Abstract: An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

Abstract: An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.

Abstract: An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters respectively disposed at the R, G and B pixels. The image sensor also includes an IR pass filter disposed at the IR pixel and an IR filter stacked with the R, G and B filters, wherein the IR filter cuts off at least IR light with a specific wavelength. Furthermore, a method of forming an image sensor is also provided.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate having a first surface and a second surface and including a sensing area, a first metal layer formed above the first surface of the substrate and surrounding the sensing area, and a protection layer formed above the first surface of the substrate and overlying the sensing area and a part of the first metal layer to expose an exposed area of the first metal layer. The exposed area includes a first portion having a first width, a second portion having a second width, a third portion having a third width and a fourth portion having a fourth width.

Abstract: A stacked filter for an image sensor including an infrared (IR) pixel is provided. The stacked filter includes a first filter layer disposed at the IR pixel. The first filter layer allows light with wavelengths of a first band to be transmitted through. The stacked filter further includes a second filter layer stacked with the first filter layer. The second filter layer allows light with wavelengths of a second band to be transmitted through. The first band partially overlaps the second band at wavelengths of a third band. The third band is narrower than the first band and the second band. The stacked filter allows light with the wavelengths of the third band to be transmitted through. Furthermore, an image sensor containing a stacked filter is also provided.

Abstract: An image sensing device includes: an active layer with a plurality of photo-sensing elements; a color pattern disposed over one of the photo-sensing elements, wherein the color pattern has a color selected from the group consisting of red (R), green (G), and blue (B); a microlens disposed on the color pattern; and a transmissive pattern being adjacent to the color pattern and over another one of the photo-sensing elements, wherein the transmissive pattern includes a color filter portion and a microlens portion, and an absolute value of a difference of refractive indexes between the microlens and the color pattern is less than 0.3, and there is no difference of refractive indexes between the microlens portion and the color filter portion of the transmissive pattern.

Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions, and each of the partitions is disposed between two adjacent color filter segments. The color filter layer and the partition grid are disposed in the same layer. In addition, the partitions include a first partition disposed at a center line of the pixel array and a second partition disposed at an edge of the pixel array. The second partition has a top width that is larger than the top width of the first partition.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, and a plurality of color filter patterns including a red filter pattern having a first refractive index, a green filter pattern having a second refractive index and a blue filter pattern having a third refractive index formed above the substrate and the photoelectric conversion units, wherein at least one color filter pattern contains a component having a specific refractive index such that the second refractive index of the green filter pattern is higher than the first refractive index of the red filter pattern and the third refractive index of the blue filter pattern.

Abstract: The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.

Abstract: A CIS structure is provided, including a translucent structure, a reflective structure surrounding the translucent structure, and a micro lens disposed on a side of the translucent structure. The reflective structure includes a first reflective layer surrounding the translucent structure, a second reflective layer surrounding the first reflective layer, and a third reflective layer surrounding the second reflective layer. The first, second, and third reflective layers respectively have refractive indexes N1, N2, and N3, wherein N1>N2>N3.

Abstract: A color correction device for an image sensor is provided. The image sensor is divided into regions. The color correction device includes a quantum efficiency (QE) measurement circuit, an addressing circuit, and a correction circuit. The QE measurement circuit generates a color signal according to a sensing signal from each pixel of the image sensor. The addressing circuit receives the color signal corresponding to each pixel, obtains a location of each pixel on the image sensor, and averages all of the color signals corresponding to the pixels whose locations are disposed in one of the regions to obtain an average color signal. The correction circuit receives the average color signal to obtain a color correction matrix of the one of the regions and corrects the color signals of the pixels whose locations are in the one of the regions by the color correction matrix.

Abstract: A double-lens structure and a method for fabricating the same are provided. The double-lens structure includes a first lens structure formed of a color filter layer having a first refractive index and a second lens structure formed of a micro-lens material layer having a second refractive index and disposed on the first lens structure. The first refractive index of the color filter layer is different from the second refractive index of the micro-lens material layer. An incident light enters the second lens structure and then passes through the first lens structure. Further, a method for fabricating the double-lens structure is also provided.

Abstract: A camera module and a fabrication method thereof are provided. The camera module includes a lens structure and an image sensor device chip disposed under the lens structure. The lens structure includes a transparent substrate and a lens disposed on the transparent substrate. A spacer is disposed on the transparent substrate to surround the lens, wherein the spacer contains a base pattern and a dry film photoresist. The method includes forming a base pattern on a carrier and attaching a dry film photoresist on the carrier. The dry film photoresist is planarized by a lamination process and then patterned to form a spacer. A transparent substrate having a plurality of lenses is provided. The spacer is stripped from the carrier, attaching on the transparent substrate to surround each of the lenses, and then bonded with image sensor device chips.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment.

Abstract: An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via hole therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via hole for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.

Abstract: An imaging sensor is provided. The imaging sensor includes: a filter array used for extracting a specified color component of an incident light; and photoelectric elements for receiving the incident light via the filter array. The filter array includes: a green filter for extracting a green component; a red filter for extracting a red component; a blue filter for extracting a blue component; and a first infrared filter for extracting a first infrared component for the green component. The first infrared filter is implemented by the green filter and an infrared high-pass filter of a specific wavelength.

Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.

Abstract: A method for forming an image sensing device is disclosed, including providing a molding apparatus, disposing a lens in the molding apparatus, injecting an injection material into a chamber of the molding apparatus to form a shell which is connected to the lens, opening the chamber of the molding apparatus to remove the lens and the shell connected to the lens, and assembling the shell with an image sensing element.