Patents Examined by John H. Newsome
  • Patent number: 4714628
    Abstract: Process and apparatus for treating a material by thermoionic effect with a view to modifying its physicochemical properties.The apparatus comprises a substrate having first and second opposite faces, the first face being covered with a dopant film and being positionable facing the material, while maintaining a space between the film and the material; a source producing a collimated, pulsed laser beam having a given wavelength, directed onto the second face of the substrate which is transparent to said wavelength, said laser beam being able to interact with the dopant film for forming dopant ions by explosive vaporization of the dopant; and electrical means for producing simultaneously with the laser pulse an electric field in said space for accelerating the dopant ions with a view to their thermoionic implantation in the material.Application to the treatment of metals and alloys.
    Type: Grant
    Filed: February 12, 1987
    Date of Patent: December 22, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Jean-Francois Eloy
  • Patent number: 4713258
    Abstract: A method of forming an ultrafine pattern, said method comprising selectively forming adsorption sites on a substrate surface by irradiation with a focused electron beam in a vacuum and then depositing a pattern-forming substance onto the substrate by vacuum vapor deposition, chemical vapor deposition, sputtering or other suitable deposition methods, thereby forming the aimed ultrafine patterns. The method can provide ultrafine patterns in a very high resolution or precision by means of an electron beam irradiation and deposition technique under carefully controlled process conditions and, particularly, the electron beam irradiation in the presence of oil gas results in a better quality of pattern.
    Type: Grant
    Filed: July 3, 1985
    Date of Patent: December 15, 1987
    Assignee: Research Development Corporation of Japan
    Inventor: Shizuo Umemura
  • Patent number: 4711790
    Abstract: In an optical system (19) of an optical CVD device, a variable optical attenuator (25) for a pulsed optical beam is controlled in two steps by a control unit (28) to make the optical beam have an optical intensity at a predetermined area of a substrate (11) in a first intensity range and then in a second intensity range which is an intensity range ordinarily used in depositing a CVD film on the predetermined area. The first intensity range should be very high to clean the substrate at the predetermined area without damages to the substrate. When the CVD film should be deposited to a thickness of one micron or thicker, the optical intensity is preferably varied to a third intensity range after the CVD film grows so that a peak temperature of the CVD film falls as a result of an increase in the heat capacity of the CVD film being grown. The third intensity range should be higher than the second intensity range and lower than an intensity at which the CVD film evaporates while being grown.
    Type: Grant
    Filed: July 16, 1986
    Date of Patent: December 8, 1987
    Assignee: NEC Corporation
    Inventor: Yukio Morishige
  • Patent number: 4709656
    Abstract: There is disclosed layer forming apparatus for forming a deposition layer on a substrate by means of electric discharge, comprising a supporting electrode, and a cassette of a structure capable of accommodating therein a substrate for layer formation and being inserted into said supporting electrode and electrically connected therewith to cause electric discharge in said cassette.
    Type: Grant
    Filed: November 14, 1985
    Date of Patent: December 1, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yasutomo Fujiyama
  • Patent number: 4710397
    Abstract: A method for the manufacture of a semiconductor photoelectric conversion device in which a plurality n of semiconductor elements U.sub.1 to U.sub.n are sequentially formed side by side on a substrate and connected in series one after another. The element U.sub.i (i=1, 1, substrate, a non-single-crystal semiconductor laminate member Q.sub.i on the electrode E.sub.i and a second electrode F.sub.i on the laminate member Q.sub.i. The electrode F.sub.j+1 of the element U.sub.j+1 (j=1, 2, . . . (n-1)) is connected via coupling portion K.sub.j to the first electrode E.sub.j. After the formation of a first conductive layer on the substrate, the electrode E.sub.1 to E.sub.n are provided by forming grooves G.sub.1 to G.sub.n-1 in the first conductive layer through use of a first laser beam. A non-single-crystal semiconductor laminate layer is formed to cover the electrodes E.sub.1 to E.sub.n and the grooves G.sub.1 to G.sub.n-1, after which grooves O.sub.1 to O.sub.
    Type: Grant
    Filed: June 13, 1984
    Date of Patent: December 1, 1987
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 4705699
    Abstract: Polymeric compositions are provided in which perfluoropolyethers have been solubilized in non-fluorinated solvents by combining them with a solubilizing agent such as azotic conjugated compounds, and phosphorylated compounds. Typical of the perfluoropolyethers is ##STR1## Typical of the solubilizing agent is phosphorylated methacryloyloxyhydroxypropylisophthalate. The perfluoropolyether and the solubilizing agent are mixed to form a paste which is soluble in organic solvents such as methylethylketone. These compositions find utility as protective lubricant coatings for thin film magnetic recording media. They have the advantage that only one coating step is required in order to apply both the phosphorylated compound and the lubricating polyether. Recording media lubricated with these compositions have demonstrated excellent wear characteristics.
