Abstract: Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area.

Abstract: The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

Abstract: Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.

Abstract: First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

Abstract: A non-adhesive sputtering structure includes a sputtering target having a plate shape; and a backing plate having a plate shape. The backing plate faces the sputtering target, and facing surfaces of the sputtering target and the backing plate are in contact with each other. The backing plate includes a body having a longitudinal axis; and a cooling member through which a cooling material flows in a longitudinal direction of the body substantially parallel to the longitudinal axis. The cooling material conducts heat generated from the sputtering target from sputtering to outside the backing plate. The non-adhesive sputtering structure further includes a plurality of non-adhesive fastening members which maintain the facing surfaces of the backing plate and the sputtering target in contact with each other. The non-adhesive fastening members are extended through a thickness of the backing plate and correspond to regions of the backing plate excluding the cooling member.

Abstract: A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.

Abstract: A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, and a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, and a heater to heat the substrate supported on the chuck. The chuck includes a body and a graphite heat diffuser supported on the body and configured to contact the substrate.

Abstract: A method of sputtering a component includes positioning a conductive substrate into a vacuum chamber, wherein the conductive substrate is tubular and has a surface. A source electrode including a source material may be inserted into the conductive substrate. A first bias voltage ?Vac1 may be applied between the conductive substrate and the vacuum chamber and a second bias voltage ?Vas1 may be applied between the source electrode and the vacuum chamber, sputtering the source material onto the conductive substrate.

Abstract: A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)?0.3, and where the content is measured in atomic percent.

Abstract: A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide.

Abstract: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source.

Abstract: A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Abstract: Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

Abstract: A system for use in coating an interior surface of an object, the system including a vacuum chamber enclosure defining an interior cavity configured to receive the object, a first electrode positioned within the interior cavity of the vacuum chamber enclosure, and a second electrode positioned within the interior cavity such that a space between the first and second electrodes is at least partially defined by the interior surface of the object. The first electrode is fabricated from a first material and the second electrode is fabricated from a second material. The system includes an arc supply coupled to the first and second electrodes. The arc supply selectively vaporizes material from one of the first electrode and the second electrode when current is supplied from one of the first and second electrodes such that the vaporized material forms a layer of material on the interior surface of the object.

Abstract: Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.

Abstract: A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.

Abstract: Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: The invention relates to a tube target (50) for sputtering, with a target (46) disposed on a cylindrical carrier tube. This target (46) is divided into several segments. The target (46) includes at least one groove (51-54) extending obliquely with respect to its rotational axis.

Abstract: A method for forming a polished facet between an edge and a face of a sample, involves removing a first portion of the sample by directing an ion beam onto the edge adjacent the first portion along an ion beam axis to leave the polished facet. The ion beam axis lies on an ion beam plane oriented at a glancing incident angle, preferably from 1° to 30°, to a sample plane defined by and parallel to the first face. The ion beam is directed to flow from the edge towards the first face. Also disclosed is a sample preparation apparatus comprising a chamber adapted for evacuation with a sample holder adapted to hold a sample comprising a first face bounded by an edge, and an ion gun arranged to direct an ion beam along an ion beam axis towards the sample.