Abstract: A liquid crystal display device includes a TFT substrate and a counter substrate with liquid crystal sandwiched therebetween. The TFT substrate has scanning lines 10 extending in a first direction and arrayed in a second direction and video signal lines 20 extending in the second direction and arrayed in the first direction. The TFT substrate has a display area 500 in which TFT pixels are arrayed in a matrix pattern, and a frame area 600 surrounding the display area. In the frame area 600, common bus wires 521 are formed in the same layer and with the same material as the video signal lines 20 and are impressed with a common voltage. Dummy TFTs are formed in a layer under the common bus wires 521. The scanning lines 10, extending over the frame area 600, are divided outside the display area and are interconnected by bridging wires 170.

Abstract: An organic light emitting display device includes a first substrate, a pixel structure, a second substrate, a reflective member, and a light transmitting member. The first substrate includes a plurality of pixel regions. Each of the pixel regions has sub-pixel regions and a reflective region surrounding the sub-pixel regions. The pixel structure is disposed in each of the sub-pixel regions on the first substrate. The second substrate is disposed on the pixel structure. The reflective member has an opening disposed in each of the sub-pixel regions, and is disposed in the reflective region of the second substrate. The light transmitting member covers the opening of the reflective member and partially overlaps the reflective member. The light transmitting member blocks ultraviolet rays and transmits a predetermined light.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a substrate; a display area on the substrate and configured to display an image; a pad portion on at least one edge of the substrate, the pad portion including at least one sink portion; an anisotropic conductive film on the pad portion and filling the at least one sink portion, the anisotropic conductive film spaced apart from an end of the substrate; and a flexible printed circuit board on the anisotropic conductive film and electrically connected to the pad portion.

Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductor over the conductive pad, a polymeric material over the semiconductor substrate and surrounding the conductor, and a seed layer between the polymeric material and the conductor. A top surface of the conductor, a top surface of the polymeric material and a top surface of the seed layer are substantially coplanar.

Abstract: Implementations of a clip may include a die attach portion including at least one protrusion extending from the die attach portion and a lead frame alignment portion including at least one alignment feature. The at least one alignment feature may be configured to couple into at least one hole in a lead frame thereby aligning the clip with the lead frame. The at least one protrusion may be configured to couple into at least one recess in the die.

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract: A method for metallization during fabrication of an Integrated Circuit (IC). The IC includes a semiconductor wafer having a back surface and a front surface. The method includes etching a via hole through the semiconductor wafer. After this, a seed metal layer is deposited on the back surface of the semiconductor wafer. Thereafter, a photoresist layer is deposited on the back surface of the semiconductor wafer such that the via hole remains uncovered. After depositing the photoresist layer, a metal layer is formed along the walls of the via hole to electrically connect the back surface and the front surface of the semiconductor wafer. Finally, the photoresist layer is removed subsequent to forming the metal layer.

Abstract: An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.

Abstract: A light emitting diode comprises a light emitting diode chip and a packaging layer. The light emitting diode chip comprises a N-semiconductor layer, a light active layer, and a P-semiconductor layer arranged from a bottom to a top in that sequence, a first electrode, and a second electrode. The first electrode is formed on the P-semiconductor layer. The second electrode is formed on the N-semiconductor layer. The packaging layer covers the light emitting diode chip, and exposes the N-semiconductor layer, the first electrode, and the second electrode. The packaging layer has a through hole separated from a periphery of the light emitting diode chip. A conductive substrate fills the through hole. A first conductive layer is electrically connected to the first electrode and the conductive substrate. The disclosure also provides a method for manufacturing a light emitting diode.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: An organic light-emitting diode (OLED) display device, a manufacturing method thereof and a display device are disclosed. The OLED device includes: a first substrate; an OLED disposed on the first substrate; at least one encapsulation layer disposed on the OLED; a bonding layer disposed on the at least one encapsulation layer; and a second substrate disposed on the bonding layer. A concave-convex structure is provided on at least one surface of the at least one encapsulation layer. The OLED display device can reduce the damage of moisture and oxygen on the OLED device and improve the moisture and oxygen resistance of the OLED device.

