Abstract: A display device includes a substrate; a plurality of color filters on the substrate, a common electrode covering the plurality of color filters, a white emission layer covering the common electrode, a plurality of pixel electrodes on the white emission layer and a plurality of pixel switching elements on the plurality of pixel electrodes and connected to the plurality of pixel electrodes, wherein the white emission layer includes a plurality of quantum dots.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first (2PA) and second (2PB) phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit (52, 53b, 53c) arranged at an upper side of a semiconductor substrate (12) and a second photoelectric conversion unit (42, 43) arranged within the semiconductor substrate. The first photoelectric conversion film (52) may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: An organic light-emitting device having light-emitting portions arranged in two directions along a substrate main surface. Each light-emitting portion, in a first direction intersecting the substrate main surface, includes, disposed via a first insulating layer, a first electrode, an organic laminate, and a second electrode. In a second direction being one of the two directions along the substrate main surface, a non-light-emitting portion is present between adjacent light-emitting portions. The first electrodes of the adjacent light-emitting portions extend into the non-light-emitting portion. A second insulating layer is present between portions of the first electrodes in the non-light-emitting portion, and covers the portions of the first electrodes in the non-light-emitting portion. A height of the second insulating layer from the substrate main surface is lower than a height, from the substrate main surface, of upper surfaces of portions of the first electrodes in the light-emitting portions.

Abstract: An object of the present invention is to provide an organic EL panel having a display pattern that allows low power consumption, high emission uniformity, and high emission luminance ratio and makes it possible to reduce the manufacturing process time and provide high productivity, a method for manufacturing the organic EL panel, an organic EL module, and an information device. The organic EL panel of the present invention includes an organic EL device including an organic EL element having a pattern A including at least a light-emitting part and a non-light-emitting part; and at least one auxiliary member, wherein the organic EL element has an emission luminance ratio of the light-emitting part to the non-light-emitting part of 5:1 to 50:1, and the at least one auxiliary member has a pattern B being geometrically similar to the pattern A and including a light-transmitting part and a light-blocking part.

Abstract: Provided are a semiconductor device. The semiconductor device includes an SRAM cell including a first pull-up transistor, a first pull-down transistor and a first pass transistor formed on a substrate, a first read buffer transistor connected to gate terminals of the first pull-up transistor and the first pull-down transistor, and a second read buffer transistor which shares a drain terminal with the first read buffer transistor, wherein the first read buffer transistor includes a first channel pattern extending in a first direction vertical to an upper surface of the substrate, a first gate electrode which covers a part of the first channel pattern, and a first drain pattern which does not contact the first gate electrode, and which extends in the first direction, and which is connected to the first channel pattern.

Abstract: Organic light-emitting device including light-emitting portions disposed in two intersecting directions along a substrate main surface. Each light-emitting portion, in a first direction intersecting the substrate main surface, includes first and second electrodes, a charge transport layer, and an organic light-emitting layer, and is partitioned from adjacent light-emitting portions by first banks extending in a third direction being one of the two directions and second banks extending in a second direction being the other of the two directions. Each area between adjacent first banks is covered by the charge transport and organic light-emitting layers extending continuously across the area over the second banks. The first and second banks contain insulating material, a thickness of the second banks is no greater than 20% a height of the first banks, and the second banks have a surface portion contact angle smaller than that of the first banks.

Abstract: Disclosed is an organic light-emitting diode display panel, which may effectively reduce or prevent spreading of the peeling of an organic light-emitting layer by using a bar-shaped reversed spacer, regardless of the direction in which the organic layer peels off. The organic light-emitting diode display panel may include a reversed spacer, which is disposed on a bank insulation layer having an opening and includes a reversed-trapezoidal cross section, the reversed spacer having a bar shape when viewed from the front side of the organic light-emitting diode display panel.

Abstract: An organic light-emitting display apparatus includes an organic light-emitting display panel having a display area including a plurality of pixel areas and a non-display area adjacent the display area; and a light sensing unit. The organic light-emitting display panel includes a first substrate including an organic light-emitting device on a first base substrate and a second substrate including a black matrix between the plurality of pixel areas on a surface of a second base substrate facing the first substrate and a reflective pattern formed on the black matrix. The light sensing unit is at one side of the organic light-emitting display panel.

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

Abstract: An organic light emitting element is disclosed. The organic light emitting element includes: a first electrode; a multi-sub-layered organic emission layer on the first electrode; a second electrode on the multi-sub-layered organic emission layer; and a blend barrier layer between two sub-layers of the multi-sub-layered organic emission layer, which are adjacent to each other and includes first solvents, and configured to include a second solvent having an opposite polarity to that of the first solvent. Such an organic light emitting element can have enhanced light emission efficiency and extended life span.

