Abstract: An imaging device is provided. The imaging device includes a plurality of photoelectric conversion elements formed on a substrate in an active area. A microlens structure is disposed above the photoelectric conversion elements. A dummy pattern having a plurality of protruding elements is disposed above the substrate in a peripheral area surrounding the active area. Furthermore, a passivation film is conformally formed on the microlens structure and the dummy pattern. The passivation film on the tops of the protruding elements of the dummy pattern has a surface area smaller than a surface area of the peripheral area outside of the microlens structure.

Abstract: An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

Abstract: Methods of fabricating solid-state imaging devices having a flat microlens array are provided. The method includes providing a semiconductor substrate having a plurality of photoelectric conversion elements. A color filter layer is formed above the semiconductor substrate. A lens material layer is formed on the color filter layer. A hard mask having a lens-shaped pattern is formed on the lens material layer. The method further includes etching both the hard mask and the lens material layer to form a microlens with a flat top surface that is formed from the lens material layer, and to leave a portion of the hard mask on the flat top surface of the microlens. The method also includes removing the portion of the hard mask that remains on the microlens.

Abstract: An optical sensor includes a sensing layer, a first shading filter, a second shading filter, and an alignment mark. The sensing layer includes an active area, a shading area, and a peripheral area. The sensing layer includes sensing units located in the active area. The first shading filter is disposed on the shading area. The second shading filter is disposed on the first shading filter. The alignment mark is disposed on the peripheral area. When a light beam is emitted to the shading area, the second shading filter is configured to block a first component of the light beam, and the first shading filter is configured to block a second component of the light beam.

Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer.

Abstract: An image sensing device is provided. The image sensing device includes a substrate having a pixel array with a plurality of pixels. A light guide structure is disposed over the substrate, forming a plurality of light pipes and a plurality of reflecting portions surrounding the light pipes. The light pipes are aligned with the pixels of the pixel array. The invention also provides a method for fabricating the image sensing device.

Abstract: A color filter array having a lower density of the color blue is provided. The color filter array includes: a plurality of color filter units arranged in a 3×3 array. The color filter units include a blue filter and a plurality of other filters, and the blue filter is disposed in the center of each 3×3 array, wherein a number of the blue filter is fewer than that of each kind of the other filters in each 3×3 array.

Abstract: An image sensor includes a sensing layer for sensing a light beam and a number of pixel groups. Each of the pixel groups includes a yellow filter unit allowing a green light component and a red light component of the light beam to pass through, a green filter unit allowing the green light component of the light beam to pass through, and a blue filter unit allowing a blue light component of the light beam to pass through.

Abstract: A spectrum-inspection device includes: a sensor unit array including a first sensor unit and a second sensor unit; a dual-band pass filter disposed on the sensor unit array to cover the first sensor unit and the second sensor unit, wherein the dual-band pass filter allows a first waveband and a second waveband of a light beam to pass through; and a filter disposed on the dual-band pass filter to cover the second sensor unit, wherein the filter allows wavelengths of a light beam longer than a first wavelength to pass through, wherein the first wavelength is longer than a peak wavelength of the first waveband and shorter than a peak wavelength of the second waveband.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, a carrier, and a light source. The light-guiding structure is disposed on the image sensor, and includes a light-guiding layer and a top layer. The light-guiding layer is disposed on the image sensor. The top layer is disposed on the light-guiding layer. The carrier is disposed on the light-guiding structure. The carrier has a number of wells arranged in an array located over the guiding portions. Each of the wells is configured to receive a specimen.

Abstract: A 3D image sensor including a sensing layer, a grid layer, and microlenses. The sensing layer includes sensing units. The grid layer is disposed on the sensing layer, and includes an opacity material and transparent elements penetrating through the opacity material. The microlenses are disposed on the grid layer. Each of the microlenses is located over two adjacent transparent elements.

