Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

Abstract: The invention relates to a coating method for depositing a layer system formed from hard material layers on a substrate, by depositing at least one contact layer including the evaporation material on the surface of the substrate only by means of a cathodic vacuum arc evaporation source. After the depositing of the contact layer, at least one intermediate layer is deposited in the form of a nano-layer intermediate layer in a hybrid phase or as a nanocomposite layer, including the evaporation material and the discharge material, by parallel operation of a cathodic vacuum arc evaporation source and of a magnetron discharge source.

Abstract: A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

Abstract: The invention relates to a method and apparatus for the generation of multilayered coatings onto substrates. Typically the apparatus used is a closed field unbalanced magnetron configuration in conjunction with one or more cylindrical and rotatable shields and a substrate carrier on which the substrates to be coated are carried. The shields and substrate holder are provided for rotation about a common axis of rotation. The shields are provided with apertures to allow the selective positioning of the apertures to define a passage or passages along which material from the targets can pass onto the substrates. The targets can be cleaned prior to the coating stage by operation of the targets with the shields selectively positioned to prevent the deposited material from reaching the substrates.

Abstract: A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.

Abstract: A coated article has: a metallic substrate (22); a bondcoat (30); and a thermal barrier coating (TBC) (28). The bondcoat has a first layer (32) and a second layer (34), the first layer having a lower Cr content than the second layer.

Abstract: In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an elongated exterior skirt (102) and a generally circular insert (103) positioned within the skirt, the surfaces of the skirt and insert being relatively coplanar and forming the surface of the target, with the elongated dimension of the skirt being axially oriented toward the ion source. The insert is rotated within the skirt to one of several positions during use of the target by the sputter deposition tool, to distribute wear of the target around the rotating insert and thus increase the utilization and useful life of the overall target assembly.

Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract: A high production rate plasma sputtering process for producing particles having a size of 10 ?m or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on the surface of grains is high.

Abstract: A method for manufacturing a magnetic recording medium including at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate. The perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer. The orientation control layer, formed of a Co—Cr alloy, is formed by the reactive sputtering using a mixture of a sputtering gas and nitrogen.

Abstract: An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Abstract: A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O2, greatly increases the etch rate. In one example, polyimide material etched using a Xe+ plasma FIB with a beam energy from 8 keV to 14 keV and O2 as an etch-assisting gas, the increase in etch rate can approach 30× as compared to the default mill rate.

Abstract: Optical articles of zinc sulfide and zinc selenide with thick coatings of alumina are disclosed. The alumina coatings are deposited on the zinc sulfide and zinc selenide by a microwave assisted magnetron sputtering. In addition to alumina coatings, the optical articles may also include various polymer coatings.

Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.

Abstract: The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.

Abstract: A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.

Abstract: A racetrack-shaped magnetic-field-generating apparatus for magnetron sputtering having a linear portion and corner portions, which comprises a center magnetic pole member; a peripheral magnetic pole member surrounding the center magnetic pole member; pluralities of permanent magnets arranged between the center magnetic pole member and the peripheral magnetic pole member to have magnetic poles aligned in one direction; and a non-magnetic base member supporting them; permanent magnets arranged in at least the linear portion being inclined with their surfaces on the side of the center magnetic pole member lower, and with their outside magnetic pole surfaces not in contact with the peripheral magnetic pole member in lower portions; the distance between the center magnetic pole member and the target being the same as the distance between the peripheral magnetic pole member and the target, thereby generating a uniform magnetic field on a target surface.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion.

Abstract: An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.

Abstract: The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid (12), wherein the container is disposed in a vacuum chamber. When the ionic liquid (12) is accommodated in the container, at least a portion of the transmission mechanism is provided at a position submerged in the ionic liquid (12).