Abstract: The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B.

Abstract: The present disclosure is directed to a metal-containing apparatus including a substrate member constructed of a metal that is highly resistant to pitting corrosion and wear in aggressive media. An exemplary metal-containing apparatus is a plate heat exchanger. The metal includes an oxidation layer on the surface thereof and a thin metal oxide nanoporous film on top of the oxidation layer. The nanoporous film is highly compliant and is comprised of oxygen and aluminum, titanium, silicon, zirconium and combinations thereof.

Abstract: A planarized fine particle layered body which has fine particles sufficiently bonded together, sufficient density, flat surface and uniform density from a deposition of fine particles formed by supplying the fine particles to a substrate by aerosol deposition method.

Abstract: A ceramic matrix composite component for a power generation system includes a ceramic foam core and a ceramic matrix composite material surrounding at least a portion of the ceramic foam core. The ceramic foam core remains in place during operation of the component in the power generation system. Additionally, a method of forming the ceramic matrix composite component is provided.

Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

Abstract: In order to protect a substrate having at least a portion adjacent to a surface that is made of a refractory material containing silicon, while the substrate is in use at high temperature in a medium that is oxidizing and wet, there is formed on the surface of the substrate an environmental barrier that contains no boron and that has at least one layer that is essentially constituted by a system of oxides formed by at least one rare earth oxide, silica, and alumina, and that is capable of self-healing by maintaining the presence of at least one solid phase in a temperature range extending up to at least 1400° C. approximately.

Abstract: A semiconductor device includes a wafer having a first surface opposite a second surface, and at least one laser irradiated region between the first and second surfaces. The laser irradiated region includes a laser-induced stress that is configured to minimize curvature of at least one of the first and second surfaces.

Abstract: Improved coating blades are disclosed, as well as processes for manufacturing such blades. The inventive blades have an intermediate edge deposit effective to reduce heat transfer from a wear resistant top deposit to the blade substrate. In one embodiment, the intermediate layer is comprised of NiCr, possibly with embedded oxide particles. Suitably, the intermediate layer and the top deposit are applied by an HVOF process. It is also envisaged that the intermediate layer may be deposited by plasma spraying. The intermediate layer may comprise stabilized zirconia.

Abstract: A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.

Abstract: A substrate coating and a method of forming the same are provided. The substrate coating includes a first layer formed on a substrate, in which the composition of the first layer includes at least silicon-rich-carbon, and the amount of silicon is about equal to or greater than the amount of carbon; and a second layer formed on the first layer, in which the composition of the second layer includes at least fluorine doped diamond-like-carbon. The substrate coating not only is easy to clean, has good wearing performance, and provides a smooth surface, but also has better adhesion to prevent peeling off.

Abstract: A method of smoothing the surface of a ceramic matrix composite material part that presents a surface that is undulating and rough. The method includes depositing a refractory vitreous coating on the surface of the part, the vitreous coating essentially containing silica, alumina, baryte, and lime.

Abstract: Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Abstract: A method for producing a silica container having a rotational symmetry is provided. The method includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.

Abstract: A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.

Abstract: The invention relates to a corrosion resistant reactor tube, method for providing a passivating or corrosion resistant coating to the inside of the reactor tube, and a method of making high bismuth glass powders using the corrosion resistant reactor tube.

Abstract: Steel strip provided with a hot dip galvanized zinc alloy coating layer, in which the coating of the steel strip is carried out in a bath of molten zinc alloy, the zinc alloy in the coating consisting of: 0.3-2.3 weight % magnesium; 0.6-2.3 weight % aluminum; optional <0.2 weight % of one or more additional elements; unavoidable impurities; the remainder being zinc in which the zinc alloy coating layer has a thickness of 3-12 ?m.

Abstract: A method for assembling at least two parts made of silicon carbide-based materials by non-reactive brazing is disclosed. The two parts are contacted with a non-reactive brazing composition. The assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition. The parts and the brazing composition are cooled so that, after solidification of the brazing composition, a moderately refractory joint is formed. The non-reactive brazing composition is a binary alloy composed, in mass percentages, of about 46% to 99% silicon and 54% to 1% neodymium.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.

Abstract: Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (?m) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (?m) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: ?40<Z2/Z1<?1: Expression (1).