Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Abstract: The invention relates to a method and an apparatus for characterizing a microlithographic mask. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit which has a plurality of pixels by an imaging optical unit.

Abstract: In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.

Abstract: A method includes: receiving a photomask; patterning a wafer by directing a first radiation beam to the wafer through the photomask at a first tilt angle; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam.

Abstract: A multi-channel device and method for measuring the distortion and magnification of objective lens. The multi-channel device for measuring the distortion and magnification of objective lens comprises an illumination system, a reticle stage, a test reticle, a projection objective lens, a wafer stage and a multi-channel image plane sensor, wherein the multi-channel image plane sensor simultaneously measures the image placement shifts between actual image points and nominal image points after a plurality of object plane test marks are imaged by the projection objective lens, and calculates the distortion and magnification errors of the objective lens by fitting, which shortens the measurement time, eliminates the influence of wafer stage errors on the measurement accuracy and improves the measurement accuracy.

Abstract: Provided in the disclosure is a photomask for detecting flare degree of lens of exposure machine. The photomask includes a central exposure area and a peripheral area, exposure light of the exposure machine passing through the lens and then penetrating the central exposure area to expose photoresist on a wafer, wherein the entire central exposure area is provided with a shading layer to prevent the exposure light from penetrating; and the peripheral area is provided with a plurality of light-transmitting stripes, and stray light formed after the exposure light passes through the lens penetrates the plurality of light-transmitting stripes to expose the photoresist. Further provided in the disclosure is a method for detecting flare degree of lens of exposure machine by using the photomask. According to the disclosure, a lens flare problem of an exposure machine can be found and solved in time.

Abstract: Provide are a reticle transfer device and an exposure system. The reticle transfer device includes a bearing member, a light source, a light detector and a controller. The bearing member is configured to bear the reticle, and the light source is configured to emit irradiation light to the reticle and form reflected light. The light detector is configured to obtain the reflected light and generate a light detection signal. The controller is configured to determine whether particulate matter exists on a surface of the reticle based on the light detection signal. The reticle transfer device can determine whether particulate matter exists on the surface of the reticle in real time based on the light detection signal.

Abstract: A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: A lamp having a fin provided in a periphery of a metal base. The fin includes a first surface close to a bright spot of a light-emitting tube and a second surface far from the bright spot on an opposite side of the first surface. A distance between a first inner edge of the first surface and a bright spot plane as a plane orthogonal to a center axis of the metal base including the bright spot is shorter than a distance between the bright spot plane and a first outer edge of the first surface. A distance between the first inner edge and the first outer edge of the first surface is not shorter than a distance between a second inner edge and a second outer edge of the second surface.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.

Abstract: The invention relates to an electronic system for an accelerometer having a piezoelectric element and a first mechanical resonance frequency, comprising: a) a damping circuit configured to: —receive an acceleration signal from the piezoelectric element; —electronically dampen an amplitude of the first mechanical resonance frequency; and—generate a damped acceleration signal, b) an extender configured to: —receive the damped acceleration signal; —extend the frequency response; and—output an extended damped acceleration signal, wherein the extender is configured to have a first electronic anti-resonance frequency matching the damped first mechanical resonance frequency, and to have a frequency response between the first electronic anti-resonance frequency and a higher second frequency that is substantially opposite to a corresponding frequency response of the combination of the accelerometer and the damping circuit.

Abstract: An inner insert for a passage opening in an outer insert for an EUV radiation source is embodied in multiple parts and/or has a plurality of sections that extend in the longitudinal direction and have different internal diameters (di, da).

Abstract: In one example, an apparatus includes an extreme ultraviolet illumination source and an illuminator. The extreme ultraviolet illumination source is arranged to generate a beam of extreme ultraviolet illumination to pattern a resist layer on a substrate. The illuminator is arranged to direct the beam of extreme ultraviolet illumination onto a surface of a photomask. In one example, the illuminator includes a field facet mirror and a pupil facet mirror. The field facet mirror includes a first plurality of facets arranged to split the beam of extreme ultraviolet illumination into a plurality of light channels. The pupil facet mirror includes a second plurality of facets arranged to direct the plurality of light channels onto the surface of the photomask. The distribution of the second plurality of facets is denser at a periphery of the pupil facet mirror than at a center of the pupil facet mirror.

Abstract: A lithographic apparatus comprises a projection system comprising position sensors to measure a position of optical elements of the projection system. The positions sensors are referenced to a sensor frame. Damping actuators damp vibrations of the sensor frame. A control device drives the actuators and is configured to derive sensor frame damping force signals from at least one of the acceleration signals and the sensor frame position signals, derive an estimated line of sight error from the position signals, determine actuator drive signals from the sensor frame damping force signals and the estimated line of sight error, drive the actuators using the actuator drive signals to dampen the sensor frame and to at least partly compensate the estimated line of sight error.

Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.

Abstract: Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

Abstract: A method includes driving, while producing a burst of pulses at a pulse repetition rate, a spectral feature adjuster among a set of discrete states at a frequency correlated with the pulse repetition rate; and in between the production of the bursts of pulses (while no pulses are being produced), driving the spectral feature adjuster according to a driving signal defined by a set of parameters. Each discrete state corresponds to a discrete value of a spectral feature. The method includes ensuring that the spectral feature adjuster is in one of the discrete states that corresponds to a discrete value of the spectral feature of the amplified light beam when a pulse in the next burst is produced by adjusting one or more of: an instruction to the lithography exposure apparatus, the driving signal to the spectral feature adjuster, and/or the instruction to the optical source.

Abstract: Aspects of the present disclosure provide a method of aligning a wafer pattern. For example, the method can include providing a wafer having a reference pattern located below a front side of the wafer, and directing a light beam to the wafer. The method can further include identifying at least one of power and a wavelength of the light beam such that the light beam is capable of passing through the wafer and reaching the reference pattern, or identifying at least one of power and a wavelength of the light beam based on at least one of a material of the wafer and a depth of the reference pattern below the front side of the wafer. The method can further include using the light beam to image the reference pattern.