Abstract: A laser beam irradiation device includes a light source that emits a laser beam; and a projection lens that irradiates a plurality of different areas of an amorphous silicon thin film attached to a thin-film transistor with the laser beam, wherein the projection lens irradiates the plurality of different areas of the amorphous silicon thin film with the laser beam such that a source electrode and a drain electrode of the thin-film transistor are connected in parallel to each other by a plurality of channel regions.

Abstract: A wiring correcting device is configured for irradiation of a beam of CVD-addressing laser light oscillated by a CVD-addressing laser oscillator to cause a photo-degradation of a CVD-addressing raw material gas to develop on a laser-irradiated surface of a correction-addressing substrate, thereby forming a length of correction-addressing metal wiring on the laser-irradiated surface, and provided with a modification-addressing laser oscillator, which is configured to oscillate a beam of modification-addressing laser light different in wavelength from the beam of CVD-addressing laser light, and adapted for melting agglomerates of a correction-addressing metal to be solidified.

Abstract: A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a deposition mask including: a mask layer having an aperture pattern that is formed in conformity with a transparent electrode to be formed on a display surface of a display panel, with the same shape and size as the transparent electrode; and a support layer having plural support lines formed on one surface of the mask layer across the aperture pattern. In the mask, an arrangement pitch for the support lines of the support layer is set so as to reduce moire fringes or diffraction fringes that appear due to shadows of the support lines, which are transferred onto the transparent electrode as unevenness in deposition thickness.

Abstract: A scanning exposure device includes a stage that supports a substrate, wherein a space is provided between a stage surface and the substrate; a light source unit that radiates light to a light irradiation area that extends in one direction above the substrate; and a scanning device that moves one or both of the stage and the light source unit relatively in a scanning direction that intersects the one direction. The scanning device is provided with an acceleration zone from a position in which the stage and the light source unit are at a standstill to a position in which the substrate supported by the stage enters the light irradiation area. The stage comprises a light shielding member that covers the space between the stage surface and the substrate at an end part of the stage.

Abstract: In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm?3.

Abstract: A white light-emitting device is capable of correcting deviations in chromaticity and includes a plurality of pixels, each of the plurality of pixels includes at least two sub-pixels, and each of the sub-pixels is a white light-emitting element. At least one sub-pixel out of the at least two sub-pixels includes a color filter. The optical characteristic of the color filter is set to correct the deviation of chromaticity of light emitted by the white light-emitting element. The white light-emitting device further controls an emission intensity of each of the white light-emitting elements.

Abstract: The present invention provides a method for manufacturing a deposition mask, which irradiates laser light L to a resin film 20 to form an opening pattern 4 having a polygonal shape in a plan view, the method including a step of irradiating the laser light L that is shaped using a beam-shaping mask 10 having a light transmissive window 18 that allows the laser light L to pass therethrough with light transmittance gradually reducing with distance from an edge of the light transmissive window 18 on at least one of opposing sides thereof within an area outside the light transmissive window 18 to thereby form the opening pattern 4 having at least one pair of opposing side walls 4a that are inclined to open wide toward a surface of the film 20 to be irradiated with the laser light L, from a surface opposite to the irradiated surface.

Abstract: The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.

Abstract: A deposition mask is provided. The deposition mask including: a resin film 1 in which penetrating opening patterns 4 are formed and a frame-shaped metal thin film 5 having an opening is provided on one face 1a of the film 1; a metal mask 2 provided at a position corresponding to the opening of the metal thin film 5 on one face 1a side of the film 1, the metal mask 2 being separated from and independent of the film 1, the metal mask 2 being provided with through holes 6; and a metal frame 3 positioned on one face 1a side of the film 1, the metal frame 3 supporting the film 1 and the metal mask 2 by spot-welding a portion of the metal thin film 5 and an edge region of the metal mask 2 to one end face 3a.

Abstract: A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: A production method for a deposition mask is provided. The production method includes the steps of: forming a mask member having a structure in which a thin-board magnetic metal member having a through hole and a resin film contact tightly with each other; forming a mark that has a specified depth by irradiating a part of the film through the through hole of the mask member with laser beams; and forming an opening pattern that penetrates the film by irradiating a predetermined position with laser beams, using the mark as a reference.

Abstract: The present invention relates to a method for producing a deposition mask having a structure in which a metal mask sheet with a plurality of opening patterns formed is disposed under tension on and fixed to a metal frame, the method including: a first step of bonding a peripheral part of the metal mask sheet to a synthetic fiber mesh to which constant tension is applied; a second step of cutting off a part of the mesh corresponding to a deposition effective region with a size capable of arranging therein the plurality of opening patterns of the metal mask sheet; a third step of connecting and fixing the frame to the peripheral part of the metal mask sheet on an opposite side to the mesh; and a fourth step of removing the mesh from the metal mask sheet.

Abstract: The present invention provides a mask having a plurality of elongate openings formed in a substrate, including: a plurality of reinforcement portions having a thickness smaller than a thickness of the substrate and bridging the openings across a longitudinal direction thereof on one side of the substrate; and a recess portion having a step formed by excavating an area around the openings on each side of the reinforcement portions along the longitudinal direction. The mask accordingly achieves and retains high mechanical strength without increasing the mask thickness.

Abstract: A deposition mask is provided. The deposition mask including: a resin film 1 in which penetrating opening patterns 4 are formed and a frame-shaped metal thin film 5 having an opening is provided on one face 1a of the film 1; a metal mask 2 provided at a position corresponding to the opening of the metal thin film 5 on one face 1a side of the film 1, the metal mask 2 being separated from and independent of the film 1, the metal mask 2 being provided with through holes 6; and a metal frame 3 positioned on one face 1a side of the film 1, the metal frame 3 supporting the film 1 and the metal mask 2 by spot-welding a portion of the metal thin film 5 and an edge region of the metal mask 2 to one end face 3a.

Abstract: The present invention provides a deposition mask for forming a thin-pattern by depositing a deposition material on a substrate, the deposition mask includes: a thin plate-shaped magnetic metal member 1 in which a through-hole 4 having shape and dimensions greater than those of the thin-film pattern is provided at a position corresponding to the thin-film pattern; and a resin film 2 which is provided in close contact with one surface of the magnetic metal member 1 and in which an opening pattern 5 having shape and dimensions identical to those of the thin-film pattern is formed at a position corresponding to the thin-film pattern in the through-hole 4, the resin film 2 being permeable to visible light. The opening pattern 5 is provided within an opening pattern formation region 7 surrounded by a deposition shadow region 6 defined by the thickness of the magnetic metal member 1 and the maximum angle of incidence of the deposition material to the film surface in the through-hole 4.

Abstract: A thin film transistor substrate includes a plurality of thin film transistors arranged in columns and rows respectively on a substrate. Each of the thin film transistors includes a laser annealed part in which an amorphous silicon layer that forms a channel region is laser annealed to be a polysilicon layer, each laser annealed part is disposed with a designed pitch in a scanning direction in which a laser light for laser annealing and the substrate move relatively to each other, and the laser annealed part is provided within a channel width formed in a direction orthogonal to the scanning direction and being narrower than the channel width.

Abstract: A white light-emitting device is capable of correcting deviations in chromaticity and includes a plurality of pixels, each of the plurality of pixels includes at least two sub-pixels, and each of the sub-pixels is a white light-emitting element. At least one sub-pixel out of the at least two sub-pixels includes a color filter. The optical characteristic of the color filter is set to correct the deviation of chromaticity of light emitted by the white light-emitting element. The white light-emitting device further controls an emission intensity of each of the white light-emitting elements.