Abstract: A vehicle system includes a processing device programmed to receive a first user input signal and activate a car wash mode in response to receiving the first user input signal. Activating the car wash mode includes temporarily disabling at least one vehicle safety system. A method includes receiving the first user input signal, activating a vehicle car wash mode in response to receiving the first user input signal, receiving a second user input signal, and deactivating the car wash mode in response to receiving the second user input signal.

Abstract: A flow assurance system and method includes procedures to query current valve states and determine the likely effect of new valve states on product flow when using an automated pig launcher. The system and method allows for modulating the mainline bypass valve, kicker valve, and isolation valve between fully opened and fully closed states; prevents flow blocking of the pipeline during this modulation; enables new and different, as well as a broader range of, pig launching options for an automatic pig launcher; and integrates with existing automatic pig launchers.

Abstract: Methods and apparatus for in-situ cleaning of substrate processing chambers are provided herein. A substrate processing chamber may include a chamber body enclosing an inner volume; a chamber lid removably coupled to the chamber body and including a first flow channel fluidly coupled to the inner volume to selectively open or seal the inner volume to or from a first outlet; a chamber floor including a second flow channel fluidly coupled to the inner volume to selectively open or seal the inner volume to or from a first inlet; and a pump ring disposed in and in fluid communication with the inner volume, the pump ring comprising an upper chamber fluidly coupled to a lower chamber, and a second outlet fluidly coupled to the lower chamber to selectively open or seal the inner volume to or from the second outlet.

Abstract: A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.

Abstract: The inventive substrate treatment apparatus includes: a rotative treatment control unit which controls a first chemical liquid supplying unit and a second chemical liquid supplying unit to perform a first chemical liquid supplying step of supplying a first chemical liquid to a substrate rotated by a substrate holding and rotating mechanism and a second chemical liquid supplying step of supplying a second chemical liquid to the substrate rotated by the substrate holding and rotating mechanism after the first chemical liquid supplying step; and a cleaning control unit which controls the cleaning liquid supplying unit to spout the cleaning liquid from the cleaning liquid outlet port to supply the cleaning liquid to the cup inner wall and/or the base wall surface before start of the second chemical liquid supplying step after end of the first chemical liquid supplying step, and/or during and/or after the second chemical liquid supplying step.

Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer having a first hard mask layer and a second hard mask layer successively formed thereon and then patterning the second hard mask layer. Thereafter, an etching process is performed to pattern the first hard mask layer by using the patterned second hard mask layer as a mask, and the etching process is performed with a power of about 1000 W. Next, the material layer is patterned by using the patterned first hard mask layer as a mask.

Abstract: A method of removing a ceramic thermal barrier coating system (18). Laser energy (20) is applied to the thermal barrier coating system in the presence of a flux material (22) in order to form a melt (26). Upon removal of the energy, the melt solidifies to from a layer of slag (28) which is more loosely adhered to the underlying metallic substrate (12) than the original thermal barrier coating system. The slag is then broken and released from the substrate with a mechanical process such as grit blasting (30). Sufficient energy may be applied to melt an entire depth of the coating system along with a thin layer (34) of the substrate, thereby forming a refreshed surface (36) on the substrate upon resolidification.

Abstract: A method for treating pipe string sections being in a set-back and being arranged in a vertical position comprises arranging a remote-controllable manipulator at least at one of the threaded portions of the pipe string sections. In addition, the method comprises providing the remote-controllable manipulator with a tool. The tool is arranged to at least clean or lubricate said threaded portion. Further, the method comprises moving the tool to a threaded portion which is to be treated and at least clean or lubricate the threaded portion.

