Abstract: A technique for interconnecting PV cells using partial overlapping method is disclosed with at least one part of the PV cell is applied with a non-conductive bonding material. Another PV cell is then placed above this PV cell in a partial overlapping manner and depending on the type of bonding material used, the necessary curing step is performed. The disclosed method can be used to interconnect 1) PV cells; 2) shingled PV strings; 3) PV cell and other components to external circuitry, within a shingled PV module. The interconnecting method also improves the aestheticism, reliability, and manufacturability of shingled PV modules that are constructed with shingled PV cells.

Abstract: A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

Abstract: A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

Abstract: Disclosed is a photovoltaic power generation module having a single layer structure in which a pattern glass and a solar cell module are integrated. The disclosed photovoltaic power generation module comprises: a pattern glass comprising a base member, and a pattern member provided thereon in which an optical pattern is formed; a solar cell module provided with a solar cell; a plurality of supportive adhering parts in a pillar shape adhered to the pattern member; and a filler filled between the supportive adhering part and the solar cell module, wherein the pattern glass and the solar cell module are integrated through the supportive adhering parts and the filler, and the height of the supportive adhering parts are configured to be greater than the height of the pattern member so that a gap for forming an air layer between the pattern member and the filler can be provided.

Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment an optoelectronic semiconductor component includes a front side, a first diode and a second diode arranged downstream of one another in a direction away from the front side and electrically connected in series such that the first diode is located closer to the front side than the second diode and an electrical tunnel contact between the first and the second diodes, wherein the second diode comprises a diode layer of SinGe1-n, where 0?n?1, wherein the first diode comprises a first partial layer of SiGeC, a second partial layer of SiGe and a third partial layer of SiGeC, and wherein the partial layers follow one another directly in the direction away from the front side according to their numbering such that the first and third partial layers are of (SiyGe1-y)1-xCx, whereas 0.05?x?0.5 or 0.25?x?0.75, and whereas 0?y?1, and the second partial layer is of SizGe1-z, whereas 0?z?1.

Abstract: This solar panel (12) includes a structure (14) and at least two photovoltaic cells (16A, 16B) each defining a lateral contact face (30A, 30B) and including a base element (20A, 20B), a grid of electric conductors (24A, 24B) and a protective element (22A, 22B) made from transparent material, the grid (24A, 24B) including at least one conductive wire extending along the lateral contact face (30A, 30B). The cells (16A, 16B) are arranged on the structure (14) such that at least part of each of the lateral contact faces (30A, 30B) is arranged across from the other part. The solar panel (12) further includes a barrier (18A) made from dielectric material arranged on the structure (14) between the lateral contact faces and extending along the opposite parts of these faces (30A, 30B).

Abstract: There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1-xA?xBX3-yX?y, wherein A is a formamidinium cation (HC(NH)2)2+), A? is a caesium cation (Cs+) B is at least one divalent inorganic cation, X is iodide and X is bromide, and x is greater than 0 and equal to or less than 0.4 and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.

Abstract: The present disclosure relates to a thermoelectric material, and more specifically to a superlattice thermoelectric material and a thermoelectric device using the same. The superlattice thermoelectric material has a composition of a following Chemical Formula 1: (AX)n(D2X?3)m??,<Chemical Formula 1> wherein, in the Chemical Formula 1, A is at least one of Ge, Sn, and Pb, X is a chalcogen element, and at least one of S, Se, and Te, D is at least one of Bi and Sb, each of n and m is an integer between 1 and 100, and A or X is at least partially substituted with a dopant.

Abstract: Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

Abstract: A solar cell includes a crystal substrate which has a major surface on a light reception side provided with a first texture surface and a major surface on a non-light reception side provided with a second texture surface. The second texture surface occupies 20% or more of the area of the major surface on the non-light reception side.

Abstract: The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.

Abstract: This inter-connector is provided with: a first electrode; a second electrode; and a connecting body which connects the first electrode and the second electrode. The connecting body comprises: a first junction portion connected to the first electrode; a first bypass portion connected with respect to the first junction portion; a first reinforcement portion connected to the first junction portion and the first bypass portion; a second junction portion connected to the second electrode; a second bypass portion connected with respect to the second junction portion; a second reinforcement portion connected to the second junction portion and the second bypass portion; and a connection portion connecting the first bypass portion and the second bypass portion.

Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.

Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

Abstract: A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.

Abstract: An inverted metamorphic multijunction solar cell comprising: an upper first solar subcell having a first band gap; a middle second solar subcell disposed adjacent to the upper first solar subcell and having a second band gap smaller than said first band gap; a graded interlayer disposed adjacent to the middle second solar subcell and having a band gap that remains constant throughout its thickness; a lower third solar subcell disposed adjacent to said graded interlayer and having a fourth band gap that is smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell; a back surface field (BSF) layer disposed directly adjacent to the base layer of said lower third solar subcell; at least one distributed Bragg reflector (DBR) layer disposed directly adjacent to the back surface field (BSF) layer.

Abstract: Provided is a photoelectric conversion element including a first electrode, an electron-transporting layer, a hole-transporting layer, and a second electrode, wherein the hole-transporting layer and the second electrode are in contact with each other, and the hole-transporting layer satisfies the following formula: 0%<Rc(50)?0.75% where an average thickness of the hole-transporting layer is determined as X (nm), and Rc(50) is a ratio of an area of projected parts that are projected from a standard line towards the second electrode, where the standard line is present at a position that is away, by X+50 (nm), from an opposite surface of the hole-transporting layer to a surface of the hole-transporting layer in contact with the second electrode.

Abstract: The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.

Abstract: A cooling system for thermally conditioning a component which includes a battery and a heat spreader supporting the battery. Multiple thermoelectric devices are bonded to the heat spreader, for example, using solder or braze, which provides improved heat transfer. A cold plate assembly operatively thermally engages the thermoelectric devices.