm or a length of 2-5 mm, a one-piece-type dental implant wherein the screw part has the largest diameter of 0.5-2.9 mm and a length of 2-13.4 mm, or a two-piece-type dental implant wherein the screw part has the largest diameter of 0.5-2.9 mm and a length of 2-5.9 mm.

Abstract: An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, ?-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce3+, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CexRE3?xM5+yO12+3y/2 (where 0.0001?x?0.3, 0?y?0.5 or 0?y??0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Abstract: Disclosed is a plasma processing apparatus including: a processing container; and a partition plate made of an insulating material, having a plurality of openings, and configured to partition an inside of the processing container into a plasma generating chamber and a processing chamber. A first conductive member made of a conductive material is provided on a surface of the processing chamber side of the partition plate, and the first conductive member is applied with at least one of an AC voltage, and a DC voltage of a polarity that is opposite to a polarity of charged particles guided from the plasma generating chamber into the processing chamber through each of the openings.

Abstract: Provided is a method for forming a low dielectric constant film on a substrate placed in a processing chamber inside a processing container. The method includes: generating plasma using microwaves by supplying at least a noble gas to a plasma generation chamber, which is formed above the processing chamber inside the processing container; forming a low dielectric constant film on the substrate by supplying particles from the plasma generation chamber to the processing chamber and supplying a precursor gas to the processing chamber through a shield unit provided between the plasma generation chamber and the processing chamber, the shield unit having a plurality of openings configured to communicate the plasma generation chamber with the processing chamber, and having a shielding property against ultraviolet light; and then, performing a heat treatment on the substrate.

Abstract: Disclosed is a method for etching a group III-V semiconductor, including irradiating, under an atmosphere of an organic gas, neutral particles to a group III-V semiconductor layer formed on a substrate to cause a complex reaction, thereby etching the group III-V semiconductor layer.

Abstract: One embodiment provides a solid-state battery that has a positive-electrode layer, a negative-electrode layer, and a lithium-ion-conducting solid electrolyte layer disposed between the positive-electrode layer and the negative-electrode layer. The positive-electrode layer and/or the solid electrolyte layer contains a sulfide solid electrolyte, the negative-electrode layer and/or the solid electrolyte layer contains a solid electrolyte comprising a hydride of a complex, and at least part of the sulfide solid electrolyte is in contact with at least part of the solid electrolyte comprising a hydride of a complex.

Abstract: One embodiment provides a solid-state battery that has a positive-electrode layer; a negative-electrode layer; and a lithium-ion-conducting solid electrolyte layer disposed between the positive-electrode layer and the negative-electrode layer. The positive-electrode layer contains a positive-electrode active material and a solid electrolyte comprising a hydride of a complex. Said positive-electrode active material is sulfur-based, and the solid electrolyte layer contains a solid electrolyte comprising a hydride of a complex.

Abstract: The present invention relates to a model animal spontaneously developing anemia. More specifically, the invention relates to a transgenic non-human mammal spontaneously developing anemia associated with a postnatal decrease in production of erythropoietin (Epo), Epo-producing cells prepared from the transgenic non-human mammal, and a screening method using the Epo-producing cells.

Abstract: Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.

Abstract: Continuous measurement of breathing impedance with extremely high precision is enabled by executing noise elimination. A loudspeaker applies an air vibration pressure by an oscillation wave to an oral cavity, the oscillation wave being obtained by frequency-cuffing so executed that the oscillation wave has only the frequency component that is left after the culling is executed from a plurality of different frequencies and being generated by a pulse signal for pulse drive with pulses made positive and negative separately in correspondence to the time of exhalation and the time of inhalation. A pressure inside the oral cavity is detected and a breathing flow is detected, and a signal obtained by the detection is Fourier-transformed to obtain a spectrum. Analysis of the spectrum is performed to obtain breathing impedance.

Abstract: Porous silicon particles and complex porous silicon particles suitable for negative electrode materials etc. for lithium-ion batteries, which achieve high capacity and good cycling characteristics, are provided. Porous silicon particles formed by the joining of a plurality of silicon microparticles, and having an average particle diameter of 0.1 ?m to 1000 ?m, a three-dimensional network structure having continuous gaps, an average porosity of 15 to 93%, and a structure in which the particles of a whole particle are uniform. Complex porous silicon particles formed by the joining of a plurality of silicon microparticles and a plurality of silicon compound particles, and characterized by containing a compound of silicon and composite elements, having an average particle diameter of 0.1 ?m to 1000 ?m, and having a three-dimensional network structure having continuous gaps.

