Abstract: Provided is a cured film having high chemical resistance, high elongation, and high adhesion to metal copper. A cured film formed by curing a photosensitive resin composition containing a polybenzoxazole precursor, in which a rate at which the polybenzoxazole precursor is cyclized into polybenzoxazole is not less than 10% and not more than 60%.

Abstract: Disclosed herein are a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition introduces a siloxane polymer containing a fluorine atom which has strong water-repellency into a composition including a common siloxane polymer and an epoxy compound, and fluorine groups may be present in the whole region of the cured film so that the water-repellency due to a fluorine component may be maintained even after removing the surface of the cured film is removed via a dry etching process. As a result, the resistance (chemical resistance) to chemicals used in a post-processing can be maximizes to provide a cured film having excellent stability.

Abstract: Provided is a positive photosensitive resin composition having high sensitivity, high definition, and high adhesiveness and being capable of maintaining blackness and high light-blocking properties, even after a high-temperature curing step, e.g., at 250° C. This positive photosensitive resin composition contains: a binder resin (A); a quinonediazide compound (B); and at least one type of black dye (C) selected from black dyes specified by the color indexes of solvent black 27-47. The black dye (C) is ideally specified by the color index of solvent black 27, 29, or 34. This composition is capable of being suitably used in positive radiation lithography and can be used to form organic EL element partitions and insulating films.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.

Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.

Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

Abstract: A photoacid generator compound having formula (I): wherein, in formula (I), groups and variables are the same as described in the specification.

Abstract: A radiation-sensitive resin composition includes a first compound represented by formula (1), a first polymer comprising an acid-labile group, and a radiation-sensitive acid generator other than the first compound. The radiation-sensitive acid generator includes an onium salt compound. In the formula (1), n is 2 or 3; m is 1 or 2; Y+ represents a monovalent radiation-sensitive onium cation; and L represents a single bond or an organic group having a valency of n. L includes linking moieties each linking two of the carboxylate groups in formula (1). Number of atom(s) included in a linking moiety having a minimum number of bonds among the linking moieties is 0 to 10. In a case where L represents a single bond, n is 2, and in a case where n is 2, m is 1.

Abstract: A polymer of a polyimide precursor which includes a structural unit represented by the following general formula (7), where X1 represents a tetravalent organic group, X2 represents a divalent organic group, and R1 represents a group represented by the following general formula (2), where the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1.

Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

Abstract: A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3): wherein R1s are each independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protecting group, R3 is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R4 is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer's content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.

Abstract: The present invention relates to a photo-curable and heat-curable resin composition including: an acid-modified oligomer having a photo-curable functional group having an acrylate group or an unsaturated double bond, and a carboxyl group in the molecule; a photopolymerizable monomer having at least two photo-curable unsaturated functional groups; a heat-curable binder having a heat-curable functional group; a plate-like inorganic filler having an E-modulus of 90 to 120 (Gpa); a dispersant; and a photo-initiator, and a dry film solder resist prepared therefrom.

Abstract: An object of the present invention is to provide a polymer used for a resist composition having high absorption efficiency for a particle beam or an electromagnetic wave, and excellence in sensitivity, resolution and pattern performance characteristics, and provide a resist composition containing the polymer and a method of manufacturing a device using thereof. The polymer comprises: a unit A; and a unit B, wherein the unit A has an onium salt structure and generates a first radical by irradiation with a particle beam or an electromagnetic wave, the unit B has a radical generating structure containing at least one multiple bond which is between a carbon atom and a carbon atom or between a carbon atom and a heteroatom, and generates a second radical by irradiation with a particle beam or an electromagnetic wave, and the multiple bond is not one contained in a benzenoid aromatic.

Abstract: A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.

Abstract: Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.

Abstract: The present invention makes it possible to provide an optical material composition containing an episulfide compound (A), a polythiol compound (B), and a photochromic compound (C). The episulfide compound (A) is preferably a compound represented by formula (1), and the polythiol compound (B) is preferably a compound represented by formula (6). (In formula (1), m represents an integer of 0 to 4, and n represents an integer of 0 to 2.) (In formula (6), n represents an integer of 4 to 20, and R1 and R2 may be the same or different and represent H, SH, C1-10 alkyl groups, or C1-10 alkylthiol groups.