Abstract: A surface treatment agent containing a silylating agent (A) and a compound (C) having an amide skeleton in a molecule, and a surface treatment method for subjecting an object to be treated to surface treatment using the surface treatment agent.

Abstract: Provided are a curable composition that provides a cured film excellent in antifogging properties, an antifogging coating agent containing the composition, and a cured film formed from a cured product of the composition. A curable composition according to an embodiment of the invention contains a (meth)acrylate compound (A), and a surfactant (B), wherein the component (A) contains a (meth)acrylate compound (A1) having an HLB value of 15.2 or more, and the content of the component (B) with respect to 100 parts by mass of the component (A) is 0.1 parts by mass or more and 20 parts by mass or less.

Abstract: A method of analyzing a metal component contained as an impurity in a polymer composition that contains a polymer and an organic solvent including a step (i) of preparing a dispersion by mixing the polymer composition with an acid aqueous solution, a step (ii) of separating the dispersion prepared in the step (i) into a dispersoid layer containing the polymer and a dispersion medium layer containing the metal component, and a step (iii) of quantifying the metal component contained in the dispersion medium layer separated in the step (ii).

Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, Wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not contained

Abstract: A curable composition capable of forming a cured product having a high refractive index and suppressed increase in reflectance, a cured product of the curable composition, and a method for producing the cured product using the curable composition. The curable composition includes a photopolymerizable monomer, metal oxide nanoparticles, and a photopolymerization initiating agent. The photopolymerizable monomer includes a compound represented by the following formula (a1).

Abstract: A protective film forming agent for plasma dicing which can favorably form an opening (processed groove) of a desired shape by irradiation of a laser beam, at a desired position of the protective film, upon producing semiconductor chips by cutting a semiconductor substrate by plasma dicing, and a method for producing a semiconductor chip using this protective film forming agent. The protective film forming agent comprises a water-soluble resin, a light absorber, and a solvent, and a weight loss rate when the temperature is raised to 500° C. in thermogravimetry of the water-soluble resin is at least 80 weight %.

Abstract: A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

Abstract: The present invention aims to provide: a novel silicon-containing polymer that is alkali soluble or is soluble in an alkaline aqueous solution by using heat, etc.; a film-forming composition including the silicon-containing polymer; a method for forming a silicon-containing polymer coating using the film-forming composition; a method for forming a silica coating using the film-forming composition; and a production method for the silicon-containing polymer. The silicon-containing polymer including at least either a polysiloxane chain or oligosiloxane chain or a polysilane chain or oligosilane chain in the molecular chain thereof has a group that has e.g., a carboxy or carboxylic acid ester group and a sulfide group, introduced to the molecular chain as a result of an ene-thiol reaction.

Abstract: An energy-sensitive composition that yields a cured product with excellent thermal resistance and crack resistance, a cured product of the composition, and a method of forming a cured product. The energy-sensitive composition includes a polysilane and a thermal base generator, in which the thermal base generator includes an ionic compound and a nonionic compound. An anion moiety in the ionic compound preferably includes at least one of an anion having an oxaxanthone skeleton, an anion having a ketoprofen skeleton, and an anion having a fluorenone skeleton.

Abstract: A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A method for collecting a fine particle stored in a structure by suctioning the fine particle using a nozzle, in which, as the structure, a structure in which at least one communication portion that communicates a space storing the fine particle with one surface side and the other surface side of the structure is formed is used.

Abstract: A resist composition that contains a base material component (A), a first acid generator, and a second acid generator, the first acid generator is a compound represented by General Formula (b1), the second acid generator is a compound (B2) having an anion moiety having a molar volume of 250 cm3/mol or less, and the molar volume of the anion moiety of the compound (B2) is smaller than the molar volume of the anion moiety of the compound (B1). In the formula, Rb0 represents a specific condensed cyclic group, Yb0 represents a divalent linking group, Vb0 represents a single bond, Rc1 represents an aryl group having an electron-withdrawing group, Rc2 and Rc3 each independently represent an aryl group or are bonded to each other to form a ring together with a sulfur atom in the formula.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: A solution including an organic solvent (S), and an antioxidant (A), in which an antioxidant (A) includes a tocopherol compound (A1).

Abstract: A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group

Abstract: A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y10 is one of —O—, —(C?O)—, —O—(C?O)—, and —(C?O)—O—, Y20 is one of —(C?O)—, —O—(C?O)—, and —(C?O)—O—, and Y11 and Y21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X1, Y11, and Y21 do not contain hydroxyl groups in structures thereof, and when X1 is a single bond, Y10 is not —O—) H3C—Y11—Y10—X1—Y20—Y21—CH3??(1).

Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater

Abstract: A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal. The composition includes an acid generator which generates an acid by irradiation of active rays or radioactive rays; and a compound and/or a precursor compound, in which the molar absorption coefficient ? at a wavelength of 365 nm of the compound is at least 3000, the compound has a metal coordination group, and the compound can be formed from the precursor compound during formation of the patterned resist film.