Abstract: The garnet-type crystal for a scintillator of the present invention is represented by General Formula (1), (2), or (3), Gd3-x-yCexREyAl5-zGazO12??(1) wherein in Formula (1), 0.0001?x?0.15, 0?y?0.1, 2<z?4.5, and RE represents at least one selected from Y, Yb, and Lu; Gd3-a-bCeaLubAl5-cGacO12??(2) wherein in Formula (2), 0.0001?a?0.15, 0.1<b?3, and 2<c?4.5; Gd3-p-qCerRE?qAl5-rGarO12??(3) wherein in Formula (3), 0.0001?p?0.15, 0.1<q?3, 1<r?4.5, and RE? represents Y or Yb.

Abstract: The Present invention provides an arc melting furnace apparatus and a method of controlling arc discharge, in which a melt material having been melted can be stirred efficiently, avoiding labor intensive work. The furnace is provided with a mold 3 having a recess 3a and provided in a melting chamber 2, a non-consumable discharge electrode 5 for heating and melting a melt material accommodated in the recess 3a, a power source unit 10 for supplying electric power to the non-consumable discharge electrode 5, and a control device 11 which controls the power source unit to control output intensity of the arc discharge from the non-consumable discharge electrode. The control device 11 controls output current from the power source unit 10 and its current frequency to vary the output intensity of the arc discharge from the non-consumable discharge electrode 5 and stir a molten metal resulting from heating and melting the melt material.

Abstract: A metal powder production method and a metal powder production device capable of reducing the size of the device, reducing costs, and obtaining spherical metal powder are provided. Supply means supplies a downward flow of molten metal, and a plurality of jet burners emit flame jets to the downward flow of the molten metal supplied from the supply means. Each of the jet burners is provided to emit the flame jet from the same angle and from each of positions rotationally symmetrical with each other with respect to the downward flow of the molten metal.

Abstract: To provide a method whereby a 2-azaadamantane can easily be obtained in good yield. A method for producing a 2-azaadamantane represented by the formula (1), which comprises cyclizing a compound represented by the following formula (2) in the presence of an acid.

Abstract: The present invention relates to a model animal spontaneously developing anemia. More specifically, the invention relates to a transgenic non-human mammal spontaneously developing anemia associated with a postnatal decrease in production of erythropoietin (Epo), Epo-producing cells prepared from the transgenic non-human mammal, and a screening method using the Epo-producing cells.

Abstract: An arc melting furnace apparatus is provided which reduces an operation burden on a worker and shortens working hours. An arc melting furnace apparatus 1 includes a housing 2 having formed therein a melting chamber 2a, a hearth 4 provided within the melting chamber 2a and having a recessed portion 4a, and a heating mechanism 10 for heating and melting a metal material supplied into the recessed portion 4 to generate an alloy ingot. The apparatus comprises a turning member 23 rotatably supported on a supporting member 21 standing within the melting chamber 2a, a perimeter edge of the turning member 23 rotating and moving along the inner surface of the recessed portion 4a to lift the alloy ingot generated in the recessed portion 4a above the hearth 4 and turn it over, and a resilient turn-over assisting member 24 provided above an upper end of the recessed portion 4a.

Abstract: To provide a copper alloy of the FCC structure containing Ni: 3.0 to 29.5 mass %, Al: 0.5 to 7.0 mass %, and Si: 0.1 to 1.5 mass %, with the remainder consisting of Cu and incidental impurities, wherein the copper alloy is of the high strength, but is excellent in workability, and has high electrical conductivity, and can control property thereof, by precipitating a ?? phase of the L12 structure including Si at an average particle diameter of 100 nm or less in a parent phase of the copper alloy.

Abstract: The garnet-type crystal for a scintillator of the present invention is represented by General Formula (1), (2), or (3), Gd3-x-yCexREyAl5-zGazO12??(1) wherein in Formula (1), 0.0001?x?0.15, 0?y?0.1, 2<z?4.5, and RE represents at least one selected from Y, Yb, and Lu; Gd3-a-bCeaLubAl5-cGacO12??(2) wherein in Formula (2), 0.0001?a?0.15, 0.1<b?3, and 2<c?4.5; Gd3-p-qCerRE?qAl5-rGarO12??(3) wherein in Formula (3), 0.0001?p?0.15, 0.1<q?3, 1<r?4.5, and RE? represents Y or Yb.