Abstract: The disclosure relates generally to recession resistant gas turbine engine articles that comprise a silicon containing substrate, and related coatings and methods. The present disclosure is directed, inter alia, to an engine article comprising a silicon substrate which is coated with a chemically stable porous oxide layer. The present disclosure also relates to articles comprising a substrate and a bond coat on top comprising a two phase layer of interconnected silicon and interconnected oxide, followed by a layer of silicon. The present disclosure further relates to a recession resistant article comprising an oxide in a silicon containing substrate, such that components of the silicon containing substrate is interconnected with oxides dispersed in the substrate and form the bulk of the recession resistant silicon containing article.

Abstract: The present disclosure is directed to a method of fabricating a substrate structure and a substrate structure fabricated by the same method. The method would include forming a first metal layer directly on a base, forming a first protective layer directly on the first metal layer, forming a second protective layer by using a compound comprising a thiol group directly on the first protective layer, patterning the second protective layer to form a pattern having an opening exposing the first protective layer, and forming a second metal layer within the opening of the second protective layer and directly on the first protective layer. The substrate structure would include a base, a first metal layer, a first protective layer, a second protective layer, and a second metal layer.

Abstract: An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum ?? of a peak based on the pole figure of the copper layer is within 5° and the tail width ?? of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that ?? is within 6° and the tail width ?? is within 25°, and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that ?? is within 5° and the tail width ?? is within 15°.

Abstract: Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.

Abstract: A composite substrate comprising a monocrystalline support substrate made of an insulating material and a monocrystalline semiconductor part disposed as a layer on the upper surface of the support substrate. An interface region having a thickness of 5 nm from the bonding interface between the support substrate and the semiconductor part towards the semiconductor part side includes a metal comprising: a metal element excluding the materials constituting the main components of the support substrate and the semiconductor part; and an inert element selected from the group consisting of Ar, Ne, Xe, and Kr. The number of atoms per unit area of the inert element is greater than that of the metal and smaller than that of the element constituting the semiconductor part.

Abstract: Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.

Abstract: The present invention concerns anti-corrosive coating compositions, in particular coating compositions for protecting iron and steel structures. In particular, the present invention relates to coating compositions comprising particulate zinc, conductive pigments, and hollow glass microspheres, e.g. epoxy based coatings. The invention furthermore concerns a kit of parts containing the composition, a method for its application, as well as metal structures coated with the composition.

Abstract: A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

Abstract: A steel sheet for hot press-forming includes a zinc coating layer and a Si-containing compound layer in this order on a base steel sheet, wherein the Si-containing compound layer contains a silicone resin having an organic functional group of a carbon number of 4 or more.

Abstract: Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-? grain boundary from about 60 to about 75 and a percentage of ?3 grain boundary from about 12 to about 25.

Abstract: A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the O proportion per unit thickness is 2%/nm to 8%/nm.

Abstract: A high silica content substrate, such as for a device, is provided. The substrate has a high silica content and is thin. The substrate may include a surface with a topography or profile that facilitates bonding with a conductive metal layer, such as a metal layer for a circuit or antenna. The substrate may be flexible, have high temperature resistance, very low CTE, high strength and/or be non-reactive. The substrate may be suitable for use in circuits intended for use in high temperature environments, low temperature environments, reactive environments, or other harsh environments. The substrate may be suitable for high frequency antenna applications.

Abstract: A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1×1018/cm3 or more and low carrier concentration regions having a carrier concentration of 9×1017/cm3 or less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.

Abstract: In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.

Abstract: Thermal barrier coating made from a thermally sprayable powder that includes yttria stabilized zirconia and hafnia, from 6 to 9 weight percent yttria, and total impurities less than or equal to about 0.1 weight percent. The thermal barrier coating has from about 5 to 250 vertical macro cracks per 25.4 mm length measured along a coating surface and the macro cracks are oriented perpendicular to a surface of a substrate containing said coating.

Abstract: Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of boron icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B12Hw)xSiyOz with 3?w?5, 2?x?4, 2?y?5 and 0?z?3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

Abstract: The present invention relates to an anti-reflective coating composition, to an anti-reflective film using same, and to a method for preparing the anti-reflective film, wherein the anti-reflective coating composition is capable of forming a coating layer that has a low refractive index and adjusting the surface energy. More particularly, the present invention relates to an anti-reflective film of which the reflectance is minimized and the surface energy is adjusted, by forming a coating layer using an anti-reflective coating composition that contains, as a binder, a siloxane compound which is synthesized by reacting organosilane that has a fluroalky group with alkoxysilane at a certain weight ratio, and also relates to a method for preparing the anti-reflective film. The anti-reflective film using the anti-reflective coating composition has excellent anti-reflective performance, and is thus expected to be applicable to various display devices such as a touch film.

Abstract: A hot-dip galvanized steel sheet having a good appearance and good adhesion to a coating, the hot-dip galvanized steel sheet having a composition containing, on a mass basis: C: 0.08% or more and less than 0.20%, Si: 0.1% to 3.0%, Mn: 0.5% to 3.0%, P: 0.001% to 0.10%, Al: 0.01% to 3.00%, and S: 0.200% or less, a remainder being Fe and incidental impurities, wherein the hot-dip galvanized steel sheet includes an internal oxidation layer and a decarburized layer, the internal oxidation layer having a thickness of 5 ?m or less, the decarburized layer having a thickness of 20 ?m or less, and 50% or more by area of the internal oxidation layer is composed of a Si oxide containing Fe and/or Mn represented by Fe2XMn2-2XSiOY, wherein X ranges from 0 to 1, and Y is 3 or 4.

Abstract: A part including a substrate in which at least a portion adjacent to a surface of the substrate is made of a refractory material containing silicon, is protected by an environmental barrier formed on the surface of the substrate and having at least a self-healing layer containing a rare earth silicate. The self-healing layer is formed: for at least 90 mol %, by a system constituted by 30 mol % to at most 80 mol % of at least one rare earth silicate RE2Si2O7, RE being a rare earth, and at least 20 mol % to 70 mol % of manganese oxide MnO; and for at most 10 mol %, by one or more oxides other than MnO, having a eutectic point with SiO2 less than or equal to 1595° C.; the self-healing layer presenting a liquid phase having a self-healing function at least throughout the temperature range 1200° C. to 1400° C., while conserving a majority solid phase.