    Type: Grant
    Filed: February 20, 1987
    Date of Patent: November 10, 1987
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Mario D. Burguette, George D. Foss
  • Patent number: 4705698
    Abstract: In a method of isolating segments of contacts on a substrate by laser scribing, a laser is directed on portions to be removed through the substrate.
    Type: Grant
    Filed: October 27, 1986
    Date of Patent: November 10, 1987
    Assignee: Chronar Corporation
    Inventor: John Van Dine
  • Patent number: 4704301
    Abstract: The invention relates to a method of making low resistance contacts between first and second metallization levels in integrated semiconductor circuits. In accordance with the invention, the semiconductor substrates to be cleaned are arranged on a substrate holder in a vacuum chamber. There, a gas plasma is generated by means of a getter electrode made of a material which has a high affinity for oxygen or oxygen containing compounds. This improves the vacuum by reducing the steam partial pressure. The actual cleaning of the exposed surfaces of the semiconductor substrate is effected subsequently by means of cathode sputtering through applying a radio frequency voltage to the substrate holder.
    Type: Grant
    Filed: January 16, 1986
    Date of Patent: November 3, 1987
    Assignee: International Business Machines Corporation
    Inventors: Hans J. Bauer, Marianne B. Froehlich
  • Patent number: 4704303
    Abstract: A combination of a human nail and an artificial nail cover are coated by (1) first applying to the surface of the combination a monomeric aliphatic or cycloaliphatic hydrocarbon urethane dimethacrylate, a photo cure system and methacrylic acid and then curing in the visible light range and then applying a composition of the monomeric urethane or methacrylate, a polymeric aliphatic of cycloaliphatic hydrocarbon urethane acrylate methacrylate, a low viscosity polyglycol dimethacrylate and a photo cure system and curing in the visible range.
    Type: Grant
    Filed: August 20, 1986
    Date of Patent: November 3, 1987
    Inventor: John A. Cornell
  • Patent number: 4704304
    Abstract: Disclosed is a method for repairing opens in thin film conductor lines on a substrate, preferably a multi-layered ceramic substrate. An unpatterned repair metal film is placed over a general area of open defects in conductive lines on a substrate. Preferably, this metal is placed over the conductive lines and opens therein by decal transfer. The assembly is then heated to cause diffusion bonding between the repair metal and conductive lines, but not between the repair metal and substrate. After diffusion bonding, the structure has metal bridges formed across any open defects covered by the repair film and also between adjacent conductive lines. The area of repair is then subjected to ultrasonic energy in a liquid ambient for a time at least long enough to remove metal bridges between adjacent conductive lines, but less than that required to remove repair metal bridges over the opens in the conductive lines.
    Type: Grant
    Filed: October 27, 1986
    Date of Patent: November 3, 1987
    Assignee: International Business Machines Corporation
    Inventors: Albert Amendola, deceased, Ananda H. Kumar, Thomas R. Vance
  • Patent number: 4704299
    Abstract: A process for curing and densifying a sol-gel derived inorganic thin film at lower temperatures (between 10.degree. C. and 400.degree. C.) by applying the films to a substrate, drying the film at a low temperature, exposing the film to a low pressure plasma. The film may be an oxide (e.g. SiO.sub.2), nitride (e.g. Si.sub.3 N.sub.4), oxynitride (e.g. SiO.sub.x N.sub.y) or sulfide (e.g. GeS.sub.2).
    Type: Grant
    Filed: November 6, 1985
    Date of Patent: November 3, 1987
    Assignee: Battelle Memorial Institute
    Inventors: Roy F. Wielonski, Peter J. Melling
  • Patent number: 4702936
    Abstract: A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation.
    Type: Grant
    Filed: September 20, 1985
    Date of Patent: October 27, 1987
    Assignee: Applied Materials Japan, Inc.
    Inventors: Kazuo Maeda, Noboru Tokumasu, Toshihiko Fukuyama
  • Patent number: 4702934
    Abstract: A process and an apparatus for preparing an electrophotographic photosensitive member with the use of an active species and a precursor in the absence of a plasma.