Abstract: A double-lens structure and a method for fabricating the same are provided. The double-lens structure includes a first lens structure formed of a color filter layer having a first refractive index and a second lens structure formed of a micro-lens material layer having a second refractive index and disposed on the first lens structure. The first refractive index of the color filter layer is different from the second refractive index of the micro-lens material layer. An incident light enters the second lens structure and then passes through the first lens structure. Further, a method for fabricating the double-lens structure is also provided.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate with a plurality of photoelectric conversion units formed therein, a plurality of color filters formed above the substrate, wherein the color filters are divided into red color filters, green color filters and blue color filters, a plurality of microlenses correspondingly formed above the color filters, a transparent material layer formed above the microlenses, a first filter blocking infrared (IR) light formed above the transparent material layer, a second filter allowing transmission of visible light formed above the first filter, and a lens module formed above the second filter.

Abstract: An optical sensor includes a sensing layer, a color filter, and a grid structure. The sensing layer includes a photodiode. The color filter includes a lower portion disposed on the sensing layer, and an upper portion disposed on the lower portion. The upper portion includes a bottom surface connected to the lower portion, a first inclined surface inclined relative to the bottom surface, and a second inclined surface that is opposite to the first inclined surface and inclined relative to the bottom surface. The grid structure surrounds the upper portion. Between the first inclined surface and the bottom surface is a first acute angle, and between the second inclined surface and the bottom surface is a second acute angle.

Abstract: An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a photo-sensing element, and the passive layer is disposed over the semiconductor substrate. The light-collecting element is disposed over the passive layer, and includes first, second and third loops. The first loop has a first width. The second loop surrounds the first loop and has a second width that is less than the first width. The third loop surrounds the first and second loops, and has a third width that is less than the second width. The light-collecting element aligns with the photo-sensing element, and the first, second, and third loops include different refractive indices.

Abstract: A spectrum-inspection device includes a multi-band pass filter, a filter array, and a sensing layer. The multi-band pass filter allows a first waveband, a second waveband, and a third waveband of a light beam to pass through. The light beam passes through the multi-band pass filter forms a multi-band beam. The filter array is disposed under the multi-band pass filter. The filter array includes a first filter allowing wavelengths of the multi-band beam longer than a first wavelength to pass through, a second filter allowing wavelengths of the multi-band beam longer than a second wavelength to pass through, and a third filter allowing wavelengths of the multi-band beam longer than a third wavelength to pass through. The second waveband is between the first wavelength and the second wavelength, and the third waveband is between the second wavelength and the third wavelength.

Abstract: An image sensor includes a sensing layer, a transparent plate, and a first guided-mode resonance structure. The sensing layer includes sensing units configured to sense a light beam. The transparent plate is located above the sensing layer. The first guided-mode resonance structure is disposed on a first area of the transparent plate, and blocks a first waveband of the light beam from passing through.

Abstract: The present invention provides an image sensor, including: a sensor array layer including a plurality of normal sensor units and a pair of autofocus sensor units; a plurality of color filter units disposed on the sensor array layer to cover the plurality of normal sensor units; a pair of IR-pass filter units disposed on the sensor array layer to respectively cover the pair of autofocus sensor units; a micro-lens layer including a plurality of micro-lenses disposed on the color filter units and the IR-pass filter units, wherein one of the pair of autofocus sensor units detects infrared light came from a first side, and the other of the pair of autofocus sensor units detects infrared light came from a second side opposite to the first side to perform a phase detection autofocus function.

Abstract: The present invention provides an image sensor, including: a sensor array layer formed of a plurality of normal sensor units and a plurality of spectrometer sensor units; a first guided mode resonance (GMR) structure having a first grating pitch and disposed on the sensor array layer to cover N (where N is an integer) of the spectrometer sensor units; a second GMR structure having a second grating pitch and disposed on the sensor array layer to cover N of the spectrometer sensor units; and a plurality of color filter units disposed on the sensor array layer to cover the normal sensor units.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate having a first surface and a second surface and including a sensing area, a first metal layer formed above the first surface of the substrate and surrounding the sensing area, and a protection layer formed above the first surface of the substrate and overlying the sensing area and a part of the first metal layer to expose an exposed area of the first metal layer. The exposed area includes a first portion having a first width, a second portion having a second width, a third portion having a third width and a fourth portion having a fourth width.