Abstract: A display device includes a base substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, first to third thin film transistors on the base substrate and including first to third active patterns, respectively, first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively and in the first to third sub-pixel areas, respectively, a blue light emitting layer on the first to third pixel electrodes and configured to emit a blue light, a first color conversion pattern in the first sub-pixel area on the blue light emitting layer, a second color conversion pattern in the second sub-pixel area on the blue light emitting layer, and a red color filter layer between the blue light emitting layer and the first to third active patterns.

Abstract: Disclosed is a color conversion panel which may include a first pixel area, a second pixel area, a third pixel area, and a non-pixel area positioned between the first pixel area, the second pixel area, and the third pixel area; a substrate; a light blocking layer in a non-pixel area on a substrate, a color filter layer including a first color filter, a second color filter, and a third color filter; a color conversion layer including a first color conversion pattern on the first color filter, a second color conversion pattern on the second color filter, and a light transmission pattern on third color filter; a transmission bank between the first color conversion pattern, the second color conversion pattern, and the light transmission pattern; an opening in the transmission bank; and a reflection bank in the opening of the transmission bank.

Abstract: Some embodiments include an integrated assembly having a first memory region, a second memory region offset from the first memory region, and an intermediate region between the first and second memory regions. Channel-material-pillars are arranged within the memory regions. Conductive posts are arranged within the intermediate region. A panel extends across the memory regions and the intermediate region. The panel is laterally between a first memory-block-region and a second memory-block-region. Doped-semiconductor-material is within the memory regions and the intermediate region, and is directly adjacent to the panel. The doped-semiconductor-material is at least part of conductive source structures within the memory regions. Insulative rings laterally surround lower regions of the conductive posts and are between the conductive posts and the doped-semiconductor-material. Insulative liners are along upper regions of the conductive posts. Some embodiments include methods of forming integrated assemblies.

Abstract: Provided are a display panel and a display device. The display panel includes a substrate, a display function layer, a first function layer, a scattering structure and a light shielding structure. The display function layer is located on a side of the substrate. The first function layer is located on a side of the display function layer facing away from the substrate. The scattering structure is located between the display function layer and the first function layer in a direction perpendicular to a plane where the substrate is located. The scattering structure is located in the non-light emitting region. The light shielding structure is located in the non-light emitting region. The light shielding structure at least overlaps the scattering structure in the direction perpendicular to the plane where the substrate is located.

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

Abstract: Some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. Channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. A source structure is coupled to lower regions of the channel-material-pillars. A panel extends across the memory region and the other region. Doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. The doped-semiconductor-material is at least part of the source structure within the memory region. Liners are directly adjacent to the conductive posts and laterally surround the conductive posts. The liners are between the conductive posts and the doped-semiconductor-material. Some embodiments include methods of forming integrated assemblies.

Abstract: A semiconductor device includes a semiconductor chip, a circuit board, a heat releasing plate, an adhesive member, and a conductive member. The circuit board transmits a signal of the semiconductor chip. The heat releasing plate has the semiconductor chip disposed thereon, and has an opening in a region on the outer side of a semiconductor chip placement region that is a region in which the semiconductor chip is disposed. The adhesive member is disposed in a region on the outer side of the opening on a different surface of the heat releasing plate from the surface on which the semiconductor chip is disposed, and bonds the circuit board and the heat releasing plate to each other. The conductive member connects the semiconductor chip and the circuit board to each other via the opening.

Abstract: A semiconductor structure may include a first nanosheet field-effect transistor formed on a first portion of a substrate, a second nanosheet field-effect transistor formed on a second portion of the substrate, and one or more metal contacts. The first field-effect transistor formed on the first portion of a substrate may include a first source drain epitaxy. A top surface of the first source drain epitaxy may be above a top surface of a top-most nanosheet channel layer. The second nanosheet field-effect transistor formed on the second portion of the substrate may include a second source drain epitaxy and a third source drain epitaxy. The second source drain epitaxy may be below the third source drain epitaxy. The third source drain epitaxy may be u-shaped and may be connected to at least one nanosheet channel layer.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.

Abstract: A display device includes: a fold portion; and connection wires electrically connecting a terminal to a wire in a display region. In the fold portion, an inorganic-insulating-film first slit provided to an inorganic insulating film and a film-layer first slit provided to a film layer extend in a direction to intersect with an edge of a frame region. The display device includes: either an inorganic-insulating-film second slit intersecting with the inorganic-insulating-film first slit; or a film-layer second slit intersecting with the film-layer first slit. Either the inorganic-insulating-film second slit or the film-layer second slit is provided between pluralities of the connection wires adjacent to each other.

Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Abstract: A display panel and a display device are provided. The display panel includes a light-emitting device layer located at a side of the substrate; and a color resist layer located at a side of the light-emitting device layer facing away from the substrate and including color resist units arranged in an array, each color resist unit including a first portion and a second portion; a projection of the second portion on the substrate is located at a projection of the first portion on the substrate, a projection of the first portion on the light-emitting device layer is located in a pixel aperture, and a thickness of the first portion of at least one of the color resist units in the first direction is larger than or equal to a thickness of the second portion in the first direction.

Abstract: Provided are an array substrate and a display device. The array substrate includes: a base substrate including a display area and a peripheral area including a first peripheral area; plurality of sub-pixels and data lines; a plurality of control signal lines, data signal input lines and a multiplexing circuit. At least one multiplexing unit includes a plurality of switching transistors, at least one of which including: a first active layer, a first gate including a first gate portion and a second gate portion spaced apart and electrically connected to a control signal line; two first electrodes electrically connected to the first active layer and a data signal input line; and a second electrode electrically connected to the first active layer and one of at least two data lines, an orthographic projection of the second electrode on the base substrate being located between that of the two first electrodes.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: Techniques for temperature control for multiple dies in an element. A temperature of a first die is measured, in an element comprising the first die and a second die. The second die includes at least a portion of a controller. The temperature of the first die is changed by adjusting activity, from the second die to the first die, based on a target temperature for the first die and the measured temperature for the first die.

Abstract: A device includes a semiconductive fin having source and drain regions and a channel region between the source and drain regions, a gate feature over the channel region of the semiconductive fin, a first spacer around the gate feature, source and drain features respectively in the source and drain regions of the semiconductive fin, an interlayer dielectric layer around the first spacer, and a void between the first spacer and the interlayer dielectric layer and spaced apart from the gate feature and the source and drain features.

Abstract: Provided is a display device. The display device includes a first base portion, a second base portion facing the first base portion, a light emitting layer disposed on one surface of the first base portion and emitting first light, a first wavelength conversion pattern disposed on the light emitting layer and converting the first light into second light having a different wavelength from the first light, a first color filter overlapping the first wavelength conversion pattern on one surface of the second base portion and spaced apart from the first wavelength conversion pattern, and an air layer interposed between the first wavelength conversion pattern and the first color filter.

Abstract: Disclosed is a display panel. The display panel includes a semiconductor structure; the semiconductor structure includes a substrate and a partition structure, disposed on the substrate and arranged to partition a film layer disposed on the substrate; the partition structure includes at least a base film layer and a partition film layer that are stacked in sequence; the partition film layer covers the base film layer, and at least one side of the partition film layer extends beyond a corresponding side of the base film layer; and the partition film layer warpage has a warpage structure located at an end portion thereof.

Abstract: A solid-state imaging device including: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions; an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate; and a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.