Abstract: Embodiments are directed to glass-ceramic substrates with a III-V semiconductor layer, for example, a GaN layer that can be used in LED lighting devices. The glass-ceramics material is in the anorthite-rutile (CaAl2Si2O8+TiO2) family or in the cordierite-enstatite (SiO2—Al2O3—MgO—TiO2) family.

Abstract: An alloy having an ?? martensite which is a processing starting structure is hot worked. The alloy is heated at a temperature increase rate of 50 to 800° C./sec, and strain is given at not less than 0.5 by a processing strain rate of from 0.01 to 10/sec in a case of a temperature range of 700 to 800° C., or by a processing strain rate of 0.1 to 10/sec in a case of a temperature range of 800° C. to 1000° C. By generating equiaxial crystals having average crystal particle diameters of less than 1000 nm through the above processes, a titanium alloy having high strength and high fatigue resistant property can be obtained, in which hardness is less than 400 HV, tensile strength is not less than 1200 MPa, and static strength and dynamic strength are superior.

Abstract: A method and apparatus for providing molten metal infiltration into a component is provided.

Abstract: Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment.

Abstract: An article (50; 100) has a metallic substrate (22), a bondcoat (30) atop the substrate, and a thermal barrier coating (28; 27, 28) atop the bondcoat. The thermal barrier coating or a layer thereof comprises didymium oxide ore and zirconia.

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: In some examples, a coating may include at least one feature that facilitates visual determination of a thickness of the coating. For example, the coating may include a plurality of microspheres disposed at a predetermined depth of the coating. The plurality of microspheres may define a distinct visual characteristic. By inspecting the coating and viewing at least one of the microspheres, the thickness of the coating may be estimated. In some examples, the plurality of microspheres may be embedded in a matrix material, and the distinct visual characteristic of the microspheres may be different than the visual characteristic of the matrix material. In other examples, the at least one feature may include at least one distinct layer in the coating system that includes a distinct visual characteristic, such as a color of the distinct layer.

Abstract: An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 5×1017 atoms/cm4 or less.

Abstract: A method for providing a gas barrier film with ample gas barrier properties even in a high temperature, which is maintained when the film is bent. The gas barrier film also has excellent resistance to cracking. A gas barrier film, and a method for manufacturing the same is also disclosed.

Abstract: Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 ?m in film thickness, (2) an Ni layer 1-5 ?m in film thickness, and (3) an Au layer 0.05-4 ?m in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.

Abstract: A composite composition that includes an MCrAlX alloy and a nano-oxide ceramic is disclosed. In the formula, M includes nickel, cobalt, iron, or a combination thereof, and X includes yttrium, hafnium, or a combination thereof, from about 0.001 percent to about 2 percent by weight of the alloy. The amount of the nano-oxide ceramic is greater than about 40 percent, by volume of the composition. A protective covering that includes the composite composition is also disclosed. The protective covering can be attached to a tip portion of a blade with a braze material. A method for joining a protective covering to a tip portion of a blade, and a method for repair of a blade, are also provided.

Abstract: Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

Abstract: The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B.

Abstract: A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm2 at the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10?5-1.5×10?3; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 1013-1019/cm3.

Abstract: A component, especially contrived and designed for being used in a turbomachine, includes a high-temperature coating being arranged above a base of the component. The base has at least one structural element for connecting it to the high-temperature coating, with the cross-section of the at least one structural element having at least three different widths, i.e. a base width at the lower end of the at least one structural element, a center width above it, and a tip width above that, where on average the center width is greater than or equal to the base width, but less than four times the base width, in particular less than or equal to three times the base width.

Abstract: A method of smoothing the surface of a ceramic matrix composite material part that presents a surface that is undulating and rough. The method includes depositing a refractory vitreous coating on the surface of the part, the vitreous coating essentially containing silica, alumina, baryte, and lime.

Abstract: The invention relates to a coating of glass with thermochromic vanadium dioxide. The coloration of the vanadium dioxide is shifted from bronze to neutral (colorless) by a doping with alkaline earth metals, for example Ca, Sr and Br. The thermochromic effect is maintained at the same time.

Abstract: A pseudo-substrate (1, 11) for use in the production of semiconductor components, having a carrier substrate (2, 12) with a crystalline structure and a first buffer (3, 13), which is arranged on a surface of the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, wherein the first buffer (3, 13) is embodied as a single layer or as a multilayer system and includes, at least at the surface facing away from the carrier substrate (2, 12), arsenic (As) and at least one of the elements aluminum (Al) and indium (In).