Abstract: An OLED display panel and a fabrication method thereof, and a display device are disclosed. The OLED display panel comprises: an array substrate and a package cover plate disposed opposite to each other, and an OLED layer which is formed on a surface of the array substrate facing the package cover plate and comprises a plurality of OLEDs. The OLED display panel further comprises: a first thin film packaging layer, covering the OLED layer and bonded to the array substrate; a color filter layer, provided on a side of the first thin film packaging layer facing the package cover plate; and a bonding adhesive, filled between the array substrate and the package cover plate to bond the array substrate and the package cover plate, the bonding adhesive covering the color filter layer and the first thin film packaging layer.

Abstract: A method for forming a memory device is provided. The method includes forming a plurality of memory cells. The method also includes performing a first baking on the memory cells. The method further includes setting a specified current, and after performing the first baking, performing a test process on the memory cells. The test process includes reading the current of the memory cells. When the read current of the memory cells is larger than or equal to the specified current, the test process of the memory cell is done. When the read current of the memory cells is smaller than the specified current, a re-forming process is performed on the memory cells to form a plurality of re-formed memory cells, and then the test process is performed on the re-formed memory cells.

Abstract: An organic electroluminescent display device of the invention includes a substrate on which a plurality of pixels are disposed in a matrix, an under layer that includes an organic insulating film and lower electrodes, a pixel separation film that is provided on the under layer so as to project therefrom, and an organic layer that covers the top of the under layer and the top of the pixel separation film and includes at least a light-emitting layer. A first adhesive film formed of one or more kinds of substances selected from the group consisting of amorphous carbon, diamond-like carbon, silicon, gallium, germanium, graphite oxide, and silicon carbide is formed at least partially between the top of the under layer and the pixel separation film or between the pixel separation film and the organic layer.

Abstract: An organic light-emitting device includes a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material represented by Formula 1 below, and at least one second material represented by Formula 2 below:

Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

Abstract: The present invention discloses an organic light-emitting diode (OLED) and an electronic device, wherein the OLED includes a first carrier transport layer and a second carrier transport layer that are set opposite to each other, and a light-emitting layer; the light-emitting layer includes a first light-emitting sub-layer with a hollow structure, and a second light-emitting sub-layer which includes a body part and a projecting part, wherein the projecting part projects from the body part and is accommodated in the hollow structure; wherein a surface of the first light-emitting sub-layer and a surface of the projecting part form the first surface of the light-emitting layer, and a surface of the body part forms the second surface of the light-emitting layer. By the present invention, the working voltage is lowered, the power consumption is reduced, and in addition, the manufacturing process is simplified due to the reduction of the number of layers.

Abstract: According to one embodiment, an organic EL device includes an insulating substrate including a first main surface and a second main surface, a switching element formed on the insulating substrate at the first main surface side, a first electrode electrically connected to the switching element, a second electrode opposed to the first electrode, an organic luminescent layer disposed between the first electrode and the second electrode, a reflective plate disposed between the insulating substrate and the first electrode, and a conductive film covering the second main surface of the insulating substrate.

Abstract: An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract: A light-transmissive adhesive film includes an adhesive layer in which an elastic modulus in a second area is higher than that in a first area, and also includes release layers on upper and lower portions of the adhesive layer.

Abstract: Disclosed is a method for the production of an organic light emitting device of the OLED type, the method including the following sequences of steps: a step of forming a stack of layers on a substrate; the stack including, successively and in the following order, a first electrode, an organic layer and a second electrode; a step of positioning a cover; a step of forming a connection pad. The method also includes: a step of fixing a first end of at least one elongated electrical connection member to an area of the connection pad covering a portion of the second face of the cover and a step of forming a layer of resist, the layer of resist being so configured as to preserve an electrical access to a second end of the elongated electrical connection member above the layer of resist.

Abstract: The present invention provides an OLED pixel structure, comprising red, green, blue sub pixel areas, and the red, the green, the blue sub pixel areas respectively comprise a substrate, an anode formed on the substrate, a flat layer formed on the anode, an organic light emitting layer formed on the flat layer and a cathode formed on the organic light emitting layer, and an aperture area is formed on the flat layer, and the organic light emitting layer contacts the anode through the aperture area, and the anode comprises a positive electrode and a positive electrode compensation area coupled to the positive electrode, and the cathode, the positive electrode compensation area and a sandwiched layer between the cathode and the positive electrode compensation area constitute a compensation capacitor, and the compensation capacitor respectively makes total capacitance values of the red, green, blue sub pixel areas are equivalent to reach the capacitance value required by an drive circuit of the OLED element.

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.

Abstract: A method of fabricating a switched-capacitor converter includes providing a semiconductor layer having a top surface and a bottom surface, forming switching elements on the top surface of the semiconductor layer, forming a first insulation layer and first interconnection patterns on the switching elements, forming a second insulation layer over the first insulation layer and the first interconnection patterns, forming a second interconnection pattern over the second insulation layer, forming a third insulation layer over the second insulation layer and the second interconnection pattern, forming third interconnection patterns and a lower interconnection pattern over the bottom surface of the semiconductor layer, forming a capacitor over the lower interconnection pattern, forming a fourth insulation layer over the bottom surface of the semiconductor layer to expose an upper electrode pattern of the capacitor, forming a fifth insulation layer covering the capacitor, and forming pads in the fifth insulation laye

Abstract: Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

Abstract: Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

Abstract: A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least one fin structure in contact with the pedestal of the insulating material. Source and drain region structures are present on opposing sides of the at least one fin structure. At least one of the source and drain region structures includes at least two epitaxial material layers. A first epitaxial material layer is in contact with the at least one layer of semiconductor material. A second epitaxial material layer is in contact with the at least one fin structure. The first epitaxial material layer is separated from the at least one fin structure by the second epitaxial material layer. A gate structure present on the at least one fin structure.

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract: The present invention provides an AMOLED backplane structure and a manufacturing method thereof. In each sub-pixel, a TFT substrate (TS) includes a corrugation structure (4) formed in an area corresponding to an opening (71) of a pixel definition layer (7). The corrugation structure (4) includes a plurality of raised sections (41) and a recessed section (42) formed between every two adjacent ones of the raised sections (41). An upper surface of a portion of the planarization layer (5) and a portion of a pixel electrode (6) that correspond to and are located above the corrugation structure (4) include curved surfaces corresponding to the corrugation structure (4). The AMOLED backplane structure helps ensure the planarization layer (5) is smooth and free of abrupt change sites and also makes the pixel electrode (6) in a form of a curved surface to increase an effective displaying surface, extend the lifespan of the OLED, reduce difficulty of manufacturing, and improve resolution.

Abstract: An organic EL device includes a pair of electrodes and an organic compound layer between pair of electrodes. The organic compound layer includes an emitting layer including a first material, a second material and a third material, in which singlet energy EgS(H) of the first material, singlet energy EgS(H2) of the second material, and singlet energy EgS(D) of the third material satisfy a specific relationship.