Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition, used for forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 ?m or more, and for being exposed to actinic rays having a wavelength of 200 to 300 nm or radiation, in which the transmittance, with respect to light at a wavelength of 248 nm, of an actinic ray-sensitive or radiation-sensitive film having a film thickness of 12 ?m, which is formed using the actinic ray-sensitive or radiation-sensitive resin composition, is 5% or more, and a pattern having an excellent sensitivity as well as an excellent cross-sectional shape can be formed by the actinic ray-sensitive or radiation-sensitive resin composition in a case where an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 ?m or more is exposed to light at a wavelength of 200 to 300 nm.

Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: There is provided a composition for coating a stepped substrate that has high filling properties of a pattern, and is capable of forming a coating film that does not cause degassing and heat shrinkage, and is used to form a coating film having flattening properties on the substrate. The composition for coating a stepped substrate includes a compound (C) having in the molecule a partial structure of Formula (1) (where R1 and R2 are each independently a hydrogen atom, a C1-10 alkyl group, or a C6-40 aryl group; five R3s are each independently a hydrogen atom, a hydroxy group, a C1-10 alkoxy group, a C1-10 alkyl group, a nitro group, or a halogen atom; and * is a bond site to the compound); and a solvent.

Abstract: Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

Abstract: The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: A compound represented by the following formula (1) and a method for producing the same, and a composition, a composition for optical component formation, a film forming composition for lithography, a resist composition, a method for forming a resist pattern, a radiation-sensitive composition, a method for producing an amorphous film, an underlayer film forming material for lithography, a composition for underlayer film formation for lithography, a method for producing an underlayer film for lithography, a resist pattern formation method, a circuit pattern formation method, and a purification method.

Abstract: This invention discloses a fluorene polyfunctional photoinitiator as represented by general formula (I), a photosensitive resin composition containing the same, the preparation of the same, and uses of the two. This compound has the advantages of simple synthesis, low cost, and good solubility, and has good application effects in photocurable compositions. Compared with conventional small molecule photoinitiators, it is not only excellent in photoinitiation activity, but also has the advantages such as low mobility, low odor, and yellowing resistance. The composition has high photosensitivity and good developability, high resolution, and excellent adaptation to a substrate, and is very suitable for producing a black matrix having high light-shielding property, a high-precision and high quality color filter and a liquid crystal display device, and can also be used in optical spacers and ribs, photoresist, wet film, dry film and so on.

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

Abstract: A method for producing a patterned silicone layer; said method comprising steps of: (a) depositing on a substrate a composition comprising: (i) a polysiloxane comprising alkenyl groups, (ii) a silane crosslinker comprising silicon-hydrogen bonds, (iii) a hydrosilylation catalyst, and (iv) a photolatent amine generator, to form an uncured resin; (b) exposing the uncured resin to ultraviolet light or electron beam irradiation through a mask to produce a patterned resin; (c) heating the patterned resin; and (e) removing at least a part of the uncured portion of the patterned resin to produce a final patterned silicone layer.

Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) having a glass transition temperature of 155° C. or higher, a compound (B) having a glass transition temperature of 150° C. or lower, and a solvent (C). A solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 20% by mass or more. A softening point of the resist pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition is from 130° C. to 170° C.

Abstract: The present invention is a photosensitive resin composition to be used in an etching process in which an etching treatment is conducted with an etching solution containing hydrofluoric acid or ammonium fluoride. The photosensitive resin composition comprises at least (A) an acid-modified epoxy acrylate, (B) a photopolymerization initiator, (C) a blocked isocyanate compound, and (D) a filler. The etching process involves forming a photosensitive resin layer comprising said photosensitive resin composition, on at least one surface of a substrate; exposing and then developing the photosensitive resin layer; baking the photosensitive layer; and conducting an etching treatment with an etching solution containing hydrofluoric acid or ammonium fluoride.

Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.

Abstract: A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including a polymer compound (A1) which has a constitutional unit (a0) derived from a compound represented by Formula (a0-1) and a constitutional unit (a10) derived from a compound represented by Formula (a10-1) and does not have a constitutional unit represented by Formula (1). In the formulas, Rax0 and Rax1 represent a polymerizable group-containing group; Wax0 and Wax1 represent an (nax0+1)-valent or (nax1+1)-valent aromatic hydrocarbon group; nax0 and nax1 represent an integer of 1 to 3; and Z2 represents Fe, Co, Ni, Cr, or Ru.

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a hydrophobic resin (B), and a resin (C) having an aromatic ring, as well as a film, a mask blank, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided.

Abstract: Provided are a radiation-sensitive resin composition having good sensitivity and excellent temporal stability of the sensitivity, a cured film, a pattern forming method, a solid-state imaging device, and an image display device. The radiation-sensitive resin composition includes a resin, a polymerizable compound having an ethylenically unsaturated bond, a photopolymerization initiator, an organic solvent, and water, in which the photopolymerization initiator includes an oxime ester compound having at least one group selected from a branched alkyl group and a cyclic alkyl group, and the content of water is 0.1% to 2% by mass with respect to the mass of the radiation-sensitive resin composition.

Abstract: A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02).

Abstract: Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a colorant which are useful for forming films that can be patterned to create structures for color filters and microlens having applications in a variety of microelectronic devices, optoelectronic devices and displays, such as for example image sensors. The compositions of this invention can be tailored to form positive tone images for forming an array of images, which can be thermally transformed into an array of microlens. The images thus formed can then be used in color filter applications.

Abstract: A photoresist composition comprising a resin which comprises a structural unit represented by the formula (I): and a salt represented by the formula (B1):