Abstract: A light filter structure is provided. The light filter structure includes a substrate having a plurality of photoelectric conversion elements. The light filter structure also includes a first metal-stacking layer disposed on the substrate. The light filter structure further includes a graded layer disposed on the first metal-stacking layer. The graded layer has a continuously or non-continuously varied thickness. The light filter structure includes a flatting layer disposed on the graded layer. The light filter structure also includes a second metal-stacking layer disposed on the flatting layer.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate including a plurality of pixels, each pixel including a plurality of subpixels designed to emit light with different colors. The plurality of subpixels includes a first subpixel designed to emit red light, a second subpixel designed to emit green light, and a third subpixel designed to emit blue light. The first subpixel includes a first light source formed on the substrate, a red light-emitting layer covering the first light source, and a first yellow color filter covering the red light-emitting layer. The second subpixel includes a second light source formed on the substrate, a green light-emitting layer covering the second light source, and a second yellow color filter covering the green light-emitting layer. The third subpixel includes a third light source formed on the substrate. A method for fabricating the light-emitting device is also provided.

Abstract: A solid-state imaging device having flat microlenses is provided. The solid-state imaging device includes a semiconductor substrate having a plurality of photoelectric conversion elements. The solid-state imaging device further includes a color filter layer disposed above the semiconductor substrate. The solid-state imaging device also includes a microlens having a flat top surface disposed on the color filter layer. The flat top surface of the microlens is directly above the photoelectric conversion element, and the area of the flat top surface of the microlens is equal to the area of the photoelectric conversion element.

Abstract: The solid-state imaging device includes a first set of units disposed in a substrate and including a first pixel unit, a second pixel unit and a third pixel unit. The first pixel unit, the second pixel unit and the third pixel unit are sequentially arranged and include respective photoelectric conversion elements. The solid-state imaging device also includes a metal grid structure disposed over the first set of units and including a first portion and a second portion. The first portion is disposed between the first pixel unit and the second pixel unit and has a first width. The second portion is disposed between the second pixel unit and the third pixel unit and has a second width that is greater than the first width.

Abstract: An optical device is provided. The optical device includes a central region having a plurality of central pixels, a first region having a plurality of first pixels, a second region having a plurality of second pixels, an organic layer formed in the central region, the first region and the second region, a light collection layer surrounded by the organic layer formed in the first region and the second region, a first light collection element of the light collection layer formed in the first pixel, and a second light collection element of the light collection layer formed in the second pixel. The central region, the first region and the second region are spaced from each other along an arrangement direction, and the first region is closer to the central region than the second region. The first light collection element is different from the second light collection element.

Abstract: An optical sensor includes an optical layer disposed on a substrate, and a light shielding layer disposed on the optical layer, wherein the light shielding layer includes a first opening that partially exposes the optical layer. The optical sensor also includes a polymer material layer that fills the first opening, wherein a top surface of the polymer material layer is higher than a top surface of the light shielding layer. The optical sensor further includes an adhesive layer disposed on the light shielding layer and the polymer material layer, and a surface component disposed on the adhesive layer.

Abstract: An optical element is provided. The optical element includes a substrate, a plurality of metal grids formed on the substrate, a patterned first organic layer formed on the plurality of metal grids, a color filter surrounded by the patterned first organic layer, a second organic layer formed on the patterned first organic layer and the color filter, and a light collection layer surrounded by the second organic layer and corresponding to the color filter. The refractive index of the light collection layer is greater than that of the second organic layer. A method for fabricating the optical element is also provided.

Abstract: A solid-state imaging device includes multiple photoelectric conversion elements arrayed in a pixel array. The solid-state imaging device also includes a color filter layer having multiple color filter segments above the photoelectric conversion elements. Each of the color filter segments is disposed in a respective pixel of the pixel array. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid and a waveguide material in the spaces of the waveguide partition grid. The waveguide material has a refractive index that is higher than the refractive index of the waveguide partition grid. The waveguide material provides the same refractive index for each pixel of the pixel array.

Abstract: A method for fabricating an optical element is provided. The fabrication method includes the following steps. A substrate is provided. A plurality of metal grids are formed on the substrate. A first organic layer is formed on the substrate between the plurality of metal grids. A second organic layer is formed on the first organic layer and the plurality of metal grids. The second organic layer and the first organic layer are etched to leave the plurality of metal grids and a plurality of patterned second organic layers on the plurality of metal grids. An optical element fabricated by the method is also provided.

