Abstract: A method of producing a substrate includes: applying a composition on a metal basal plate to form a coating film; and forming a metal-containing layer on at least a part of the coating film. The composition contains a solvent, and a polymer having a first terminal structure and a second terminal structure in a single molecule. Each of the first terminal structure and the second terminal structure is at least one selected from the group consisting of a structure represented by formula (1) and a structure represented by formula (2). A1 and A2 each independently represent a monovalent group having a functional group capable of forming a chemical bond with a metal atom. L2 represents —S—, —NR—, or —NA22-, wherein A22 represents a monovalent group having a functional group capable of forming a chemical bond with a metal atom.

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Abstract: A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere h

Abstract: Compositions for dust suppression, methods for forming the compositions, and methods for using the compositions are provided. In one embodiment, the composition includes a non-sulfonated lignin and an alkylene glycol alkyl ether solvent. The compositions may be applied to an exposed surface of a substrate.

Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

Abstract: Solid-state supercapacitors and microsupercapacitors comprising printed graphene electrodes and related methods of preparation.

Abstract: A simple, one-step method for producing a homogenous CeO2—TiO2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

Abstract: The present invention provides a method of finely depositing lithium metal powder or thin lithium foil onto a substrate while avoiding the use of a solvent. The method includes depositing lithium metal powder or thin lithium foil onto a carrier, contacting the carrier with a substrate having a higher affinity for the lithium metal powder as compared to the affinity of the carrier for the lithium metal powder, subjecting the substrate while in contact with the carrier to conditions sufficient to transfer the lithium metal powder or lithium foil deposited on the carrier to the substrate, and separating the carrier and substrate so as to maintain the lithium metal powder or lithium metal foil, deposited on the substrate.

Abstract: The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber.

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

Abstract: A process for forming a lithium-metal-carbon film on a lithium metal structure. A metal-ligand complex is exposed to the metal ligand, such as for 5-30 seconds in a chemical vapor transfer reactor at a temperature of 100-180° C.

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.

Abstract: A robotic system is provided for repeatedly and reproducibly applying a sealant to a seam in an assembled heating, ventilation and air conditioning (“HVAC”) duct component. The applied sealant has a predetermined location on the assembled HVAC duct component to seal the seam. An assembled HVAC duct component is thus provided having a robot applied sealant on at least one seam in the assembled HVAC duct component, wherein the applied sealant has at least one of a predetermined location, thickness or coverage. The robotically applied sealant can be applied to a blank for forming the assembled HVAC duct component, wherein the sealant is located at locations forming a seam in the assembled HVAC duct component.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: Methods for forming flexible magnetic resonance imaging (MRI) receive coil devices having at least one receive coil with at least one capacitor are provided and include providing a flexible substrate having a first surface and a second surface opposite the first surface, forming a first conductor pattern on the first surface by printing a first layer of conductive material on the first surface using a printing mask having a pattern, and forming a second conductor pattern on the second surface by printing a second layer of conductive material on the second surface using the same printing mask or identical printing mask, wherein a portion of the first conductor pattern on the first surface overlaps with a portion of the second conductor pattern on the second surface with the flexible substrate therebetween to form the at least one capacitor element.

Abstract: Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.

Abstract: Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.

Abstract: A film forming method for forming a film on a pattern and cleaning a space of a processing container configured to perform therein a plasma processing under a reduced pressure environment. The space is provided with a pedestal and an upper electrode configured to supply radio-frequency power. The upper electrode is disposed in the space to face the pedestal.

Abstract: A method is described for protecting a silver surface against tarnishing. This involves depositing a layer of a silver-copper alloy on a substrate, which may be a silver substrate. The alloy comprises between 0.1 wt % and 10 wt % of copper relative to the total weight of the alloy. At least one layer of a metal oxide or a nitride having a thickness in a range of 1 nm to 200 nm is deposited on the alloy to protect against tarnishing. The presence of copper in the silver-copper alloy enhances the alloy's adhesion without altering the silver color.

Abstract: A method for performing gapfill of features of a substrate including a) arranging a substrate on a substrate support in a processing chamber; b) performing atomic layer deposition (ALD) to deposit film in a feature of the substrate; c) supplying an inhibitor plasma gas to the processing chamber and striking plasma in the processing chamber to inhibit deposition in upper portions of the feature as compared to lower portions of the feature; d) repeating b) N times, where N is an integer greater than one, and repeating c) M of the N times where M is an integer greater than zero and less than or equal to N; e) supplying an etch gas to the processing chamber to etch the film in the feature of the substrate; and f) repeating b) to e) one or more times to gapfill the feature of the substrate.