Abstract: Embodiments of the disclosure include methods of forming a film comprising conformally depositing a first film on a substrate; treating the first film with a first plasma to form a second film; treating the second film with a second plasma to form a third film; and selectively removing the first film, a portion of the second film, and the third film.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A light-emitting diode display including a substrate having a driving circuitry and a plurality of light emitting diode structures disposed on the substrate. Each light-emitting diode structure has a light emitting diode with a light emission zone having a planar portion, and a pigmentless light extraction layer of a UV-cured ink disposed over the light-emitting diode. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion, and the index of refraction of the light extraction layer decreases with distance from the planar portion.

Abstract: A semiconductor device manufacturing method includes: providing a semiconductor base; patterning the first medium layer to form a groove extending along the base in the base; forming a first auxiliary layer and a first metal layer sequentially in the groove, where the first metal layer is located on the side of the first auxiliary layer towards the first medium layer; thinning the base on the second surface of the base to expose the first auxiliary layer; removing the first auxiliary layer to form a first opening; and forming a second metal layer on the second surface of the base, where the second metal layer fills the first opening.

Abstract: An organic field-effect transistor and a fabrication method therefor, including: providing a gate; depositing polymer material onto the gate to form a dielectric layer; performing supercritical fluids treatment on the gate having the dielectric layer deposited; depositing organic semiconductor layer material on the dielectric layer having been processed, to form an organic semiconductor layer; depositing electrode layer material on the organic semiconductor layer and forming an electrode layer. The dielectric properties of the dielectric layer after adopting the supercritical fluids treatment have been significantly improved. While the hysteresis effect of the dielectric layers in the OFET devices has been basically eliminated, the sub-threshold slope of the OFET is also significantly reduced, the carrier mobility is effectively improved. Additionally, an OFET switching rate after being processed is improved, and, by connecting the LEDs in series, the switching rate of the LED is increased.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: In an aspect, a semiconductor device includes a gate. The gate includes a first portion that is located on one end of the gate, a second portion that is located on an opposite end of the gate from the first portion, and a third portion that is located in-between the first portion and the second portion. A first cap located on top of the first portion. A second cap located on top of the second portion. The third portion is capless. A gate contact is located on top of the third portion.

Abstract: A exemplary semiconductor device includes a first gate structure overlying a surface of the semiconductor body, the first gate structure being silicided. A second gate structure overlies the surface of the semiconductor body and not being silicided. An oxide layer overlies the second gate structure and extends toward the first gate structure. A silicon nitride region is laterally spaced from the second gate structure and overlies a portion of the oxide layer between the first gate structure and the second gate structure.

Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

Abstract: Present disclosure provides a semiconductor structure and a method for fabricating a semiconductor device. The semiconductor includes a transistor, a first metallization layer over the transistor, a phase change material over the first metallization layer, a second metallization layer over the phase change material, a heater between the first metallization layer and the second metallization layer and in contact with the phase change material, the heater including a heat insulation shell having a first heat conductivity, wherein the heat insulation shell includes a superlattice structure, and a heat conducting core contacting the heat insulation shell and having a second heat conductivity different from the first heat conductivity.

Abstract: A package substrate includes a substrate, an insulating protective layer and an interposer. The substrate has a first surface and a second surface opposing to the first surface. The substrate includes a plurality of first conductive pads embedded in the first surface. The insulating protective layer is disposed on the first surface of the substrate. The insulating protective layer has an opening for exposing the first conductive pads embedded in the first surface of the substrate. The interposer has a top surface and a bottom surface opposing to the top surface. The interposer includes a plurality of conductive vias and a plurality of second conductive pads located on the bottom surface. The interposer is located in a recess defined by the opening of the insulating protective layer and the first surface of the substrate. Each of the second conductive pads is electrically connected to corresponding first conductive pad.

Abstract: The present disclosure provides a nitrogen-containing compound, an electronic component comprising same, and an electronic device, and belongs to the technical field of organic electroluminescence. In the compound of the present disclosure, the nitrogen-containing compound is more suitable for being used as an electronic-type host material in the mixed host of the luminescence layer of an organic electroluminescent device, and is especially suitable for being used as an electronic-type host material in a green light device. When the nitrogen-containing compound of the present disclosure is used as a luminescence layer material of the organic electroluminescent device, the electron transporting performance of the device is effectively improved, the luminescence efficiency of the device is improved, and the service life of the device is prolonged.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes laminating a thermally decomposable organic material on a substrate by supplying a material gas into a container in which the substrate having a first recess and a second recess, which has a wider width than a width of the first recess, are formed, fluidizing the organic material laminated on the substrate by heating the substrate to a first temperature, and removing the organic material laminated in the second recess.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device of the present disclosure includes a first fin including a first source/drain region, a second fin including a second source/drain region, a first isolation layer disposed between the first source/drain region and the second source/drain region, and a second isolation layer disposed over the first isolation layer. A first portion of the first isolation layer is disposed on sidewalls of the first source/drain region and a second portion of the first isolation layer is disposed on sidewalls of the second source/drain region. A portion of the second isolation layer is disposed between the first portion and second portion of the first isolation layer.

Abstract: A package substrate includes a substrate, an interposer and an insulating protective layer. The substrate has a first surface and a second surface opposing to the first surface. The first surface includes a plurality of first conductive pads. The interposer is disposed on the first surface of the substrate such that the first conductive pads are partially covered by the interposer. The interposer includes a plurality of penetrating conductive vias electrically connected to the substrate. The insulating protective layer is disposed on the first surface of the substrate and surrounding the interposer. The insulating protective layer includes at least one penetrating conductive column, wherein a first width of the respective penetrating conductive column is greater than a second width of each of the penetrating conductive vias of the interposer.

Abstract: A substrate is provided with a dielectric, a metal layer embedded in the dielectric, and a metallic layer arranged on the metal layer between the substrate and the metal layer. A via hole is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer is applied in the via hole and removed from above a contact area of the metal layer, and the metallic layer is completely removed from the contact area. A metallization is applied in the via hole on the contact area.

Abstract: The present invention relates to a composition comprising a semiconducting light emitting nanoparticle.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain structure adjacent to the gate stack. The semiconductor device structure also includes a cap element over the source/drain structure. The cap element has a first top plane, and the source/drain structure has a second top plane. The first top plane of the cap element is wider than the second top plane of the source/drain structure. A surface orientation of the first top plane of the cap element and a surface orientation of a side surface of the cap element are different from each other. The surface orientation of the first top plane of the cap element is {311}.

Abstract: A display apparatus may include: a cover member comprising a hole area; a light shielding layer, an adhesive layer and a display layer that are disposed under the cover member; a first opening provided at the adhesive layer and the display layer corresponding to the hole area; a camera module inserted into the first opening; and an intermediate member disposed between the hole area and the camera module.

Abstract: A method of manufacturing a light emitting device includes: providing two light emitting elements disposed on a first surface of a light transmissive member; disposing a light guide member covering a part of the first surface of the light transmissive member, and lateral surfaces of the two light emitting elements; disposing a light reflective member covering the two light emitting elements, a second surface of the light transmissive member, and the light guide member, the second surface of the light transmissive member being opposite to the first surface; and cutting the light reflective member and/or the light transmissive member between the two light emitting elements.