Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 500° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010 ?·cm or less.

Abstract: A laminated film includes a flexible base material, a first thin film layer formed on at least one of surfaces of the base material, and a second thin film layer formed on the first thin film layer, and the first thin film layer contains a silicon atom (Si), an oxygen atom (O) and a carbon atom (C), the second thin film layer contains a silicon atom, an oxygen atom and a nitrogen atom (N), and the first thin film layer and the second thin film layer are formed by using glow discharge plasma.

Abstract: The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

Abstract: Provided is a coating system for a substrate, the system including a first, second and third layer. In the system, the first layer is designed as an adhesion promoter layer, the second layer is a ductile metal layer with a columnar structure and the uppermost, third layer is a ceramic oxide layer with a high hardness value. The substrate is ideally an element of a compressor component of a stationary gas turbine. Also disclosed is a method for producing the coating system.

Abstract: In an X-ray topography image for a crystal growth main surface of a single-crystal diamond, a group of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists. Further, in the single-crystal diamond, a plurality of crystal defect line-like gathered regions exist in parallel. In the plurality of crystal defect line-like gathered regions, groups of crystal defect points are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.

Abstract: A grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet, wherein a total area percentage of defective parts scattered on the forsterite film is less than 1.5% relative to a surface area of the forsterite film when viewed from above the surface, and methods for evaluating a grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet.

Abstract: A ceramic bonded body of the disclosure includes a first silicon carbide ceramics, a second silicon carbide ceramics, and a bonding layer positioned between the first silicon carbide ceramics and the second silicon carbide ceramics. The bonding layer contains 25 mass % or more metallic silicon, and 25 mass % or more silicon carbide assuming all components constituting the bonding layer as 100 mass %, and a total of the metallic silicon and the silicon carbide is 75 mass % or more, and the bonding layer further contains at least one of nickel silicide and chromium silicide.

Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Abstract: A pre-coating agent composition for a grain-oriented electrical steel sheet, a grain-oriented electrical steel sheet including the same, and a manufacturing method thereof are provided. Particularly, a pre-coating agent composition for a grain-oriented electrical steel sheet including an acid containing boron (B); and a solvent, a grain-oriented electrical steel sheet including the same, and a manufacturing method thereof are provided.

Abstract: To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 660° C., which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 2×1012 ?·cm or less.

Abstract: A coated steel component is provided. The coated steel component includes a substrate composed of a steel sheet which can be supplied to a hot-forming process. The coated steel component also possesses a non-metallic coating on the basis of silicon, in a layered structure. The layered structure includes three functional layers having the composition SiOxNyCz, wherein x lies between 30 and 70%, y lies between 0 and 35%, and z lies between 0 and 50%.

Abstract: A coating consists essentially of one or more selected from the group of nitrides of one or more first metals of titanium, zirconium and hafnium beyond 0 at % but less than 100 at % and a balance of silicon, and nitrides of one or more second metals of vanadium, niobium and tantalum.

Abstract: A part include a refractory alloy including a niobium matrix having metal silicide inclusions present therein, the surface of the part being coated by a protective coating, the protective coating including a phase having the following stoichiometry: (NbxTi1-x)3M?Cr?Si?X? where M designates Fe, Co, or Ni, X designates one or more other elements that might be present, x lies in the range 0 to 1, x lies in the range 5 to 8.5, and the sum ?+? lies in the range 3 to 7; or Nb4M??Si?X??? where M? designates Fe, Co, or Ni, X? designates one or more other elements that might be present, ? lies in the range 3.2 to 4.8, and ? lies in the range 6 to 8.

Abstract: Advanced environmental barrier coating bond coat systems with higher temperature capabilities and environmental resistance are disclosed. These bond coat systems can be applied to ceramic substrates such as SiC/SiC ceramic matrix composite substrates, and can provide protection from extreme temperature, mechanical loading and environmental conditions, such as in high temperature gas turbines. Example bond coat systems can include either an advanced silicon/silicide component, an oxide/silicate component, or a combination thereof.

Abstract: An article having a substrate that includes a ceramic or a ceramic matrix composite, a bond layer on the substrate that includes silicon metal and a boria stabilizing agent, and at least one additional layer on the bond layer.

Abstract: A ferritic stainless steel material excellent in vibration damping capability has a composition containing, by mass %, from 0.001 to 0.04% of C, from 0.1 to 2.0% of Si, from 0.1 to 1.0% of Mn, from 0.01 to 0.6% of Ni, from 10.5 to 20.0% of Cr, from 0.5 to 5.0% of Al, from 0.001 to 0.03% of N, from 0 to 0.8% of Nb, from 0 to 0.5% of Ti, from 0 to 0.3% of Cu, from 0 to 0.3% of Mo, from 0 to 0.3% of V, from 0 to 0.3% of Zr, from 0 to 0.6% of Co, from 0 to 0.1% of REM, from 0 to 0.1% of Ca, the balance of Fe and unavoidable impurities, and has ferrite single phase matrix with crystal grains of average crystal grain diameter of from 0.3 to 3.0 mm and a residual magnetic flux density of 45 mT or less.

Abstract: In some examples, a coating may include at least one feature that facilitates visual determination of a thickness of the coating. For example, the coating may include a plurality of microspheres disposed at a predetermined depth of the coating. The plurality of microspheres may define a distinct visual characteristic. By inspecting the coating and viewing at least one of the microspheres, the thickness of the coating may be estimated. In some examples, the plurality of microspheres may be embedded in a matrix material, and the distinct visual characteristic of the microspheres may be different than the visual characteristic of the matrix material. In other examples, the at least one feature may include at least one distinct layer in the coating system that includes a distinct visual characteristic, such as a color of the distinct layer.

Abstract: Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

Abstract: A single crystal membrane of BaxSr(1-x)TiO3 (BST) has been fabricated for the first time using molecular beam epitaxy. The membrane typically has a thickness of 200 nm to 500 nm and the thickness may be controlled to within 1%. It may be fabricated on a sapphire wafer carrier from which it may subsequently be detached. The smoothness of the membrane has an RMS of less than 1 nm. This membrane is very promising for the next generation of RF filters.

Abstract: Organic solvent based slurry compositions for making an environmental barrier coating including from about 6.8 wt % to about 96.1 wt % solvent; from about 3.9 wt % to about 93.2 wt % primary material; and from about 0.01 wt % to about 20 wt % slurry sintering aid.