Abstract: A washing plant (10) comprises a battery (12) of washing and heat-disinfection machines (14, 16, 18) disposed along an alignment axis (X), able to operate in parallel with respect to each other in order to effect the washing and heat-disinfection, at least a translator slider (20) mobile in an automatic manner parallel to the alignment axis (X) in a front position to said battery (12), which receives the objects to be washed and both transports them in correspondence to the entrance of one of the machines (14, 16, 18) selected on each occasion depending on the washing program set or depending on availability, and moves them inside the desired machine (14, 16, 18) in a direction of feed (F) substantially perpendicular to said alignment axis (X), transport means (24) being provided to direct the objects to be washed toward the translator slider (20) operating in a direction of transport (Y) substantially parallel to said alignment axis (X).

Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.

Abstract: According to the present disclosure, a method for cleaning the processing chamber of a flexible substrate processing apparatus without breaking the vacuum in the processing chamber is provided. The method for cleaning the processing chamber includes guiding a sacrificial foil into the processing chamber; initiating a first pump process in the processing chamber; plasma cleaning the processing chamber while the sacrificial foil is provided in the processing chamber; initiating a second pump process in the processing chamber; and guiding a flexible substrate into the processing chamber.

Abstract: The cleaning apparatus includes a reservoir tank for reserving a cleaning fluid, a pressure-feed unit for feeding the cleaning fluid while pressurizing the cleaning fluid above the atmospheric pressure, a heating unit for heating the cleaning fluid pressure-fed from the pressure-feed unit above an atmospheric pressure boiling point of the cleaning fluid, a gas supply unit for supplying a gas and an injection unit connected to the heating unit and the gas supply unit for injecting the cleaning fluid pressurized by the pressure-feeding unit and heated by the heating unit as a pressurized superheated cleaning fluid and the gas supplied from the gas supply unit to the member at the same time.

Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers?1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Abstract: A brush core for engaging and rotating a generally cylindrical brush having a hollow bore is provided. The brush core includes, but is not limited to, a body section forming an outer surface for engaging the hollow bore of the cylindrical brush. The outer surface of the body section includes three or more sides.

Abstract: A water-soluble cutting fluid for slicing silicon ingots is characterized in that it includes a monoprotic or diprotic aliphatic carboxylic acid (A) having a carbon number (including the carbon in the carbonyl group) of 4˜10, and either a polyprotic organic acid (B) with ?pKa of 0.9˜2.3 as defined by the following formula (1) or a salt (BA) of said organic acid (B) as essential components: ?pKa=(pKa2)?(pKa1)??(1) wherein the dissociation stage, at which the organic acid (B) denoted as n-protic acid HnA, becomes Hn-1A+H+ is numbered 1 with an acid dissociation constant expressed as pKa1, and the dissociation stage at which the organic acid (B) becomes Hn-2A+H+ is numbered as 2 with an acid dissociation constant expressed as pKa2.

Abstract: The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.

Abstract: The invention relates to a method for cleaning a turbo-machine stage (100) consisting of at least one of the following steps: a cleaning nozzle (1) is introduced into an opening of a turbo-machine, in particular into an inspection opening (220); and the blade (100) of the stage is acted upon by solid particles, said particles subliming at the blade temperature, in particular into dry ice particles.

Abstract: A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.

Abstract: An aspect of the present disclosure, there is provided a method for reproducing a template. The template includes a transfer surface and a release layer. The transfer surface has a concavoconvex pattern. The release layer includes an inorganic functional group and an organic functional group, both being bonded to the transfer surface. The method for reproducing the template includes the following two steps: removing the organic functional group by oxidizing and decomposing the organic functional group included in the release layer; and removing the inorganic functional group; and forming the release layer by coupling a silane coupling agent with the transfer surface.

Abstract: Disclosed are a device for automatically cleaning printed circuit board and a method using the same. The device includes: a printed circuit board (PCB) tray, a transferring unit, an elevator unit, a cleaning unit and a unloading deck; the elevator unit includes a horizontal part and a vertical part; when the elevator unit is descended to the lowest position, an upper surface of the transferring unit is at a same horizontal position with an upper surface of the horizontal part of the elevator unit; the elevator unit is located below the cleaning unit, and the unloading deck is located above the transferring unit. The invention can not only save manpower, but also achieve standardization of the cleaning process and improve working efficiency.