Abstract: [Object] To increase the degree of freedom in designing a system for taking out power from a temperature gradient in terms of a thermoelectric conversion element or a thermoelectric conversion device. [Means for Achieving Object] A thermal spin-wave spin current generating member made of a magneto-dielectric body is provided with an inverse spin Hall effect member, a temperature gradient is provided in the above-described thermal spin-wave spin current generating member in the direction of the thickness, and at the same time a magnetic field is applied to the above-described inverse spin Hall effect member in the direction perpendicular to the longitudinal direction and perpendicular to the direction of the above-described temperature gradient by means of a magnetic field applying means so that a thermal spin-wave spin current is converted to a voltage which is taken out in the above-described inverse spin Hall effect member.

Abstract: Disclosed are a fetus electrocardiogram signal measuring method and its device that are capable of measuring the electrocardiogram signals of a fetus even during fetus movements and even at a gestational age during which the measurement current is weak, without the need for reattaching the electrodes and providing any shield room, even if the mother is a hospitalized or ambulant pregnant woman. The fetus electrocardiogram signal measuring device includes (1) high input impedance electrodes, (2) region-variable ground electrodes, and (3) a differential amplifier circuit and an optimization computing section.

Abstract: To provide a method whereby a 2-azaadamantane can easily be obtained in good yield. A method for producing a 2-azaadamantane represented by the formula (1), which comprises cyclizing a compound represented by the following formula (2) in the presence of an acid.

Abstract: An amorphous alloy has a specific composition of FeaBbSicPxCuy. Here, the values a-c, x, and y meet such conditions that 73 at %?a?85 at %, 9.65 at %?b?22 at %, 9.65 at %?b+c?24.75 at %, 0.25 at %?x?5 at %, 0 at %?y?0.35 at %, and 0?y/x?0.5.

Abstract: The invention provides a method for producing 2-azaadamantanes represented by formula (1) in good yields. The method includes cyclizing a compound represented by formula (2) in the presence of an acid.

Abstract: A technique for bonding an organic group with the surface of fine particles such as nanoparticles through strong linkage is provided, whereas such fine particles are attracting attention as materials essential for development of high-tech products because of various unique excellent characteristics and functions thereof. Organically modified metal oxide fine particles can be obtained by adapting high-temperature, high-pressure water as a reaction field to bond an organic matter with the surface of metal oxide fine particles through strong linkage. The use of the same condition enables not only the formation of metal oxide fine particles but also the organic modification of the formed fine particles. The resulting organically modified metal oxide fine particles exhibit excellent properties, characteristics and functions.

Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

Abstract: A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.

Abstract: An object is to provide an electromagnetic stirrer that can provide an excellent stirring force more than before. An electromagnetic stirrer has a vertical electromagnetic field generating coil (1) vertically and circumferentially provided on the outer side of a container (5), and a rotational electromagnetic field generating coil (2) provided on the outer side of the vertical electromagnetic field generating coil (1), in which an iron core (3) is inserted between the vertical electromagnetic field generating coils (1) and between the rotational electromagnetic field generating coils (2), the iron core (3) being formed of a magnetic material with magnetic isotropy and having comb teeth 3a extended to the inner surface of the vertical electromagnetic field generating coil (1).

Abstract: A processing apparatus is provided. The processing apparatus includes a processing portion, an actuator, a casing, a preload mechanism, a force sensor, and a detection unit. The processing portion includes a cutting edge. The actuator is configured to cause the processing portion to vibrate microscopically. The casing is configured to accommodate the actuator. The preload mechanism is disposed inside the casing and configured to impart a preload to the actuator. The force sensor is disposed between the cutting edge and the preload mechanism. The detection unit detects a cutting force of the processing portion based on an output of the force sensor.

Abstract: To provide a method whereby a 2-azaadamantane can easily be obtained in good yield. A method for producing a 2-azaadamantane represented by the formula (1), which comprises cyclizing a compound represented by the following formula (2) in the presence of an acid.

Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.

Abstract: A technique for bonding an organic group with the surface of fine particles such as nanoparticles through strong linkage is provided, whereas such fine particles are attracting attention as materials essential for development of high-tech products because of various unique excellent characteristics and functions thereof. Organically modified metal oxide fine particles can be obtained by adapting high-temperature, high-pressure water as a reaction field to bond an organic matter with the surface of metal oxide fine particles through strong linkage. The use of the same condition enables not only the formation of metal oxide fine particles but also the organic modification of the formed fine particles. The resulting organically modified metal oxide fine particles exhibit excellent properties, characteristics and functions.

Abstract: Disclosed are a fetus electrocardiogram signal measuring method and its device that are capable of measuring the electrocardiogram signals of a fetus even during fetus movements and even at a gestational age during which the measurement current is weak, without the need for reattaching the electrodes and providing any shield room, even if the mother is a hospitalized or ambulant pregnant woman. The fetus electrocardiogram signal measuring device includes (1) high input impedance electrodes, (2) region-variable ground electrodes, and (3) a differential amplifier circuit and an optimization computing section.

Abstract: The purpose of the present invention is to provide a diabody-type bispecific antibody, which is characterized by having low immunogenicity and high infiltrating activity into tumor tissues, and by being easily mass-produced at a low cost with use of microorganisms, and by being easily altered in function by means of genetic engineering. The diabody-type bispecific antibody shows a more remarkable effect than the conventional diabody-type bispecific antibodies and chemically synthesized bispecific antibodies even in a very low concentration and in the absence of the super antigen.

Abstract: A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (REyRE?1?y)F3 (0.0000<y<1.0000), wherein RE represents one or two or more selected from Sm, Eu, and Gd, and RE? represents one or two or more selected from Er, Tm, Yb, Lu, and Y. A rare earth fluoride solid solution material (polycrystal and/or single crystal) represented by MxREyRE?1?x?yFz., wherein RE is one or two or more selected from Ce, Pr, Nd, Eu, Tb, Ho, Er, Tm, or Yb, RE? is one or two or more selected from La, Sm, Gd, Dy, Lu, Y, and Sc, and M is one or more of Mg, Ca, Sr, and Ba.

Abstract: A processing apparatus is provided. The processing apparatus includes a processing portion, an actuator, a casing, a preload mechanism, a force sensor, and a detection unit. The processing portion includes a cutting edge. The actuator is configured to cause the processing portion to vibrate microscopically. The casing is configured to accommodate the actuator. The preload mechanism is disposed inside the casing and configured to impart a preload to the actuator. The force sensor is disposed between the cutting edge and the preload mechanism. The detection unit detects a cutting force of the processing portion based on an output of the force sensor.

Abstract: To induce a targeted non-linear optical effect by a high-peak-power light by using a light pulse from a semiconductor laser without using a light pulse from a large, high-average-power solid laser such as titanium sapphire laser. A semiconductor laser pulse beam with a wavelength of 1550 nm (for example, repeatability of 1 MHz) from a semiconductor laser (laser diode: LD) is efficiently amplified in two stages, front-end and main EDFAs. An optical filter removes a spontaneous emission light component that is noise. An optical filter picks up, from the amplified pulse beam, second harmonic light pulse produced by the non-linearity of an optical device (frequency polarization inversion Mg-added LiNbO3:PPMgLN) to produce a super-continuum light in a 800 nm wavelength region from a photonic crystal fiber (PCF).

Abstract: An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

Abstract: A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 ?m nor more than 10 ?m on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.