Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: Alternative sputter target compositions or configurations for thin-film electrolytes are proposed whereby the sputter target materials system possesses sufficient electrical conductivity to allow the use of (pulsed) DC target power for sputter deposition. The electrolyte film materials adopt their required electrically insulating and lithium-ion conductive properties after reactive sputter deposition from the electrically conducting sputter target materials system.

Abstract: In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

Abstract: An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: The invention relates to a vacuum arc source (1), including ring-like magnetic field source (2) and a cathode body (3) with an vaporization material (31) as a cathode (32) for the production of an arc discharge on an vaporization surface (33) of the cathode (32). In this arrangement the cathode body (3) is bounded in an axial direction in a first axial direction by a cathode base (34) and in a second axial direction by the vaporization surface (33) and the ring-like magnetic (2) is arranged polarised parallel or anti-parallel and concentric to a surface normal (300) of the vaporization surface (33). In accordance with the invention a magnetic field enhancement ring (4) is arranged on a side remote from the vaporization surface (33) at a pre-determinable second spacing (A2) in front of the cathode base (34). The invention further relates to an arc vaporization chamber (10) with an arc vaporization source (1).

Abstract: [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

Abstract: In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Abstract: The invention provides a substrate bearing a low-emissivity coating. The low-emissivity coating comprises at least one graded film region. In certain embodiments, at least one graded film region is provided between the two infrared-reflective layers of a double-type low-emissivity coating. The graded film region has a substantially continuously decreasing concentration of a first dielectric material and a substantially continuously increasing concentration of a second dielectric material. Also provided are methods of depositing such low-emissivity coatings and substrates bearing these coatings.

Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

Abstract: A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.

Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first plate having a first central axis, the first plate rotatable about the first central axis, a first open loop magnetic pole coupled to the first plate, a second plate having a second central axis, the second plate rotatable about the second central axis, and a second open loop magnetic pole coupled to the second plate, wherein the first open loop magnetic pole and the second open loop magnetic pole form a closed loop magnetic pole when the first and second open loop magnetic poles are aligned.

Abstract: In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.

Abstract: A cathode sputtering source comprises a heat sink comprising a substantially circularly-shaped planar disk formed of an electrically and thermally conductive material, with a circumferentially extending edge connecting first and second opposing major surfaces, the first major surface including a plurality of radially extending, recessed gas supply channels formed therein and extending from a central recess formed in the first major surface to the circumferentially extending edge; the second major surface including a gas inlet formed adjacent the circumferentially extending edge; a gas flow channel formed in the interior of the disk fluidly connects the gas inlet and central recess; and a substantially circular disk-shaped sputtering target is mounted on the first major surface, whereby gas supplied to the gas inlet is substantially uniformly distributed around the entirety of the circumferentially extending edge of the heat sink.

Abstract: A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

Abstract: A sputtering apparatus for depositing a material on a substrate through a sputtering process includes a vacuum chamber, a target positioned in the vacuum chamber and capable of sputtering a material to be deposited, a first plate attached for a substrate to be coupled thereto or decoupled therefrom and installed to be rotated in the vacuum chamber for the substrate to face the target, and a second plate installed to be rotated in the vacuum chamber to face the target.