Abstract: A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.

Abstract: Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

Abstract: A vacuum processing apparatus for LCD substrates comprises three process chambers. Each of these process chambers is connected to a first load lock chamber via a gate. A second load lock chamber is connected to the first load lock chamber via another gate. A transfer member arranged under the air atmosphere is located to face the second load lock chamber. A retractable arm for transferring a substrate between each of the process chambers and the second load lock chamber is arranged within the first load lock chamber. Also arranged within the first load lock chamber is a storing member for temporarily storing the substrate. These storing member and the arm are supported by a rotatable base. The storing member has four different height levels for supporting the substrate, and is moved in a vertical direction.

Abstract: A wafer probing test machine including a loading/unloading section defined by a first frame to enclose plurality of cassette stages therein, a test section defined by a second frame for enclosing a test stage therein, an elevator for moving at least one of the cassette stages up and down, and a wafer transfer system having a multi-jointed arm for taking out the wafer from a cassette and transferring the wafer onto the test stage.

Abstract: A wafer mount is arranged in a process chamber of the plasma etching apparatus. The rim section of a susceptor which serves as a mount body is curved at a large curvature radius. An electrostatic chuck sheet is arranged on the top of the susceptor and its rim is curved downward along the curved rim section of the susceptor, departing from the marginal portion of a semiconductor wafer mounted thereon as it comes outward. The rim of the electrostatic chuck sheet can be thus shortened in the horizontal direction and this enables a conductive film in the electrostatic chuck sheet to be made longer in the same direction. The electrostatic and thermal connection of the wafer to the electrostatic chuck sheet can be thus enhanced.

Abstract: A probe to be electrically connected to an internal circuit of a semiconductor element, comprising a contact portion to be brought into pressure contact with an electrode formed on the semiconductor element, wherein the contact portion is made of an alloy consisting of Au, Cu, and an inevitable impurity. The contact resistance between the probe and electrode is low, and is maintained low in a stable manner even if the probe is repeatedly used.

Abstract: A wafer center detecting method comprises steps of giving turn to a wafer held by a holder, optically detecting two points at which the true rim line of the wafer crosses the fictitious rim line thereof obtained when the center of the wafer is in accord with the rotation center of the holder, and measuring an angle formed by these two intersecting points relative to a reference point, obtaining from the angle formed by the two intersecting points a direction in which the center of the wafer is shifted from the rotation center of the holder, obtaining a central angle formed by the two intersecting points relative to the rotation center of the holder, and obtaining, on the basis of the central angle and a previously-measured wafer radius, the extent to which the center of the wafer is shifted from the rotation center of the holder.

Abstract: A symbol/character discrimination apparatus having a dark-field light source for applying light beams at a predetermined angle of incidence to the surface of a sample on which symbols and/or characters are formed in an indentation pattern, a CCD camera for detecting reflected light beams from the sample surface, and a condensing lens for illumination, diaphragm, and objective optical lens for detection, arranged between the CCD camera and the sample and having a common optical axis. The condensing lens is located between the light source and the sample to condense the light beams from the light source on the surface of the sample and guides the reflected light beams from the sample to the diaphragm. The diaphragm intercepts regularly reflected light beams among the reflected light beams and guides some of the irregularly reflected light beams to the objective optical lens for detection. The objective optical lens guides some of the irregularly reflected light beams to the CCD camera.

Abstract: A probe apparatus has a mount on which the object to be examined is placed, a large number of vertical probe needles, brought into contact with electrode pads of the object to be examined, for measuring the electrical characteristics of the object to be examined, and a cleaning block including a cleaning member for removing waste adhered to the vertical probe needles, the cleaning member including a cloth which is made up of extra fine fibers. Using the cleaning member, waste and the like adhered to the vertical probe needles can be removed, ensuring the long life of the vertical probe needles.

Abstract: An IC sorting and receiving apparatus has a transportation unit for transporting ICs sorted in accordance with tested results, and a reception unit for receiving the ICs transported by the transportation unit. The reception unit includes at least one vertically movable tray loader having a vertical drive unit, and a horizontally movable tray loader provided over the vertically movable tray loader. The horizontally movable tray loader has a horizontal drive unit for moving the horizontally movable tray loader horizontally away from the region over the vertically movable loader.

Abstract: An apparatus for testing IC elements each having an upper mold and leads includes a holding section for holding the IC elements, a contact section having contact to be contacted with the leads of the IC elements and a supporting member for supporting the probes, a lift mechanism for causing the holding section and the contact section to approach each other and contact them each other, and a mold guide provided adjacent the supporting member and movable toward it. The mold guide includes an edge portion formed with grooves for receiving the probes, and a bottom face and inner faces for aligning the IC elements with the mold guide.

Abstract: A plasma generating apparatus comprising a transformer including a primary winding connected to a high frequency power source and a secondary winding having two end terminals and a plurality of tap terminals connected between the end terminals, the transformer being adapted to deliver first and second high frequency electric powers with a phase difference of 180.degree. from the end terminals, upper and lower electrodes disposed in a vacuum chamber so as to be opposed at a distance from each other and supplied with the first and second high frequency powers, respectively, and a power ratio selector for switching the tap terminals to select the ratio between the first and second high frequency powers supplied to the electrodes, wherein a to-be-processed object placed on the lower electrode is processed by means of plasma formed between the electrodes.