Abstract: An organic light emitting device includes four sub-organic light emitting devices. The first device includes a first anode, a first common light emitting portion, and a first sub-light emitting portion. The second device includes a second anode, a second common light emitting portion, a first auxiliary layer, and a second sub-light emitting portion. The third device includes a third anode and a third common light emitting portion. The fourth device includes a fourth anode, a fourth common light emitting portion, and a light emitting layer emitting a first light. The first and second sub-light emitting portions have an integral structure and emit second light. The first, second, third, and fourth common light emitting portions have an integral structure and emit third light having a wavelength longer than a wavelength of at least one of the first or second lights.

Abstract: Described herein are devices and methods related to lighting systems that are color tunable and have a long lifetime. In certain embodiments, the device comprises two independently controlled phosphorescent OLED lighting panels coupled together in one package to emit light in one direction. In certain embodiment, aspects of the device are tunable, such as RGB color, color temperature, and luminance.

Abstract: The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (HBTs) that have different emitter ballast resistances. The disclosed semiconductor device includes a substrate, a first HBT and a second HBT formed over the substrate. The first HBT includes a first collector, a first base over the first collector, a first emitter over the first base, and a first cap structure over the first emitter. The second HBT includes a second collector, a second base over the second collector, a second emitter over the second base, and a second cap structure over the second emitter. Herein, the first cap structure is different from the second cap structure, such that a first emitter ballast resistance from the first cap structure is at least 1.5 times greater than a second emitter ballast resistance from the second cap structure.

Abstract: A system and method is provided that facilitates controlling and monitoring environmental conditions in buildings. The system may include at least one rack including: a plurality of slidable field panels mounted in a housing. The slidable field panels may be in side-by-side relation in a horizontal direction and may be configured to independently slide at least partially out of a front side opening of the housing via a plurality of slides. The slidable field panels may include a plurality of components mounted to vertical walls thereof, including: transformers and building control modules. The rack may also include a terminal panel including a plurality of connection terminals facing a back side opening of the housing. The connection terminals may be respectively wired to respective terminals of the transformers and building control.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator over the first conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the first conductor, and a side surface of the third insulator; a fifth insulator in contact with a top surface of the oxide and a side surface of the fourth insulator; and a second conductor in contact with the top surface of the oxide and the fifth insulator. The level of the top surface of the fourth insulator is higher than the level of the top surface of the fifth insulator.

Abstract: Provided are a method for manufacturing an integrated substrate for an organic light emitting diode, an organic light emitting diode, and a method for manufacturing an organic light emitting diode, wherein the method for manufacturing an organic light emitting diode may include forming a sacrificial layer on a release substrate, forming a first electrode on the sacrificial layer, forming on the first electrode an auxiliary electrode pattern having an opening, forming a buffer layer on the auxiliary electrode pattern and in the opening, providing a substrate on the buffer layer, removing the release substrate and the sacrificial layer to expose a first surface of the first electrode, and laminating an organic light emitting layer and a second electrode on the first surface of the first electrode.

Abstract: Adhesive compounds and methods contain at least one reactive resin, at least one elastomer, at least one polar photoinitiator and, optionally, a non-aqueous solvent. The adhesive compounds and method further containing a non-ionic surfactant for reducing the yellowness index of the cured adhesive compound, having a reduced yellowing tendency after the crosslinking step. The adhesive compound may be preferably a pressure-sensitive adhesive compound and the elastomer may be preferably a non-polar elastomer.

Abstract: A display device and a method of manufacturing a display device are provided. A manufacturing method of a display apparatus includes forming a display module including a first area and including a display panel including lower and upper surfaces opposite each other, a first film under the lower surface of the display panel, a second film on the upper surface of the display panel, and an adhesive layer between the lower surface of the display panel and the first film; weakening an adhesive force of a first adhesive portion of the adhesive layer in the first area to be weaker than an adhesive force of a second adhesive portion of the adhesive layer outside the first area; cutting the first film and the adhesive layer; and removing a portion of the first film and the first adhesive portion from the first area.

Abstract: An organic light-emitting apparatus includes a substrate including an active area, a dead area, and a pad area, a display unit disposed in the active area and including thin-film transistors, pixel electrodes, and a portion of a common electrode, a first voltage supply unit disposed on the dead and pad areas and electrically contacting the common electrode, a second voltage supply unit overlapping the common electrode, and spaced apart and electrically insulated therefrom, and an insulating layer disposed between the common electrode and the second voltage supply unit, in which a portion of the common electrode that overlaps the first voltage supply unit is closer to the pad area than that of a portion of the common electrode that overlaps the second voltage supply unit, and an end portion of the insulating layer contacts an end portion of the first voltage supply unit adjacent to the active area.