Abstract: There are provided a phenolic-hydroxyl-group-containing novolac resin and resist film that are excellent in developability, heat resistance, and conformability to substrates. The phenolic-hydroxyl-group-containing novolac resin is a polycondensate of which the essential reactive components are a phenolic-hydroxyl-group-containing compound (A) represented by Structural Formula (1) [where Ar is a structural part represented by Structural Formula (Ar-1) or (Ar-2), a phenolic-hydroxyl-group-containing compound (B) represented by Structural Formula (2) [where R3 is an aliphatic hydrocarbon group having 4 to 20 carbon atoms, and j is an integer from 1 to 3], and an aldehyde compound (C).

Abstract: A photoresist composition comprising an acid generator and a resin which comprises one or more structural units (a1) derived from a monomer (a1) having an acid-liable group, all of monomers (a1) showing a distance of Hansen solubility parameters between the monomer (a1) and butyl acetate in the range of 3 to 5, the distance being calculated from formula (1): R=(4×(?dm?15.8)2+(?pm?3.7)2+(?hm?6.3)2)1/2??(1) in which ?dm represents a dispersion parameter of a monomer, ?pm represents a polarity parameter of a monomer, ?hm represents a hydrogen bonding parameter of a monomer, and R represents a distance of Hansen solubility parameters, and at least one of the monomers (a1) showing a difference of R between the monomer (a1) and a compound in which an acid is removed from the monomer (a1) in the range of not less than 5.

Abstract: A compound represented by the following formula (1): wherein R1 is a 2n-valent group having 1 to 60 carbon atoms; R2 to R5 are each independently a linear, branched, or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a group in which a hydrogen atom of a hydroxy group is replaced with a vinylphenylmethyl group, a group selected from the group consisting of groups represented by the following formula (A), a thiol group, or a hydroxy group, wherein at least one of the R2 to the R5 is a group selected from a group represented by the formula (A); m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each indepen

Abstract: A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern.

Abstract: Provided are a resist composition capable of forming a pattern having excellent pattern collapse performance, particularly in the formation of an ultrafine pattern (for example, a pattern with a line width 50 nm or less) using the resist composition containing a resin (A) having a repeating unit (a) having an aromatic ring group and a repeating unit (b) having a silicon atom in a side chain, as well as a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the resist composition.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: A photosensitive resin composition using a polyimide precursor composition, a cured film, a method for producing a cured film, a semiconductor device, and a method for producing a polyimide precursor composition are provided. In the polyimide precursor composition, the molar ratio of repeating units represented by General Formula (1-2) among structural isomers of the polyimide precursor is 60% to 90% by mole. In General Formula (1-2), A1 and A2 each independently represents an oxygen atom or NH, R111 and R112 each independently represents a single bond or a divalent organic group, and R113 and R114 each independently represents a hydrogen atom or a monovalent organic group.

Abstract: This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.

Abstract: A photosensitive resin composition capable of forming a cured film with satisfactory adhesion to substrates and excellent transparency, a polyamide resin which is used in the photosensitive resin composition, a method for producing the polyamide resin, a compound which is used as a raw material of the polyamide resin, a method for producing the compound, a method for producing a cured film using the photosensitive resin composition, and a cured film which is obtained by curing the photosensitive resin composition. The photosensitive resin composition including a resin and a photopolymerization initiator. The resin is a polyamide resin including a structural unit, which includes a specific saturated alicyclic skeleton, and at least one carboxy group esterified by a unit containing a polymerizable group of a predetermined structure.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.

Abstract: A low dielectric constant (Dk) and dissipation factor (Df) of solder resistant mask composition comprising (A) a photopolymerizable prepolymer of formula (1); (B) a photopolymerizable vinyl monomer; (C) an epoxy compound; (D) a photopolymerization initiator; (E) an inorganic filler; (F) a catalyst; and (G) an organic solvent. The low dielectric constant (Dk) and dissipation factor (Df) of solder resistant mask composition has excellent photo and thermocurability, and high developability resolution with an alkaline aqueous solution, wherein the dielectric constant is below 3.20 (1 GHz), and the dissipation factor is less than 0.

Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (d1) in which Rd01 and Rd02 each independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; or Rd01 and Rd02 may be mutually bonded to form a condensed ring; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.

Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

Abstract: A chemically amplified positive-type photosensitive resin composition capable of suppressing the occurrence of “footing” in which the width of the bottom (the side proximate to the surface of a support) becomes narrower than that of the top (the side proximate to the surface of a resist layer) in a nonresist section and the occurrence of development residue, when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the composition; a method for manufacturing a substrate with a template using the composition; and a method for manufacturing a plated article using the substrate with the template. A mercapto compound having a specific structure is contained in the composition including an acid generator that generates an acid when irradiated with an active ray or radiation and a resin whose solubility in alkali increases under the action of acid.

Abstract: A photosensitive resin composition using a polyimide precursor composition, a cured film, a method for producing a cured film, a semiconductor device, and a method for producing a polyimide precursor composition are provided. In the polyimide precursor composition, the molar ratio of repeating units represented by General Formula (1-2) among structural isomers of the polyimide precursor is 60% to 90% by mole. In General Formula (1-2), A1 and A2 each independently represents an oxygen atom or NH, R111 and R112 each independently represents a single bond or a divalent organic group, and R113 and R114 each independently represents a hydrogen atom or a monovalent organic group.