Abstract: A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Abstract: A temperature control device and a temperature control method are provided. The temperature control device is located at an interface between a photoresist coating and developing machine and a lithography machine and includes: a temperature detection device, a gas flow generator and a controller. The temperature detection device and the gas flow generator are respectively connected to the controller. The temperature detection device is configured to detect an actual temperature at the interface in real time. The gas flow generator is at least configured to generate a gas flow sealing knife around the interface. The controller is configured to control the gas flow generator to generate the gas flow sealing knife responsive to that the actual temperature detected by the temperature detection device is not equal to the target temperature, to control the actual temperature at the interface to reach the target temperature through the gas flow sealing knife.

Abstract: Described is a telecentric illuminator that can be used, for example, in a mask aligner system for semiconductor wafer processing or as part of a solar simulator system for characterization of solar cells. The telecentric illuminator includes a tapered optic, a lens group having a plurality of lenses and an aperture stop, and a hybrid Fresnel lens. The Fresnel lens is disposed at a position along the optical axis of the telecentric illuminator to generate a telecentric image of the aperture stop at an illumination plane. The Fresnel lens may have a curved central portion and the aperture stop may be apodized to achieve desired illumination characteristics and improve the resolution of a mask aligner system.

Abstract: A system for positioning, a stage system, a lithographic apparatus, a method for positioning and a method for manufacturing a device in which use is made of a stage system. The stage system has a plurality of air bearing devices. Each air bearing device has: a gas bearing body which has a free surface, a primary channel which extends through the bearing body and has an inlet opening in the free surface, and a secondary channel system which extends through the bearing body and which has a plurality of discharge openings in the free surface. The flow resistance in the secondary channel system can be higher than the flow resistance in the primary channel.

Abstract: An exposure machine and an exposure method are provided in some embodiments of the present disclosure. The exposure machine includes: a detection module, configured to detect whether there are attachments on the surface of a reticle; a cleaning device, configured to clean the attachments on the surface of the reticle; and an exposure module, configured to expose the reticle having no attachments detected.

Abstract: A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Abstract: An illumination apparatus configured to provide illumination while changing a spectrum of light from a light source includes a wavelength variable unit configured to change a spectrum of irradiating light, and an optical system configured to irradiate the wavelength variable unit with the light from the light source. The wavelength variable unit is disposed so that an incident surface of the wavelength variable unit on which the light emitted from the optical system is incident is tilted with respect to a plane perpendicular to an optical axis of the optical system.

Abstract: A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.

Abstract: An alignment method includes directing an illumination beam with a varying wavelength or frequency towards an alignment target, collecting diffraction beams from the alignment target and directing towards an interferometer. The alignment method also includes producing, by the interferometer, two diffraction sub-beams from the diffraction beams, wherein the diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment method further includes measuring interference intensity of the diffraction beams based on a temporal phase shift, wherein the temporal phase shift is a function of the varying wavelength or frequency of the illumination beam and a fixed optical path difference between the diffraction beams. The alignment method also includes determining a position of the alignment target from the measured interference intensity.

Abstract: A lift pin assembly is provided. The lift pin assembly includes a level bolt mounted on a first frame lifted by a lifting device, a lift pin having a weight provided at a lower end of the lift pin, and supported by the level bolt, and a pressing bracket to forcibly move down the lift pin, when the lift pin is locked into a pin hole. The pressing bracket is adjusted in height to be set while maintaining a specific gap to a top surface of the weight.

Abstract: Provided is a detection apparatus having a high detection accuracy. A detection apparatus comprises an optical element arranged at a position optically conjugate to a target surface, including a first region for forming illumination light that illuminates the target surface with a first angle distribution and a second region for forming illumination light that illuminates the target surface with a second angle distribution, a measurement mark arranged at the target surface; and a detector for detecting a deviation direction and a deviation amount of the optical element based on reflection light from the measurement mark illuminated by the first region and the second region of the optical element.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: An apparatus for removing a residue of an EUV light source vessel including an internal side surface having a curved surface is provided. The apparatus includes a frame portion configured to be disposed on a bottom surface of an EUV light source vessel and a head portion above the frame portion. The head portion is configured to be rotatably moved on a circular trajectory while maintaining a desired (and/or alternatively predetermined) distance from the curved surface of the EUV light source vessel. The head portion may have a heating member configured to emit heat toward the curved surface of the EUV light source vessel. The heating member may have a shape curved in an arc corresponding to a portion of the circular trajectory.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: Methods for manufacturing a semiconductor structure are provided. A substrate is provided. A metrology target is formed in a layer over the substrate according to a first layer mask and a second layer mask. The metrology target includes a first pattern formed by a plurality of first photonic crystals corresponding to the first layer mask and a second pattern formed by a plurality of second photonic crystals corresponding to the second layer mask. First light is provided to illuminate the metrology target. Second light is received from the metrology target in response to the first light. The second light is analyzed to detect overlay-shift between the first pattern and the second pattern. The first pattern and the second pattern are arranged to cross in one direction in the metrology target.

Abstract: A method includes driving, while producing a burst of pulses at a pulse repetition rate, a spectral feature adjuster among a set of discrete states at a frequency correlated with the pulse repetition rate; and in between the production of the bursts of pulses (while no pulses are being produced), driving the spectral feature adjuster according to a driving signal defined by a set of parameters. Each discrete state corresponds to a discrete value of a spectral feature. The method includes ensuring that the spectral feature adjuster is in one of the discrete states that corresponds to a discrete value of the spectral feature of the amplified light beam when a pulse in the next burst is produced by adjusting one or more of: an instruction to the lithography exposure apparatus, the driving signal to the spectral feature adjuster, and/or the instruction to the optical source.

Abstract: A lithographic apparatus has: a conduit through which a gas can flow; a gas mover configured to cause the gas to flow in the conduit; a wall in contact with the gas in the conduit and defining a membrane aperture therein; and an acoustic filter including a flexible membrane fixed in the membrane aperture. The acoustic filter reduces transmission of acoustic disturbances without adding any flow resistance.

Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.