Abstract: A display device includes a substrate having a plurality of transmissive regions aligned in a first direction and a second direction, a plurality of first wiring lines on the substrate extending in the first direction, a plurality of second wiring lines on the substrate extending in the second direction, and a plurality of light emitting sections disposed on the substrate. Each of the transmissive regions is surrounded by the first and second wiring lines. The light emitting sections include a first light emitting section and a second light emitting section. At least part of the first light emitting section is located in a region that is adjacent to the transmissive regions and overlap one of the first wiring lines. At least part of the second light emitting section is located in a region that is adjacent to the transmissive regions and overlap one of the second wiring lines.

Abstract: An organic light emitting device includes a first light-emitting layer between an anode and a cathode, the first light-emitting layer including a first light-emitting part and a second light-emitting part, a second light-emitting layer spaced apart from the first light-emitting layer and including a third light-emitting part and a fourth light-emitting part, the third light-emitting part overlapping the first light-emitting part and not overlapping the second light-emitting part, and the fourth light-emitting part not overlapping either of the first light-emitting part and the second light-emitting part, an intermediate layer between the first light-emitting layer and the second light-emitting layer, a hole transport region to inject/transport a hole into the first light-emitting part, the second light-emitting part, and the fourth light-emitting part, and an electron transport region to inject/transport an electron into the second light-emitting part, the third light-emitting part, and the fourth light-emitt

Abstract: Various embodiments include methods and integrated circuit (IC) structures. In some cases, an IC can include: a substrate; a deep trench within the substrate; a buried oxide (BOX) layer adjacent the deep trench; a first fin structure over the deep trench; a second fin structure over the BOX layer; an ONO layer over the first fin structure; and a gate electrode contacting the ONO layer.

Abstract: Methods of forming a VFET SRAM or logic device having a sub-fin level metal routing layer connected to a gate of one transistor pair and to the bottom S/D of another transistor pair and resulting device are provided. Embodiments include pairs of fins formed on a substrate; a bottom S/D layer patterned on the substrate around the fins; conformal liner layers formed over the substrate; a ILD formed over a liner layer; a metal routing layer formed between the pairs of fins on the liner layer between the first pair and on the bottom S/D layer between at least the second pair, an upper surface formed below the active fin portion; a GAA formed on the dielectric spacer around each fin of the first pair; and a bottom S/D contact xc or a dedicated xc formed on the metal routing layer adjacent to the GAA or through the GAA, respectively.

Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.

Abstract: A liquid crystal display according to an exemplary embodiment of the present inventive concept includes: a first insulating substrate; a gate line and a data line, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a second insulating substrate facing the first insulating substrate, wherein one pixel includes the thin film transistor and the pixel electrode and includes a first sub-region and a second sub-region which are separated by the gate line intervened therebetween, the high gradation sub-pixel electrode includes a first high gradation sub-pixel electrode disposed in the first sub-region, and a second high gradation sub-pixel electrode disposed in the second sub-region, and the low gradation sub-pixel electrode includes a first low gradation sub-pixel electrode disposed in the first sub-region, and a second low gradation sub-pixel electrode disposed in the second sub-region.

Abstract: The thickness of an insulating film, which will serve as an offset spacer film and is formed in an offset monitor region, is managed as the thickness of an offset spacer film formed over the side wall surface of a gate electrode of an SOTB transistor STR, etc. When the measured thickness is within the tolerance of a standard thickness, standard implantation energy and a standard dose amount are set. When the measured thickness is smaller than the standard thickness, implantation energy and a dose amount, which are respectively lower than the standard values thereof, are set. When the measured thickness is larger than the standard thickness, implantation energy and a dose amount, which are respectively higher than the standard values thereof, are set.

Abstract: An organic light emitting display apparatus includes a substrate, an organic layer on the substrate, wherein the organic layer includes a first concave portion and a first convex portion on a surface thereof, a first electrode on the organic layer, wherein the first electrode includes a second concave portion and a second convex portion on a surface thereof, a second electrode on the first electrode, and an emission layer between the first and second electrodes. A vertical distance between the second concave portion and the second convex portion is less than that between the first concave portion and the first convex portion.

Abstract: A flexible display and a method of manufacturing the same are disclosed. In one aspect, the method includes forming a sacrificial layer on a support substrate, wherein the sacrificial layer includes a plurality of patterns continuously formed thereon and a plurality of grooves formed between the patterns. The method also includes forming a display unit on the sacrificial layer, dissolving and removing the sacrificial layer with water and separating the display unit from the support substrate.

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.