Abstract: A light filter structure is provided. The light filter structure includes a first filter layer disposed over the substrate. The first filter layer has a transmittance greater than 50% in a first waveband, wherein the first filter layer is an interference-type filter. The light filter structure further includes a second filter layer disposed over the substrate. The second filter layer has a transmittance greater than 50% in a second waveband, wherein the second filter layer is an absorption-type filter. The first waveband partially overlaps the second waveband at the wavelength in a third waveband, and the third waveband is in an IR region. Furthermore, an image sensor used as a time-of-flight image sensor is also provided.

Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

Abstract: An optical fingerprint sensor, includes: an image sensor array; a collimator layer disposed above the image sensor array, the collimator array having an array of first apertures; a light guiding layer disposed on the collimator layer; a light source emitting light into the light guiding layer; and a sensing area disposed above the light guiding layer. The light guiding layer allows a portion of the light from the light source to enter to the sensing area while directing the remaining portion of the light forward.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.

Abstract: An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1×1013 cm?2 to 6.7×1013 cm?2. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter array is disposed above the semiconductor substrate. The color filter array includes a first color filter, a second color filter and a third color filter. The image sensor further includes an isolated partition disposed in the color filter array to surround one of the first, second and third color filters. The isolated partition has a refractive index that is lower than the refractive indexes of the first, second and third color filters.

Abstract: An image sensor is provided. The image sensor includes: a plurality of photoelectric elements for receiving an incident light. The photoelectric elements are arranged into a plurality of unit cells, and each of the unit cells includes a first photoelectric element and a second photoelectric element. The first photoelectric element in each of the unit cells captures a first pixel in a first phase, and the second photoelectric element in each of the unit cells captures a second pixel in a second phase, wherein the first phase is different from the second phase.

Abstract: An image sensor is provided. The image sensor includes a microlens array having a plurality of microlenses; and a sensor array having a plurality of photoelectric elements that are arranged into a plurality of macro pixels. Each macro pixel includes a first photoelectric element, a second photoelectric element, a third photoelectric element, and a fourth photoelectric element that receive incident light via a first microlens, a second microlens, a third microlens, and a fourth lens in the plurality of microlenses. The first microlens, the second microlens, the third microlens, and the fourth microlens in each macro pixel have a first initial offset, a second initial offset, a third initial offset, and a fourth initial offset, respectively. The first microlens and the second microlens in each of the plurality of macro pixels further have a first additional offset and a second additional offset, respectively.

Abstract: An image sensor includes a sensing layer, a number of filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the sensing layer and surrounding each of the filter units. The grid structure includes a first partition wall disposed on the sensing layer and located between two adjacent filter units, and a second partition wall disposed on the first partition wall located between the two adjacent filter units. The refractive index of the first partition wall is less than the refractive index of the second partition wall.

Abstract: A spectrum-inspection device includes a substrate including a first photodiode and a second photodiode. The spectrum-inspection device also includes an interference-type filter disposed over the first and second photodiodes. The interference-type filter allows a first light beam with wavelength of a multi-band to pass through. The multi-band includes a first waveband, a second waveband, a third waveband, and a fourth waveband. The spectrum-inspection device also includes a first absorption-type filter disposed over the first and second photodiodes. The first absorption-type filter allows a second light beam with wavelength of a first region to pass through. The spectrum-inspection device further includes a second absorption-type filter disposed over the second photodiode. The second absorption-type filter is disposed over the first absorption-type filter and allows a third light beam with wavelength of a second region to pass through, wherein the second region overlaps the first region.

Abstract: A filter collimator is provided. The filter collimator includes a substrate having a photodiode. The filter collimator also includes an interference-type and an absorption-type filter film disposed over the substrate. When a first light is incident at a first angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a first waveband, and when a second light is incident at a second angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a second waveband, the absorption-type filter film has a transmittance greater than 50% in a third waveband, and wherein the first waveband partially overlaps the third waveband, the second waveband does not overlap the third waveband, and the second angle is greater than the first angle.