    Type: Grant
    Filed: March 24, 1986
    Date of Patent: October 27, 1987
    Assignee: Canon kabushiki Kaisha
    Inventors: Shunichi Ishihara, Keishi Saito, Shunri Oda, Isamu Shimizu
  • Patent number: 4701345
    Abstract: An improved process for coating an inert substrate, such as braided glass fiber sleeving and inert substrates of other materials and shapes, wiht a polymeric material such as a polyacrylate, a polyvinyl chloride, a silicone rubber, or a polyfluorocarbon, said method comprising the steps of: formulating an emulsion of the polymerizable material in water or other suitable polar phase; thickening the emulsion through the addition of an inert, finely-divided, particulate, hydrophilic inorganic oxide substance to a viscosity in the range of from about 35,000 to about 500,000 centipoises; applying the thicknened emulsion in the form of a uniform coating of desired thickness to the sleeving or other inert substrate; passing the coated substrate through a microwave energy chamber and subjecting the thickened emulsion coating to microwave energy of a frequency, at a power density, and for a peirod of time sufficient to substantially devolatilize, or dry and coalesce, said emulsion; and subjecting the devolatilized coa
    Type: Grant
    Filed: March 11, 1986
    Date of Patent: October 20, 1987
    Assignee: Markel Corporation
    Inventors: James L. Giatras, Warren G. Mang, Charles P. Marino, Michael C. Needling, George F. Pezdirtz
  • Patent number: 4701347
    Abstract: Patterned metal growth is obtained on a substrate by illuminating the substrate in the presence of a metal containing molecule adsorbed on the substrate. After initial illumination, the photoreacted molecules catalyze further metal growth without further illumination.
    Type: Grant
    Filed: April 18, 1986
    Date of Patent: October 20, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventor: Gregg S. Higashi
  • Patent number: 4701343
    Abstract: An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
    Type: Grant
    Filed: August 13, 1986
    Date of Patent: October 20, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4701342
    Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.
    Type: Grant
    Filed: March 6, 1986
    Date of Patent: October 20, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Anthony E. Novembre, Elsa Reichmanis
  • Patent number: 4701379
    Abstract: A method is disclosed for coating a substrate with a uniformly smooth layer of a boron hydride polymer. The method comprises providing a reaction chamber which contains the substrate and the boron hydride plasma. A boron hydride feed stock is introduced into the chamber simultaneously with the generation of a plasma discharge within the chamber. A boron hydride plasma of ions, electrons and free radicals which is generated by the plasma discharge interacts to form a uniformly smooth boron hydride polymer which is deposited on the substrate.
    Type: Grant
    Filed: August 27, 1986
    Date of Patent: October 20, 1987
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Richard K. Pearson, Roman I. Bystroff, Dale E. Miller
  • Patent number: 4698236
    Abstract: Accurately altering a precisely located site on a substrate by: (a) providing a vacuum chamber; (b) providing an energy beam; (c) providing a source of a hydrocarbon and a conduit extending between the source and the chamber, the hydrocarbon being capable of being adsorbed in the substrate and of interacting with the energy beam to alter the substrate; (d) positioning the substrate in the chamber to be exposed to hydrocarbon delivered by the conduit; (e) introducing into the conduit a carrier having a vapor pressure above the vapor pressure of the hydrocarbon, the carrier being in vapor form under conditions existing in the conduit and having a bulk velocity that transports the hydrocarbon by molecular collisions into the chamber, the hydrocarbon being adsorbed on the surface of the substrate, free carrier molecules being drawn off sufficiently rapidly to maintain low pressure in the chamber; and (e) while maintaining the low chamber pressure, directing the energy beam to the site in the presence of the absor
    Type: Grant
    Filed: January 2, 1986
    Date of Patent: October 6, 1987
    Assignee: Ion Beam Systems, Inc.
    Inventors: Edwin M. Kellogg, John M. Dobbs, Gregory J. Dunn, Henry C. Kaufmann, William Thompson
  • Patent number: 4694777
    Abstract: A beam of substantially coherent light passes through a window in an enclosure in a direction substantially parallel, but contiguous, to a substrate in the enclosure to produce a deposition of a substance on the substrate. The beam may have a width corresponding substantially to the width of the substrate or it may be relatively narrow and swept across the substrate. The beam is relatively narrow in a direction substantially perpendicular to the substrate. Differences in the beam strength at individual positions along the substrate may be compensated by reflecting the beam, after passing the substrate, to travel in a reverse direction along the substrate or by directing the beam slightly downwardly along the substrate during movement along the substrate. A second substrate may be substantially parallel to, but slightly spaced from, the first substrate, so that the light beam passes between the substrates to obtain a deposition of the substance on both substrates.
    Type: Grant
    Filed: July 3, 1985
    Date of Patent: September 22, 1987
    Inventor: Gregory A. Roche